Single Diodes

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
JAN1N6642UB/TR DIODE GEN PURP 75V 300MA UB Microchip Technology	8,552	-	RFQ	Datasheet	-	3-SMD, No Lead	Tape & Reel (TR)	Active	Standard	75 V	300mA	1.2 V @ 100 mA	Fast Recovery =< 500ns, > 200mA (Io)	5 ns	500 nA @ 75 V	5pF @ 0V, 1MHz	Military	MIL-PRF-19500/578	Surface Mount	UB	-65°C ~ 175°C
JANTXV1N6625US/TR DIODE GEN PURP 1.1KV 1A D-5A Microchip Technology	9,109	-	RFQ	Datasheet	-	SQ-MELF, A	Tape & Reel (TR)	Active	Standard	1100 V	1A	1.75 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	1 µA @ 1100 V	-	Military	MIL-PRF-19500/585	Surface Mount	D-5A	-65°C ~ 150°C
JANTXV1N6625U/TR DIODE GP 1.1KV 1A A SQ-MELF Microchip Technology	9,889	-	RFQ	Datasheet	-	SQ-MELF, A	Tape & Reel (TR)	Active	Standard	1100 V	1A	1.75 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	80 ns	1 µA @ 1100 V	-	Military	MIL-PRF-19500/585	Surface Mount	A, SQ-MELF	-65°C ~ 150°C
JANTX1N3647/TR DIODE GP REV 2100V 250MA S AXIAL Microchip Technology	4,119	-	RFQ	Datasheet	-	S, Axial	Tape & Reel (TR)	Active	Standard	2100 V	250mA	5 V @ 250 mA	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 21000 V	-	Military	MIL-PRF-19500/279	Through Hole	S, Axial	-65°C ~ 175°C
JANTX1N6629U DIODE GEN PURP 800V 1.4A D-5B Microsemi Corporation	4,931	-	RFQ	Datasheet	-	SQ-MELF, E	Bulk	Discontinued at Digi-Key	Standard	800 V	1.4A	1.4 V @ 1.4 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	2 µA @ 800 V	-	Military	MIL-PRF-19500/590	Surface Mount	D-5B	-65°C ~ 150°C
VS-T40HFL20S05 DIODE GEN PURP 200V 40A D-55 Vishay General Semiconductor - Diodes Division	2,295	-	RFQ	Datasheet	-	D-55 T-Module	Bulk	Active	Standard	200 V	40A	-	Fast Recovery =< 500ns, > 200mA (Io)	500 ns	100 µA @ 200 V	-	-	-	Chassis Mount	D-55	-
JANTX1N3647 DIODE GP 3KV 250MA S AXIAL Microchip Technology	2,685	-	RFQ	Datasheet	-	S, Axial	Bulk	Active	Standard	3000 V	250mA	5 V @ 250 mA	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 3000 V	-	Military	MIL-PRF-19500/279	Through Hole	S, Axial	-65°C ~ 175°C
VS-T40HF80 DIODE GEN PURP 800V 40A D-55 Vishay General Semiconductor - Diodes Division	4,538	-	RFQ	Datasheet	-	D-55 T-Module	Bulk	Active	Standard	800 V	40A	-	Standard Recovery >500ns, > 200mA (Io)	-	15 mA @ 800 V	-	-	-	Chassis Mount	D-55	-
JANTX1N6077 DIODE GEN PURP 100V 1.3A A-PAK Microchip Technology	4,636	-	RFQ	Datasheet	-	A, Axial	Bulk	Active	Standard	100 V	1.3A	1.76 V @ 18.8 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	5 µA @ 100 V	-	Military	MIL-PRF-19500/503	Through Hole	A-PAK	-65°C ~ 155°C
JANTX1N6625/TR DIODE GEN PURP 1.1KV 1A Microchip Technology	7,568	-	RFQ	Datasheet	-	A, Axial	Tape & Reel (TR)	Active	Standard	1100 V	1A	1.75 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	500 nA @ 1100 V	10pF @ 10V, 1MHz	Military	MIL-PRF-19500/585	Through Hole	A, Axial	-65°C ~ 150°C
JANTX1N6076 DIODE GEN PURP 50V 1.3A A-PAK Microchip Technology	5,932	-	RFQ	Datasheet	-	A, Axial	Bulk	Active	Standard	50 V	1.3A	1.76 V @ 18.8 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	5 µA @ 50 V	-	Military	MIL-PRF-19500/503	Through Hole	A-PAK	-65°C ~ 155°C
JANTX1N6625 DIODE GEN PURP 1.1KV 1A AXIAL Microchip Technology	4,954	-	RFQ	Datasheet	-	A, Axial	Bulk	Active	Standard	1100 V	1A	1.75 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	500 nA @ 1100 V	10pF @ 10V, 1MHz	Military	MIL-PRF-19500/585	Through Hole	A, Axial	-65°C ~ 150°C
VS-T40HF100 DIODE GEN PURP 1KV 40A D-55 Vishay General Semiconductor - Diodes Division	4,978	-	RFQ	Datasheet	-	D-55 T-Module	Bulk	Active	Standard	1000 V	40A	-	Standard Recovery >500ns, > 200mA (Io)	-	15 mA @ 1000 V	-	-	-	Chassis Mount	D-55	-
VS-T40HFL40S02 DIODE GEN PURP 400V 40A D-55 Vishay General Semiconductor - Diodes Division	8,028	-	RFQ	Datasheet	-	D-55 T-Module	Bulk	Active	Standard	400 V	40A	-	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	100 µA @ 400 V	-	-	-	Chassis Mount	D-55	-
VS-245NQ015PBF DIODE SCHOTTKY 15V 240A D-67 Vishay General Semiconductor - Diodes Division	7,205	-	RFQ	Datasheet	-	D-67 HALF-PAK	Bulk	Active	Schottky	15 V	240A	520 mV @ 240 A	Fast Recovery =< 500ns, > 200mA (Io)	-	80 mA @ 15 V	15800pF @ 5V, 1MHz	-	-	Chassis Mount	D-67 HALF-PAK	-
MBR75100R DIODE SCHOTTKY REV 100V 75A DO5 GeneSiC Semiconductor	9,941	-	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Schottky, Reverse Polarity	100 V	75A	840 mV @ 75 A	Fast Recovery =< 500ns, > 200mA (Io)	-	5 mA @ 20 V	-	-	-	Chassis, Stud Mount	DO-5	-65°C ~ 150°C
MBR7520R DIODE SCHOTTKY REV 20V 75A DO5 GeneSiC Semiconductor	2,090	-	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Schottky, Reverse Polarity	20 V	75A	650 mV @ 75 A	Fast Recovery =< 500ns, > 200mA (Io)	-	5 mA @ 20 V	-	-	-	Chassis, Stud Mount	DO-5	-65°C ~ 150°C
MBR7530R DIODE SCHOTTKY REV 30V 75A DO5 GeneSiC Semiconductor	2,630	-	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Schottky, Reverse Polarity	30 V	75A	750 mV @ 75 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 30 V	-	-	-	Chassis, Stud Mount	DO-5	-55°C ~ 150°C
MBR7535R DIODE SCHOTTKY REV 35V 75A DO5 GeneSiC Semiconductor	4,881	-	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Schottky, Reverse Polarity	35 V	75A	750 mV @ 75 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 35 V	-	-	-	Chassis, Stud Mount	DO-5	-55°C ~ 150°C
MBR7540R DIODE SCHOTTKY REV 40V 75A DO5 GeneSiC Semiconductor	6,513	-	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Schottky, Reverse Polarity	40 V	75A	650 mV @ 75 A	Fast Recovery =< 500ns, > 200mA (Io)	-	5 mA @ 20 V	-	-	-	Chassis, Stud Mount	DO-5	-65°C ~ 150°C

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Single Diodes FAQ

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Compare the manufacturer part number, electrical specifications, package, operating conditions and application requirements. The product datasheet should be used to confirm technical suitability.

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Yes. Our sourcing team can review shortage and obsolete-part requirements and help check available supply channels or possible alternatives when appropriate.

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