Single Diodes

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
1N5817G/TR DIODE SCHOTTKY 20V 1A DO41 Microchip Technology	5,291	-	RFQ	Datasheet	-	DO-204AL, DO-41, Axial	Tape & Reel (TR)	Active	Schottky	20 V	1A	450 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 20 V	-	-	-	Through Hole	DO-204AL (DO-41)	-65°C ~ 150°C
VS-150EBU04 DIODE GP 400V 150A POWIRTAB Vishay General Semiconductor - Diodes Division	4,769	-	RFQ	Datasheet	-	PowerTab™, PowIRtab™	Bulk	Obsolete	Standard	400 V	150A	1.3 V @ 150 A	Fast Recovery =< 500ns, > 200mA (Io)	93 ns	50 µA @ 400 V	-	-	-	Chassis Mount	PowIRtab™	-55°C ~ 175°C
SCS220AGHRC DIODE SIL CARB 650V 20A TO220AC Rohm Semiconductor	5,973	-	RFQ	Datasheet	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	20A	1.55 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	400 µA @ 600 V	730pF @ 1V, 1MHz	Automotive	AEC-Q101	Through Hole	TO-220AC	175°C (Max)
1N5806E3/TR DIODE GEN PURP 150V 2.5A A AXIAL Microchip Technology	5,558	-	RFQ	Datasheet	-	A, Axial	Tape & Reel (TR)	Active	Standard	150 V	2.5A	975 mV @ 2.5 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	1 µA @ 150 V	25pF @ 10V, 1MHz	-	-	Through Hole	A, Axial	-65°C ~ 175°C
JAN1N5622/TR DIODE GEN PURP 1KV 1A Microchip Technology	7,870	-	RFQ	Datasheet	-	A, Axial	Tape & Reel (TR)	Active	Standard	1000 V	1A	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	500 nA @ 1 V	-	Military	MIL-PRF-19500/427	Through Hole	A, Axial	-65°C ~ 200°C
1N5622US DIODE GEN PURP 1KV 1A D-5A Microchip Technology	4,678	-	RFQ	Datasheet	-	SQ-MELF, A	Bulk	Active	Standard	1000 V	1A	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	500 nA @ 1000 V	-	-	-	Surface Mount	D-5A	-65°C ~ 200°C
1N5550/TR STD RECTIFIER Microchip Technology	5,781	-	RFQ	Datasheet	-	B, Axial	Tape & Reel (TR)	Active	Standard	200 V	3A	1.2 V @ 9 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	1 µA @ 200 V	-	-	-	Through Hole	B, Axial	-65°C ~ 175°C
1N5550E3 DIODE GEN PURP 200V 3A B AXIAL Microchip Technology	4,869	-	RFQ	Datasheet	-	B, Axial	Bulk	Active	Standard	200 V	3A	1.2 V @ 9 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	1 µA @ 200 V	-	-	-	Through Hole	B, Axial	-65°C ~ 175°C
IDW24G65C5BXKSA2 DIODE SIL CARB 650V 12A TO247-3 Infineon Technologies	5,005	-	RFQ	Datasheet	CoolSiC™+	TO-247-3	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	12A	1.7 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	190 µA @ 650 V	360pF @ 1V, 1MHz	-	-	Through Hole	PG-TO247-3	-55°C ~ 175°C
95HQ015 DIODE SCHOTTKY 15V 95A DO203AB Vishay General Semiconductor - Diodes Division	8,419	-	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Obsolete	Schottky	15 V	95A	460 mV @ 95 A	Fast Recovery =< 500ns, > 200mA (Io)	-	20 mA @ 15 V	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-65°C ~ 100°C
DSEP75-06AR DIODE GP 600V 75A ISOPLUS247 IXYS	9,080	-	RFQ	Datasheet	HiPerFRED™	TO-247-3	Tube	Obsolete	Standard	600 V	75A	2.02 V @ 75 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	1 mA @ 600 V	-	-	-	Through Hole	ISOPLUS247™	-55°C ~ 175°C
JAN1N5550/TR DIODE GEN PURP 200V 3A Microchip Technology	2,144	-	RFQ	Datasheet	-	B, Axial	Tape & Reel (TR)	Active	Standard	200 V	3A	1.2 V @ 9 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	1 µA @ 200 V	-	Military	MIL-PRF-19500/420	Through Hole	B, Axial	-65°C ~ 175°C
JAN1N5551/TR DIODE GEN PURP 400V 3A Microchip Technology	5,482	-	RFQ	Datasheet	-	B, Axial	Tape & Reel (TR)	Active	Standard	400 V	3A	1.2 V @ 9 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	1 µA @ 400 V	-	Military	MIL-PRF-19500/420	Through Hole	B, Axial	-65°C ~ 175°C
VS-41HFR60 DIODE GP REV 600V 40A DO203AB Vishay General Semiconductor - Diodes Division	2,976	-	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard, Reverse Polarity	600 V	40A	1.3 V @ 125 A	Standard Recovery >500ns, > 200mA (Io)	-	9 mA @ 600 V	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-65°C ~ 190°C
75HQ045 DIODE SCHOTTKY 45V 75A DO203AB Vishay General Semiconductor - Diodes Division	4,433	-	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Obsolete	Schottky	45 V	75A	710 mV @ 75 A	Fast Recovery =< 500ns, > 200mA (Io)	-	5 mA @ 45 V	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-65°C ~ 175°C
VS-41HF100 DIODE GEN PURP 1KV 40A DO203AB Vishay General Semiconductor - Diodes Division	3,241	-	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard	1000 V	40A	1.3 V @ 125 A	Standard Recovery >500ns, > 200mA (Io)	-	9 mA @ 1000 V	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-65°C ~ 190°C
SIDC26D60C6 DIODE GP 600V 100A WAFER Infineon Technologies	8,904	-	RFQ	Datasheet	-	Die	Bulk	Discontinued at Digi-Key	Standard	600 V	100A	1.9 V @ 100 A	Standard Recovery >500ns, > 200mA (Io)	-	27 µA @ 600 V	-	-	-	Surface Mount	Sawn on foil	-40°C ~ 175°C
CD1A100 DIODE SCHOTTKY 100V 1A DIE Microchip Technology	8,799	-	RFQ	Datasheet	-	Die	Tape & Reel (TR)	Active	Schottky	100 V	1A	750 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 100 V	-	Military	MIL-PRF-19500/586	Surface Mount	Die	-55°C ~ 125°C
1N5712-1E3 DIODE SCHOTTKY 20V 75MA DO35 Microchip Technology	7,283	-	RFQ	Datasheet	-	DO-204AH, DO-35, Axial	Bulk	Active	Schottky	20 V	75mA	1 V @ 35 mA	Small Signal =< 200mA (Io), Any Speed	-	150 nA @ 16 V	2pF @ 0V, 1MHz	-	-	Through Hole	DO-204AH (DO-35)	-65°C ~ 150°C
1N5803E3/TR DIODE GEN PURP REV 80V 1A AXIAL Microchip Technology	8,020	-	RFQ	Datasheet	-	Axial	Tape & Reel (TR)	Active	Standard, Reverse Polarity	80 V	1A	875 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	1 µA @ 75 V	25pF @ 10V, 1MHz	-	-	Through Hole	Axial	-65°C ~ 175°C

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Compare the manufacturer part number, electrical specifications, package, operating conditions and application requirements. The product datasheet should be used to confirm technical suitability.

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Yes. Our sourcing team can review shortage and obsolete-part requirements and help check available supply channels or possible alternatives when appropriate.

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