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Single Diodes

Browse available Single Diodes part numbers with manufacturer references, stock information, pricing, datasheets and key specifications. Use the table below to compare options for your project.

For BOM, shortage or hard-to-find requirements, send your part number and quantity to Winsun (HK) Electronics for availability, lead-time and quotation support.

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Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
JANTX1N5807 Microchip Technology

JANTX1N5807

DIODE GEN PURP 50V 3A AXIAL

Microchip Technology

6,359 -
Datasheet - B, Axial Bulk Active Standard 50 V 3A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 50 V 60pF @ 10V, 1MHz Military MIL-PRF-19500/477 Through Hole B, Axial -65°C ~ 175°C
JANTX1N5711-1/TR Microchip Technology

JANTX1N5711-1/TR

DIODE SCHOTTKY 50V 33MA DO35

Microchip Technology

4,418 -
Datasheet - DO-204AH, DO-35, Axial Tape & Reel (TR) Active Schottky 50 V 33mA 1 V @ 15 mA Small Signal =< 200mA (Io), Any Speed - 200 nA @ 50 V 2pF @ 0V, 1MHz Military MIL-PRF-19500/444 Through Hole DO-204AH (DO-35) -65°C ~ 150°C
JANTX1N5806US/TR Microchip Technology

JANTX1N5806US/TR

DIODE GEN PURP 150V 1A D-5A

Microchip Technology

9,012 -
Datasheet - SQ-MELF, A Tape & Reel (TR) Active Standard 150 V 1A 975 mV @ 2.5 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 150 V 25pF @ 10V, 1MHz Military MIL-PRF-19500/477 Surface Mount D-5A -65°C ~ 175°C
JANTX1N5417/TR Microchip Technology

JANTX1N5417/TR

DIODE GEN PURP 200V 3A

Microchip Technology

5,809 -
Datasheet - B, Axial Tape & Reel (TR) Active Standard 200 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 200 V - Military MIL-PRF-19500/411 Through Hole B, Axial -65°C ~ 175°C
JANTX1N5416/TR Microchip Technology

JANTX1N5416/TR

DIODE GEN PURP 100V 3A

Microchip Technology

8,008 -
Datasheet - B, Axial Tape & Reel (TR) Active Standard 100 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 100 V - Military MIL-PRF-19500/411 Through Hole B, Axial -65°C ~ 175°C
1N6661/TR Microchip Technology

1N6661/TR

DIODE GEN PURP 225V 500MA DO35

Microchip Technology

4,612 -
Datasheet - DO-204AH, DO-35, Axial Tape & Reel (TR) Active Standard 225 V 500mA 1 V @ 400 mA Standard Recovery >500ns, > 200mA (Io) - 50 nA @ 225 V - - - Through Hole DO-204AH (DO-35) -65°C ~ 175°C
VS-41HFR100 Vishay General Semiconductor - Diodes Division

VS-41HFR100

DIODE GP REV 1KV 40A DO203AB

Vishay General Semiconductor - Diodes Division

5,038 -
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 1000 V 40A 1.3 V @ 125 A Standard Recovery >500ns, > 200mA (Io) - 9 mA @ 1000 V - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 190°C
JAN1N5553 Microchip Technology

JAN1N5553

DIODE GEN PURP 800V 3A AXIAL

Microchip Technology

9,356 -
Datasheet - B, Axial Bulk Active Standard 800 V 3A 1.3 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 800 V - Military MIL-PRF-19500/420 Through Hole B, Axial -65°C ~ 175°C
JAN1N5554 Microchip Technology

JAN1N5554

DIODE GEN PURP 1KV 3A AXIAL

Microchip Technology

5,666 -
Datasheet - B, Axial Bulk Active Standard 1000 V 3A 1.3 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 1000 V - Military MIL-PRF-19500/420 Through Hole B, Axial -65°C ~ 175°C
1N5552US Microchip Technology

1N5552US

DIODE GEN PURP 600V 3A D-5B

Microchip Technology

6,263 -
Datasheet - SQ-MELF, E Bulk Active Standard 600 V 3A 1.2 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 600 V - - - Surface Mount D-5B -65°C ~ 175°C
1N6639 Microchip Technology

1N6639

DIODE GEN PURP 75V 300MA DO35

Microchip Technology

4,317 -
Datasheet - DO-204AH, DO-35, Axial Bulk Active Standard 75 V 300mA 1.2 V @ 500 mA Fast Recovery =< 500ns, > 200mA (Io) 4 ns - - - - Through Hole DO-204AH (DO-35) -65°C ~ 175°C
1N6640 Microchip Technology

1N6640

DIODE GEN PURPOSE

Microchip Technology

8,798 -
Datasheet * - Bulk Active - - - - - - - - - - - - -
1N5623E3/TR Microchip Technology

1N5623E3/TR

STD RECTIFIER

Microchip Technology

5,041 -
Datasheet - - Tape & Reel (TR) Active - - - - - - - - - - - - -
VS-88HF40 Vishay General Semiconductor - Diodes Division

VS-88HF40

DIODE GEN PURP 400V 85A DO203AB

Vishay General Semiconductor - Diodes Division

4,808 -
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard 400 V 85A 1.2 V @ 267 A Standard Recovery >500ns, > 200mA (Io) - - - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 180°C
VS-88HFR40 Vishay General Semiconductor - Diodes Division

VS-88HFR40

DIODE GP REV 400V 85A DO203AB

Vishay General Semiconductor - Diodes Division

6,917 -
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 400 V 85A 1.2 V @ 267 A Standard Recovery >500ns, > 200mA (Io) - - - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 180°C
JANTX1N6643US Microchip Technology

JANTX1N6643US

DIODE GEN PURP 125V 300MA D-5D

Microchip Technology

2,162 -
Datasheet - SQ-MELF, D Bulk Active Standard 125 V 300mA 1.2 V @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) 6 ns 50 nA @ 20 V 5pF @ 0V, 1MHz Military MIL-PRF-19500/578 Surface Mount D-5D -65°C ~ 175°C
JANTX1N6643U Microchip Technology

JANTX1N6643U

DIODE GEN PURP 50V 300MA D-5B

Microchip Technology

4,059 -
Datasheet - SQ-MELF, E Bulk Active Standard 50 V 300mA 1.2 V @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) 20 ns 500 nA @ 50 V - Military MIL-PRF-19500/578 Surface Mount D-5B -65°C ~ 175°C
DGS10-018A IXYS

DGS10-018A

DIODE SCHOTTKY 180V 15A TO220AC

IXYS

3,809 -
Datasheet - TO-220-2 Tube Obsolete Schottky 180 V 15A 1.1 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) - 1.3 mA @ 180 V - - - Through Hole TO-220AC -55°C ~ 175°C
DGS10-025A IXYS

DGS10-025A

DIODE SCHOTTKY 250V 12A TO220AC

IXYS

4,871 -
Datasheet - TO-220-2 Tube Obsolete Schottky 250 V 12A 1.5 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) - 1.3 mA @ 250 V - - - Through Hole TO-220AC -55°C ~ 175°C
DGS10-030A IXYS

DGS10-030A

DIODE SCHOTTKY 300V 11A TO220AC

IXYS

2,927 -
Datasheet - TO-220-2 Tube Obsolete Schottky 300 V 11A 2 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) - 1.3 mA @ 300 V - - - Through Hole TO-220AC -55°C ~ 175°C
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WINSUN SOURCING SUPPORT

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Send the manufacturer, part number, quantity and target delivery requirement. Winsun (HK) Electronics can assist with availability checks, quotation support, shortage sourcing and hard-to-find or obsolete components.

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FREQUENTLY ASKED QUESTIONS

Single Diodes FAQ

Common questions about selecting, comparing and sourcing Single Diodes components through Winsun (HK) Electronics.

What should I check when selecting Single Diodes components?

Compare the manufacturer part number, electrical specifications, package, operating conditions and application requirements. The product datasheet should be used to confirm technical suitability.

Can Winsun help source specific Single Diodes part numbers?

Yes. Send the exact part number, manufacturer and required quantity. Winsun (HK) Electronics can assist with availability checks, quotation support and sourcing options based on your requirement.

Do you support shortage, obsolete or hard-to-find Single Diodes parts?

Yes. Our sourcing team can review shortage and obsolete-part requirements and help check available supply channels or possible alternatives when appropriate.

How do I request a quote for Single Diodes components?

Submit an RFQ with the part number, manufacturer, quantity and target delivery requirement. Our sales team will review your request and follow up with current sourcing information.