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Single Diodes

Browse available Single Diodes part numbers with manufacturer references, stock information, pricing, datasheets and key specifications. Use the table below to compare options for your project.

For BOM, shortage or hard-to-find requirements, send your part number and quantity to Winsun (HK) Electronics for availability, lead-time and quotation support.

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Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
1N6631U Microchip Technology

1N6631U

DIODE GEN PURP 1KV 1.4A E-MELF

Microchip Technology

7,180 -
Datasheet - SQ-MELF, B Bulk Active Standard 1000 V 1.4A 1.6 V @ 1.4 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 4 µA @ 1000 V - - - Surface Mount E-MELF -65°C ~ 150°C
1N6628US/TR Microchip Technology

1N6628US/TR

DIODE GEN PURP 600V 2.3A D-5B

Microchip Technology

7,660 -
Datasheet - SQ-MELF, E Tape & Reel (TR) Active Standard 600 V 2.3A 1.5 V @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 45 ns 2 µA @ 600 V 40pF @ 10V, 1MHz - - Surface Mount D-5B -65°C ~ 150°C
1N6628U/TR Microchip Technology

1N6628U/TR

DIODE GP 660V 1.75A SQ-MELF

Microchip Technology

6,757 -
Datasheet - SQ-MELF, B Tape & Reel (TR) Active Standard 660 V 1.75A 1.35 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 45 ns 2 µA @ 660 V 40pF @ 10V, 1MHz - - Surface Mount B, SQ-MELF -65°C ~ 150°C
1N6631US/TR Microchip Technology

1N6631US/TR

DIODE GEN PURP 1.1KV 1.4A A-MELF

Microchip Technology

8,807 -
Datasheet - SQ-MELF, A Tape & Reel (TR) Active Standard 1100 V 1.4A 1.4 V @ 1.4 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 4 µA @ 1100 V 40pF @ 10V, 1MHz - - Surface Mount A-MELF -65°C ~ 150°C
1N6631U/TR Microchip Technology

1N6631U/TR

DIODE GEN PURP 1KV 1.4A E-MELF

Microchip Technology

5,767 -
Datasheet - SQ-MELF, B Tape & Reel (TR) Active Standard 1000 V 1.4A 1.6 V @ 1.4 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 4 µA @ 1000 V - - - Surface Mount E-MELF -65°C ~ 150°C
JANTX1N3646 Microchip Technology

JANTX1N3646

DIODE GP 1.75KV 250MA S AXIAL

Microchip Technology

8,411 -
Datasheet - S, Axial Bulk Active Standard 1750 V 250mA 5 V @ 250 mA Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 1750 V - Military MIL-PRF-19500/279 Through Hole S, Axial -65°C ~ 175°C
GB25MPS17-247 GeneSiC Semiconductor

GB25MPS17-247

DIODE SIL CARB 1.7KV 52A TO247-2

GeneSiC Semiconductor

6,756 -
Datasheet SiC Schottky MPS™ TO-247-2 Tube Obsolete SiC (Silicon Carbide) Schottky 1700 V 52A 1.8 V @ 25 A No Recovery Time > 500mA (Io) 0 ns 10 µA @ 1700 V 2350pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
1N5832R GeneSiC Semiconductor

1N5832R

DIODE SCHOTTKY REV 20V 40A DO5

GeneSiC Semiconductor

6,546 -
Datasheet - DO-203AB, DO-5, Stud Bulk Active Schottky, Reverse Polarity 20 V 40A 520 mV @ 40 A Fast Recovery =< 500ns, > 200mA (Io) - 20 mA @ 10 V - - - Chassis, Stud Mount DO-5 -65°C ~ 150°C
1N5833R GeneSiC Semiconductor

1N5833R

DIODE SCHOTTKY REV 30V 40A DO5

GeneSiC Semiconductor

2,466 -
Datasheet - DO-203AB, DO-5, Stud Bulk Active Schottky, Reverse Polarity 30 V 40A 550 mV @ 40 A Fast Recovery =< 500ns, > 200mA (Io) - 20 mA @ 10 V - - - Chassis, Stud Mount DO-5 -65°C ~ 150°C
1N5834R GeneSiC Semiconductor

1N5834R

DIODE SCHOTTKY REV 40V 40A DO5

GeneSiC Semiconductor

6,689 -
Datasheet - DO-203AB, DO-5, Stud Bulk Active Schottky, Reverse Polarity 40 V 40A 590 mV @ 40 A Fast Recovery =< 500ns, > 200mA (Io) - 20 mA @ 10 V - - - Chassis, Stud Mount DO-5 -65°C ~ 150°C
HS24515E3 Microsemi Corporation

HS24515E3

DIODE SCHOTTKY 15V 240A HALF-PAK

Microsemi Corporation

8,047 -
Datasheet - HALF-PAK Tube Obsolete Schottky 15 V 240A 370 mV @ 240 A Fast Recovery =< 500ns, > 200mA (Io) - 150 mA @ 15 V 21700pF @ 5V, 1MHz - - Chassis Mount HALF-PAK -
JANTXV1N6620US Microchip Technology

JANTXV1N6620US

DIODE GEN PURP 220V 1.2A D-5A

Microchip Technology

2,170 -
Datasheet - SQ-MELF, A Bulk Active Standard 220 V 1.2A 1.4 V @ 1.2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 500 nA @ 220 V - Military MIL-PRF-19500/585 Surface Mount D-5A -65°C ~ 150°C
JAN1N6076 Microchip Technology

JAN1N6076

DIODE GEN PURP 50V 1.3A E-PAK

Microchip Technology

8,709 -
Datasheet - E, Axial Bulk Active Standard 50 V 1.3A 1.76 V @ 18.8 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 50 V - Military MIL-PRF-19500/503 Through Hole E-PAK -65°C ~ 155°C
JAN1N6077 Microchip Technology

JAN1N6077

DIODE GEN PURP 100V 1.3A E-PAK

Microchip Technology

3,037 -
Datasheet - E, Axial Bulk Active Standard 100 V 1.3A 1.76 V @ 18.8 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 100 V - Military MIL-PRF-19500/503 Through Hole E-PAK -65°C ~ 155°C
JANTXV1N6620U Microsemi Corporation

JANTXV1N6620U

DIODE GEN PURP 200V 1.2A D-5A

Microsemi Corporation

3,057 -
Datasheet - SQ-MELF, A Bulk Active Standard 200 V 1.2A 1.4 V @ 1.2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 500 nA @ 200 V - Military MIL-PRF-19500/585 Surface Mount D-5A -65°C ~ 150°C
DS75-12B IXYS

DS75-12B

DIODE GP 1.2KV 110A DO203AB

IXYS

4,175 -
Datasheet - DO-203AB, DO-5, Stud Box Obsolete Standard 1200 V 110A 1.17 V @ 150 A Standard Recovery >500ns, > 200mA (Io) - 6 mA @ 1200 V - - - Chassis, Stud Mount DO-203AB -40°C ~ 180°C
DSI75-12B IXYS

DSI75-12B

DIODE GP 1.2KV 110A DO203AB

IXYS

9,704 -
Datasheet - DO-203AB, DO-5, Stud Box Obsolete Standard 1200 V 110A 1.17 V @ 150 A Standard Recovery >500ns, > 200mA (Io) - 6 mA @ 1200 V - - - Chassis, Stud Mount DO-203AB -40°C ~ 180°C
JAN1N6628U Microsemi Corporation

JAN1N6628U

DIODE GEN PURP 600V 1.75A D-5B

Microsemi Corporation

9,997 -
Datasheet - SQ-MELF, E Bulk Active Standard 600 V 1.75A 1.35 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 2 µA @ 600 V - Military MIL-PRF-19500/590 Surface Mount D-5B -65°C ~ 150°C
JAN1N6628US Microchip Technology

JAN1N6628US

DIODE GEN PURP 660V 1.75A D-5B

Microchip Technology

2,873 -
Datasheet - SQ-MELF, E Bulk Active Standard 660 V 1.75A 1.35 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 2 µA @ 660 V 40pF @ 10V, 1MHz Military MIL-PRF-19500/590 Surface Mount D-5B -65°C ~ 150°C
JAN1N6630U Microsemi Corporation

JAN1N6630U

DIODE GEN PURP 900V 1.4A D-5B

Microsemi Corporation

6,375 -
Datasheet - SQ-MELF, E Bulk Active Standard 900 V 1.4A 1.4 V @ 1.4 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 2 µA @ 900 V - Military MIL-PRF-19500/590 Surface Mount D-5B -65°C ~ 150°C
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WINSUN SOURCING SUPPORT

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Send the manufacturer, part number, quantity and target delivery requirement. Winsun (HK) Electronics can assist with availability checks, quotation support, shortage sourcing and hard-to-find or obsolete components.

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FREQUENTLY ASKED QUESTIONS

Single Diodes FAQ

Common questions about selecting, comparing and sourcing Single Diodes components through Winsun (HK) Electronics.

What should I check when selecting Single Diodes components?

Compare the manufacturer part number, electrical specifications, package, operating conditions and application requirements. The product datasheet should be used to confirm technical suitability.

Can Winsun help source specific Single Diodes part numbers?

Yes. Send the exact part number, manufacturer and required quantity. Winsun (HK) Electronics can assist with availability checks, quotation support and sourcing options based on your requirement.

Do you support shortage, obsolete or hard-to-find Single Diodes parts?

Yes. Our sourcing team can review shortage and obsolete-part requirements and help check available supply channels or possible alternatives when appropriate.

How do I request a quote for Single Diodes components?

Submit an RFQ with the part number, manufacturer, quantity and target delivery requirement. Our sales team will review your request and follow up with current sourcing information.