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Single Diodes

Browse available Single Diodes part numbers with manufacturer references, stock information, pricing, datasheets and key specifications. Use the table below to compare options for your project.

For BOM, shortage or hard-to-find requirements, send your part number and quantity to Winsun (HK) Electronics for availability, lead-time and quotation support.

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Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
GKN71/16 GeneSiC Semiconductor

GKN71/16

DIODE GEN PURP 1.6KV 95A DO5

GeneSiC Semiconductor

6,077 -
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard 1600 V 95A 1.5 V @ 60 A Standard Recovery >500ns, > 200mA (Io) - 10 mA @ 1600 V - - - Chassis, Stud Mount DO-5 -40°C ~ 180°C
JANTXV1N5621/TR Microchip Technology

JANTXV1N5621/TR

DIODE GEN PURP 800V 1A

Microchip Technology

9,227 -
Datasheet - A, Axial Tape & Reel (TR) Active Standard 800 V 1A 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 300 ns 500 nA @ 800 V 20pF @ 12V, 1MHz Military MIL-PRF-19500/429 Through Hole A, Axial -65°C ~ 175°C
JANTXV1N6640/TR Microchip Technology

JANTXV1N6640/TR

DIODE GEN PURP 50V 300MA DO35

Microchip Technology

9,903 -
Datasheet - DO-204AH, DO-35, Axial Tape & Reel (TR) Active Standard 50 V 300mA 1 V @ 200 mA Fast Recovery =< 500ns, > 200mA (Io) 4 ns 100 nA @ 50 V - Military MIL-PRF-19500/609 Through Hole DO-204AH (DO-35) -65°C ~ 175°C
JANTXV1N6639US/TR Microchip Technology

JANTXV1N6639US/TR

SIGNAL OR COMPUTER DIODE

Microchip Technology

3,836 -
Datasheet * - Tape & Reel (TR) Active - - - - - - - - - - - - -
1N5811AUS Microsemi Corporation

1N5811AUS

RECTIFIER DIODE

Microsemi Corporation

3,469 -
Datasheet - - Bulk Active - - - - - - - - - - - - -
JAN1N5550US/TR Microchip Technology

JAN1N5550US/TR

DIODE GEN PURP 200V 3A D-5B

Microchip Technology

3,839 -
Datasheet - SQ-MELF, E Tape & Reel (TR) Active Standard 200 V 3A 1.2 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 200 V - Military MIL-PRF-19500/420 Surface Mount D-5B -65°C ~ 175°C
JANTX1N5188/TR Microchip Technology

JANTX1N5188/TR

DIODE GEN PURP 400V 3A

Microchip Technology

6,788 -
Datasheet - B, Axial Tape & Reel (TR) Active Standard 400 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 2 µA @ 400 V - Military MIL-PRF-19500/424 Through Hole B, Axial -65°C ~ 175°C
JAN1N4153UR-1 Microchip Technology

JAN1N4153UR-1

DIODE GEN PURP 50V 150MA DO213AA

Microchip Technology

4,423 -
Datasheet - DO-213AA Bulk Active Standard 50 V 150mA 880 mV @ 20 mA Small Signal =< 200mA (Io), Any Speed 4 ns - - Military MIL-PRF-19500/337 Surface Mount DO-213AA -65°C ~ 175°C
JAN1N3595AUR-1/TR Microchip Technology

JAN1N3595AUR-1/TR

SIGNAL OR COMPUTER DIODE

Microchip Technology

7,753 -
Datasheet - DO-213AA Tape & Reel (TR) Active Standard 125 V 150mA 920 mV @ 100 mA Small Signal =< 200mA (Io), Any Speed 3 µs 2 nA @ 125 V - Military MIL-PRF-19500/241 Surface Mount DO-213AA -65°C ~ 175°C
JANTX1N5418US Microchip Technology

JANTX1N5418US

DIODE GEN PURP 400V 3A D-5B

Microchip Technology

7,496 -
Datasheet - SQ-MELF, E Bulk Active Standard 400 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 2 µA @ 400 V - Military MIL-PRF-19500/411 Surface Mount D-5B -65°C ~ 175°C
JANTXV1N5622 Microchip Technology

JANTXV1N5622

DIODE GEN PURP 1KV 1A AXIAL

Microchip Technology

4,223 -
Datasheet - A, Axial Bulk Active Standard 1000 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 1000 V - Military MIL-PRF-19500/427 Through Hole A, Axial -65°C ~ 200°C
JAN1N5802US/TR Microchip Technology

JAN1N5802US/TR

DIODE GEN PURP 50V 2.5A D-5A

Microchip Technology

4,628 -
Datasheet - SQ-MELF, A Tape & Reel (TR) Active Standard 50 V 2.5A 975 mV @ 2.5 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 50 V 25pF @ 10V, 1MHz Military MIL-PRF-19500/477 Surface Mount D-5A -65°C ~ 175°C
GKR71/16 GeneSiC Semiconductor

GKR71/16

DIODE GEN PURP 1.6KV 95A DO5

GeneSiC Semiconductor

8,471 -
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard 1600 V 95A 1.5 V @ 60 A Standard Recovery >500ns, > 200mA (Io) - 10 mA @ 1600 V - - - Chassis, Stud Mount DO-5 -40°C ~ 180°C
PCFFS40120AF onsemi

PCFFS40120AF

DIODE SIL CARB 1.2KV WAFER DIE

onsemi

2,472 -
Datasheet - Die Tray Active SiC (Silicon Carbide) Schottky 1200 V 61A 1.75 V @ 40 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1200 V 2250pf @ 1V, 100kHz - - Surface Mount Die -55°C ~ 175°C
GKR71/12 GeneSiC Semiconductor

GKR71/12

DIODE GEN PURP 1.2KV 95A DO5

GeneSiC Semiconductor

8,945 -
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard 1200 V 95A 1.5 V @ 60 A Standard Recovery >500ns, > 200mA (Io) - 10 mA @ 1200 V - - - Chassis, Stud Mount DO-5 -40°C ~ 180°C
JAN1N5416US Microchip Technology

JAN1N5416US

DIODE GEN PURP 100V 3A AXIAL

Microchip Technology

3,311 -
Datasheet - B, Axial Bulk Active Standard 100 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 100 V - Military MIL-PRF-19500/411 Through Hole B, Axial -65°C ~ 175°C
JAN1N5420US Microchip Technology

JAN1N5420US

DIODE GEN PURP 600V 3A D-5B

Microchip Technology

3,721 -
Datasheet - SQ-MELF, E Bulk Active Standard 600 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 400 ns 1 µA @ 600 V - Military MIL-PRF-19500/411 Surface Mount D-5B -65°C ~ 175°C
1N6662 Microchip Technology

1N6662

DIODE GEN PURP 400V 500MA DO35

Microchip Technology

6,671 -
Datasheet - DO-204AH, DO-35, Axial Bulk Active Standard 400 V 500mA 1 V @ 400 mA Standard Recovery >500ns, > 200mA (Io) - 50 nA @ 400 V - - - Through Hole DO-204AH (DO-35) -65°C ~ 175°C
JANTX1N5419US/TR Microchip Technology

JANTX1N5419US/TR

UFR,FRR

Microchip Technology

4,193 -
Datasheet - SQ-MELF, B Tape & Reel (TR) Active Standard 500 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 1 µA @ 500 V - Military MIL-PRF-19500/411 Surface Mount B, SQ-MELF -65°C ~ 175°C
SICPT40120YA-BP Micro Commercial Co

SICPT40120YA-BP

SCHOTTKY DIODES

Micro Commercial Co

6,954 -
Datasheet - TO-247-2 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 40A 1.58 V @ 40 A No Recovery Time > 500mA (Io) 0 ns 38 µA @ 1200 V 2900pF @ 0V, 1MHz - - Through Hole TO-247AD -55°C ~ 175°C
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WINSUN SOURCING SUPPORT

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Send the manufacturer, part number, quantity and target delivery requirement. Winsun (HK) Electronics can assist with availability checks, quotation support, shortage sourcing and hard-to-find or obsolete components.

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FREQUENTLY ASKED QUESTIONS

Single Diodes FAQ

Common questions about selecting, comparing and sourcing Single Diodes components through Winsun (HK) Electronics.

What should I check when selecting Single Diodes components?

Compare the manufacturer part number, electrical specifications, package, operating conditions and application requirements. The product datasheet should be used to confirm technical suitability.

Can Winsun help source specific Single Diodes part numbers?

Yes. Send the exact part number, manufacturer and required quantity. Winsun (HK) Electronics can assist with availability checks, quotation support and sourcing options based on your requirement.

Do you support shortage, obsolete or hard-to-find Single Diodes parts?

Yes. Our sourcing team can review shortage and obsolete-part requirements and help check available supply channels or possible alternatives when appropriate.

How do I request a quote for Single Diodes components?

Submit an RFQ with the part number, manufacturer, quantity and target delivery requirement. Our sales team will review your request and follow up with current sourcing information.