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Single Diodes

Browse available Single Diodes part numbers with manufacturer references, stock information, pricing, datasheets and key specifications. Use the table below to compare options for your project.

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Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
JAN1N5623/TR Microchip Technology

JAN1N5623/TR

DIODE GEN PURP 1KV 1A

Microchip Technology

2,450 -
Datasheet - A, Axial Tape & Reel (TR) Active Standard 1000 V 1A 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 500 ns 500 nA @ 1 V - Military MIL-PRF-19500/429 Through Hole A, Axial -65°C ~ 175°C
VS-70HFLR40S05 Vishay General Semiconductor - Diodes Division

VS-70HFLR40S05

DIODE GP REV 400V 70A DO203AB

Vishay General Semiconductor - Diodes Division

7,374 -
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 400 V 70A 1.85 V @ 219.8 A Fast Recovery =< 500ns, > 200mA (Io) 500 ns 100 µA @ 400 V - - - Chassis, Stud Mount DO-203AB (DO-5) -40°C ~ 125°C
GP3D040A065U SemiQ

GP3D040A065U

DIODE SIL CARB 650V 40A TO247-3

SemiQ

3,520 -
Datasheet Amp+™ TO-247-3 Tube Active SiC (Silicon Carbide) Schottky 650 V 40A 1.7 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V 835pF @ 1V, 1MHz - - Through Hole TO-247-3 -55°C ~ 175°C
JANTX1N5553/TR Microchip Technology

JANTX1N5553/TR

DIODE GEN PURP 800V 5A

Microchip Technology

9,476 -
Datasheet - B, Axial Tape & Reel (TR) Active Standard 800 V 5A 1.3 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 800 V - Military MIL-PRF-19500/420 Through Hole B, Axial -65°C ~ 175°C
JANTXV1N5618 Microchip Technology

JANTXV1N5618

DIODE GEN PURP 600V 1A AXIAL

Microchip Technology

2,822 -
Datasheet - A, Axial Bulk Active Standard 600 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 600 V - Military MIL-PRF-19500/427 Through Hole A, Axial -65°C ~ 200°C
JANTXV1N4245 Microchip Technology

JANTXV1N4245

DIODE GEN PURP 200V 1A AXIAL

Microchip Technology

7,684 -
Datasheet - A, Axial Bulk Active Standard 200 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 5 µs 1 µA @ 200 V - Military MIL-PRF-19500/286 Through Hole A, Axial -65°C ~ 175°C
1N6642 Microchip Technology

1N6642

DIODE GEN PURPOSE

Microchip Technology

3,955 -
Datasheet - DO-204AH, DO-35, Axial Bulk Active Standard 75 V 300mA 1.2 V @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) 5 ns 500 nA @ 75 V 5pF @ 0V, 1MHz - - Through Hole DO-204AH (DO-35) -65°C ~ 175°C
1N5553/TR Microchip Technology

1N5553/TR

STD RECTIFIER

Microchip Technology

2,724 -
Datasheet - B, Axial Tape & Reel (TR) Active Standard 800 V 3A 1.2 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 800 V - - - Through Hole B, Axial -65°C ~ 175°C
VS-70HFL10S02 Vishay General Semiconductor - Diodes Division

VS-70HFL10S02

DIODE GEN PURP 100V 70A DO203AB

Vishay General Semiconductor - Diodes Division

7,756 -
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard 100 V 70A 1.85 V @ 219.8 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 100 µA @ 100 V - - - Chassis, Stud Mount DO-203AB (DO-5) -40°C ~ 125°C
FR12G02 GeneSiC Semiconductor

FR12G02

DIODE GEN PURP 400V 12A DO4

GeneSiC Semiconductor

4,606 -
Datasheet - DO-203AA, DO-4, Stud Bulk Active Standard 400 V 12A 800 mV @ 12 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 25 µA @ 100 V - - - Chassis, Stud Mount DO-4 -65°C ~ 150°C
FR12J02 GeneSiC Semiconductor

FR12J02

DIODE GEN PURP 600V 12A DO4

GeneSiC Semiconductor

5,764 -
Datasheet - DO-203AA, DO-4, Stud Bulk Active Standard 600 V 12A 800 mV @ 12 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 25 µA @ 100 V - - - Chassis, Stud Mount DO-4 -65°C ~ 150°C
FR12B02 GeneSiC Semiconductor

FR12B02

DIODE GEN PURP 100V 12A DO4

GeneSiC Semiconductor

5,000 -
Datasheet - DO-203AA, DO-4, Stud Bulk Active Standard 100 V 12A 800 mV @ 12 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 25 µA @ 100 V - - - Chassis, Stud Mount DO-4 -65°C ~ 150°C
FR12D02 GeneSiC Semiconductor

FR12D02

DIODE GEN PURP 200V 12A DO4

GeneSiC Semiconductor

5,710 -
Datasheet - DO-203AA, DO-4, Stud Bulk Active Standard 200 V 12A 800 mV @ 12 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 25 µA @ 100 V - - - Chassis, Stud Mount DO-4 -65°C ~ 150°C
FR16K05 GeneSiC Semiconductor

FR16K05

DIODE GEN PURP 800V 16A DO4

GeneSiC Semiconductor

3,550 -
Datasheet - DO-203AA, DO-4, Stud Bulk Active Standard 800 V 16A 1.1 V @ 16 A Fast Recovery =< 500ns, > 200mA (Io) 500 ns 25 µA @ 100 V - - - Chassis, Stud Mount DO-4 -65°C ~ 150°C
1N6620 Microchip Technology

1N6620

DIODE GEN PURP 220V 1.2A AXIAL

Microchip Technology

6,622 -
Datasheet - A, Axial Bulk Active Standard 220 V 1.2A 1.4 V @ 1.2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 500 nA @ 220 V 10pF @ 10V, 1MHz - - Through Hole A, Axial -65°C ~ 150°C
JPAD50 TO-92 2L Linear Integrated Systems, Inc.

JPAD50 TO-92 2L

DIODE GEN PURP 35V 10MA TO92

Linear Integrated Systems, Inc.

4,458 -
Datasheet PAD TO-226-2, TO-92-2 (TO-226AC) Bulk Active Standard 35 V 10mA 1.5 V @ 5 mA Small Signal =< 200mA (Io), Any Speed - 50 pA @ 20 V 1.5pF @ 5V, 1MHz - - Through Hole TO-92 -55°C ~ 150°C
JAN1N5617US Microchip Technology

JAN1N5617US

DIODE GEN PURP 400V 1A D-5A

Microchip Technology

8,424 -
Datasheet - SQ-MELF, A Bulk Active Standard 400 V 1A 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 500 nA @ 400 V - Military MIL-PRF-19500/429 Surface Mount D-5A -65°C ~ 175°C
FFSH20120A onsemi

FFSH20120A

DIODE SIL CARB 1.2KV 30A TO247-2

onsemi

2,749 -
Datasheet - TO-247-2 Tube Obsolete SiC (Silicon Carbide) Schottky 1200 V 30A 1.75 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1200 V 1220pF @ 1V, 100KHz - - Through Hole TO-247-2 -
JANTXV1N5618/TR Microchip Technology

JANTXV1N5618/TR

DIODE GEN PURP 600V 1A

Microchip Technology

2,472 -
Datasheet - A, Axial Tape & Reel (TR) Active Standard 600 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 600 V - Military MIL-PRF-19500/427 Through Hole A, Axial -65°C ~ 200°C
JAN1N5187/TR Microchip Technology

JAN1N5187/TR

DIODE GEN PURP 200V 3A AXIAL

Microchip Technology

2,112 -
Datasheet - B, Axial Tape & Reel (TR) Active Standard 200 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 2 µA @ 200 V - Military MIL-PRF-19500/424 Through Hole B, Axial -65°C ~ 175°C
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WINSUN SOURCING SUPPORT

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FREQUENTLY ASKED QUESTIONS

Single Diodes FAQ

Common questions about selecting, comparing and sourcing Single Diodes components through Winsun (HK) Electronics.

What should I check when selecting Single Diodes components?

Compare the manufacturer part number, electrical specifications, package, operating conditions and application requirements. The product datasheet should be used to confirm technical suitability.

Can Winsun help source specific Single Diodes part numbers?

Yes. Send the exact part number, manufacturer and required quantity. Winsun (HK) Electronics can assist with availability checks, quotation support and sourcing options based on your requirement.

Do you support shortage, obsolete or hard-to-find Single Diodes parts?

Yes. Our sourcing team can review shortage and obsolete-part requirements and help check available supply channels or possible alternatives when appropriate.

How do I request a quote for Single Diodes components?

Submit an RFQ with the part number, manufacturer, quantity and target delivery requirement. Our sales team will review your request and follow up with current sourcing information.