Single Diodes

Browse available Single Diodes part numbers with manufacturer references, stock information, pricing, datasheets and key specifications. Use the table below to compare options for your project.

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
UTR62 DIODE GEN PURP 600V 2A A AXIAL Microchip Technology	2,118	-	RFQ	Datasheet	-	A, Axial	Bulk	Active	Standard	600 V	2A	1.1 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	400 ns	3 µA @ 600 V	40pF @ 0V, 1MHz	-	-	Through Hole	A, Axial	-65°C ~ 175°C
JANTX1N5419 DIODE GEN PURP 500V 3A AXIAL Microchip Technology	9,180	-	RFQ	Datasheet	-	B, Axial	Bulk	Active	Standard	500 V	3A	1.5 V @ 9 A	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	1 µA @ 500 V	-	Military	MIL-PRF-19500/411	Through Hole	B, Axial	-65°C ~ 175°C
LSIC2SD120D10 DIODE SIL CARB 1.2KV 28A TO263L Littelfuse Inc.	5,546	-	RFQ	Datasheet	Gen2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	SiC (Silicon Carbide) Schottky	1200 V	28A	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 1200 V	582pF @ 1V, 1MHz	-	-	Surface Mount	TO-263-2L	-55°C ~ 175°C
JAN1N5420/TR DIODE GEN PURP 600V 3A B AXIAL Microchip Technology	6,191	-	RFQ	Datasheet	-	B, Axial	Tape & Reel (TR)	Active	Standard	600 V	3A	1.5 V @ 9 A	Fast Recovery =< 500ns, > 200mA (Io)	400 ns	1 µA @ 600 V	-	Military	MIL-PRF-19500/411	Through Hole	B, Axial	-65°C ~ 175°C
WBST080SCM120CGALW WBST080SCM120CGAL/NAU000/NO MARK WeEn Semiconductors	4,318	-	RFQ	Datasheet	-	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
LSIC2SD065C16A DIODE SIL CARB 650V 38A TO252 Littelfuse Inc.	9,017	-	RFQ	Datasheet	Gen2	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	SiC (Silicon Carbide) Schottky	650 V	38A	1.8 V @ 16 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	730pF @ 1V, 1MHz	-	-	Surface Mount	TO-252 (DPAK)	-55°C ~ 175°C
80EPF12 DIODE GEN PURP 1.2KV 80A TO247AC Vishay General Semiconductor - Diodes Division	6,130	-	RFQ	Datasheet	-	TO-247-3	Tube	Obsolete	Standard	1200 V	80A	1.35 V @ 80 A	Fast Recovery =< 500ns, > 200mA (Io)	480 ns	100 µA @ 1200 V	-	-	-	Through Hole	TO-247AC	-65°C ~ 175°C
JANTXV1N5417/TR DIODE GEN PURP 200V 3A Microchip Technology	9,598	-	RFQ	Datasheet	-	B, Axial	Tape & Reel (TR)	Active	Standard	200 V	3A	1.5 V @ 9 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	1 µA @ 200 V	-	Military	MIL-PRF-19500/411	Through Hole	B, Axial	-65°C ~ 175°C
121NQ040 DIODE SCHOTTKY 40V 120A D-67 Vishay General Semiconductor - Diodes Division	3,604	-	RFQ	Datasheet	-	D-67 HALF-PAK	Bulk	Obsolete	Schottky	40 V	120A	650 mV @ 120 A	Fast Recovery =< 500ns, > 200mA (Io)	-	10 mA @ 40 V	5200pF @ 5V, 1MHz	-	-	Chassis Mount	D-67 HALF-PAK	-
AIDW40S65C5XKSA1 DIODE SIL CARB 650V 40A TO247-3 Infineon Technologies	3,227	-	RFQ	Datasheet	CoolSiC™	TO-247-3	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	40A	1.7 V @ 40 A	No Recovery Time > 500mA (Io)	0 ns	120 µA @ 650 V	1138pF @ 1V, 1MHz	Automotive	AEC-Q100/101	Through Hole	PG-TO247-3-41	-40°C ~ 175°C
CDLL5819E3/TR DIODE SCHOTTKY 45V 1A DO213AB Microchip Technology	3,322	-	RFQ	Datasheet	-	DO-213AB, MELF (Glass)	Tape & Reel (TR)	Active	Schottky	45 V	1A	490 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 45 V	70pF @ 5V, 1MHz	-	-	Surface Mount	DO-213AB	-65°C ~ 125°C
JANTX1N5419/TR DIODE GEN PURP 500V 3A Microchip Technology	4,929	-	RFQ	Datasheet	-	B, Axial	Tape & Reel (TR)	Active	Standard	500 V	3A	1.5 V @ 9 A	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	1 µA @ 500 V	-	Military	MIL-PRF-19500/411	Through Hole	B, Axial	-65°C ~ 175°C
UT252 DIODE GEN PURP 200V 1A A AXIAL Microchip Technology	4,679	-	RFQ	Datasheet	-	A, Axial	Bulk	Active	Standard	200 V	1A	1 V @ 750 mA	Standard Recovery >500ns, > 200mA (Io)	-	2 µA @ 200 V	-	-	-	Through Hole	A, Axial	-65°C ~ 175°C
JAN1N5417US DIODE GEN PURP 200V 3A B SQ-MELF Microchip Technology	6,610	-	RFQ	Datasheet	-	SQ-MELF, B	Bulk	Active	Standard	200 V	3A	1.5 V @ 9 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	1 µA @ 200 V	-	Military	MIL-PRF-19500/411	Surface Mount	B, SQ-MELF	-65°C ~ 175°C
JANTXV1N4248/TR DIODE GEN PURP 800V 1A Microchip Technology	9,011	-	RFQ	Datasheet	-	A, Axial	Tape & Reel (TR)	Active	Standard	800 V	1A	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	5 µs	1 µA @ 800 V	-	Military	MIL-PRF-19500/286	Through Hole	A, Axial	-65°C ~ 175°C
GB10SLT12-220 DIODE SIL CARB 1.2KV 10A TO220-2 GeneSiC Semiconductor	7,227	-	RFQ	Datasheet	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	1200 V	10A	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 1200 V	520pF @ 1V, 1MHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
CN5179 BK TIN/LEAD DIODE GEN PURP 20V DO35 Central Semiconductor Corp	7,101	-	RFQ	Datasheet	-	DO-204AH, DO-35, Axial	Box	Obsolete	Standard	20 V	-	3.7 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	-	10 µA @ 20 V	-	-	-	Through Hole	DO-35	-65°C ~ 150°C
JANTX1N5614US DIODE GEN PURP 200V 1A D-5A Microchip Technology	3,826	-	RFQ	Datasheet	-	SQ-MELF, A	Bulk	Active	Standard	200 V	1A	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	500 nA @ 200 V	-	Military	MIL-PRF-19500/437	Surface Mount	D-5A	-65°C ~ 200°C
SIC20120B-BP Interface Micro Commercial Co	3,825	-	RFQ	Datasheet	-	TO-220-2	Bulk	Last Time Buy	SiC (Silicon Carbide) Schottky	1200 V	20A	1.8 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 1200 V	-	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
VS-86HF80 DIODE GEN PURP 800V 85A DO203AB Vishay General Semiconductor - Diodes Division	5,650	-	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard	800 V	85A	1.2 V @ 267 A	Standard Recovery >500ns, > 200mA (Io)	-	9 mA @ 800 V	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-65°C ~ 180°C

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Compare the manufacturer part number, electrical specifications, package, operating conditions and application requirements. The product datasheet should be used to confirm technical suitability.

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Yes. Our sourcing team can review shortage and obsolete-part requirements and help check available supply channels or possible alternatives when appropriate.

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