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Single Diodes

Browse available Single Diodes part numbers with manufacturer references, stock information, pricing, datasheets and key specifications. Use the table below to compare options for your project.

For BOM, shortage or hard-to-find requirements, send your part number and quantity to Winsun (HK) Electronics for availability, lead-time and quotation support.

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Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
JANS1N5811/TR Microchip Technology

JANS1N5811/TR

DIODE GEN PURP 150V 6A B AXIAL

Microchip Technology

2,579 -
Datasheet - B, Axial Tape & Reel (TR) Active Standard 150 V 6A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns - - Military MIL-PRF-19500/477 Through Hole B, Axial -65°C ~ 175°C
UES1306E3 Microchip Technology

UES1306E3

DIODE GEN PURP 400V 3A B AXIAL

Microchip Technology

9,650 -
Datasheet - B, Axial Bulk Active Standard 400 V 3A 1.25 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 20 µA @ 400 V - - - Through Hole B, Axial -55°C ~ 150°C
241NQ035 Vishay General Semiconductor - Diodes Division

241NQ035

DIODE SCHOTTKY 35V 240A D-67

Vishay General Semiconductor - Diodes Division

6,513 -
Datasheet - D-67 HALF-PAK Bulk Obsolete Schottky 35 V 240A 690 mV @ 240 A Fast Recovery =< 500ns, > 200mA (Io) - 20 mA @ 35 V 10300pF @ 5V, 1MHz - - Chassis Mount D-67 HALF-PAK -
JANS1N5811 Microchip Technology

JANS1N5811

DIODE GEN PURP 150V 6A B AXIAL

Microchip Technology

9,618 -
Datasheet - B, Axial Bulk Active Standard 150 V 6A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns - - Military MIL-PRF-19500/477 Through Hole B, Axial -65°C ~ 175°C
JANTXV1N4148UB Microchip Technology

JANTXV1N4148UB

DIODE GEN PURP 75V 200MA UB

Microchip Technology

2,548 -
Datasheet - 3-SMD, No Lead Bulk Discontinued at Digi-Key Standard 75 V 200mA 1.2 V @ 100 mA Small Signal =< 200mA (Io), Any Speed 20 ns 500 nA @ 75 V 4pF @ 0V, 1MHz Military MIL-PRF-19500/116 Surface Mount UB -65°C ~ 200°C
243NQ080 Vishay General Semiconductor - Diodes Division

243NQ080

DIODE SCHOTTKY 80V 240A D-67

Vishay General Semiconductor - Diodes Division

5,888 -
Datasheet - D-67 HALF-PAK Bulk Obsolete Schottky 80 V 240A 860 mV @ 240 A Fast Recovery =< 500ns, > 200mA (Io) - 6 mA @ 80 V 5500pF @ 5V, 1MHz - - Chassis Mount D-67 HALF-PAK -
DSA75-12B IXYS

DSA75-12B

DIODE AVAL 1.2KV 110A DO203AB

IXYS

3,797 -
Datasheet - DO-203AB, DO-5, Stud Box Obsolete Avalanche 1200 V 110A 1.17 V @ 150 A Standard Recovery >500ns, > 200mA (Io) - 6 mA @ 1200 V - - - Chassis, Stud Mount DO-203AB -40°C ~ 180°C
DSAI75-12B IXYS

DSAI75-12B

DIODE AVAL 1.2KV 110A DO203AB

IXYS

7,320 -
Datasheet - DO-203AB, DO-5, Stud Box Obsolete Avalanche 1200 V 110A 1.17 V @ 150 A Standard Recovery >500ns, > 200mA (Io) - 6 mA @ 1200 V - - - Chassis, Stud Mount DO-203AB -40°C ~ 180°C
JANTXV1N5807URS Microchip Technology

JANTXV1N5807URS

DIODE GEN PURP 50V 3A B SQ-MELF

Microchip Technology

7,211 -
Datasheet - SQ-MELF, B Bulk Active Standard 50 V 3A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 50 V 60pF @ 10V, 1MHz Military MIL-PRF-19500/477 Surface Mount B, SQ-MELF -65°C ~ 175°C
JANTXV1N5809URS Microchip Technology

JANTXV1N5809URS

DIODE GEN PURP 100V 3A B SQ-MELF

Microchip Technology

4,096 -
Datasheet - SQ-MELF, B Bulk Active Standard 100 V 3A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 100 V 60pF @ 10V, 1MHz Military MIL-PRF-19500/477 Surface Mount B, SQ-MELF -65°C ~ 175°C
JANTXV1N5811URS Microchip Technology

JANTXV1N5811URS

DIODE GEN PURP 150V 3A B SQ-MELF

Microchip Technology

4,849 -
Datasheet - SQ-MELF, B Bulk Active Standard 150 V 3A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 150 V 60pF @ 10V, 1MHz Military MIL-PRF-19500/477 Surface Mount B, SQ-MELF -65°C ~ 175°C
1N6076US/TR Microchip Technology

1N6076US/TR

UFR,FRR

Microchip Technology

9,954 -
Datasheet - SQ-MELF, E Tape & Reel (TR) Active Standard 50 V 1.3A 1.76 V @ 18.8 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 50 V - - - Surface Mount E-MELF -65°C ~ 155°C
1N6077US/TR Microchip Technology

1N6077US/TR

UFR,FRR

Microchip Technology

9,225 -
Datasheet - SQ-MELF, E Tape & Reel (TR) Active Standard 100 V 1.3A 1.76 V @ 18.8 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 100 V - - - Surface Mount E-MELF -65°C ~ 155°C
VS-T85HF10 Vishay General Semiconductor - Diodes Division

VS-T85HF10

DIODE GEN PURP 100V 85A D-55

Vishay General Semiconductor - Diodes Division

6,264 -
Datasheet - D-55 T-Module Bulk Active Standard 100 V 85A - Standard Recovery >500ns, > 200mA (Io) - 20 mA @ 100 V - - - Chassis Mount D-55 -
UES1306E3/TR Microchip Technology

UES1306E3/TR

DIODE GP REV 400V 3A B AXIAL

Microchip Technology

9,644 -
Datasheet - B, Axial Tape & Reel (TR) Active Standard, Reverse Polarity 400 V 3A 1.25 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 20 µA @ 400 V - - - Through Hole B, Axial -55°C ~ 150°C
JANTXV1N4148UB/TR Microchip Technology

JANTXV1N4148UB/TR

DIODE GEN PURP 75V 200MA UB

Microchip Technology

3,428 -
Datasheet - 3-SMD, No Lead Tape & Reel (TR) Active Standard 75 V 200mA 1.2 V @ 100 mA Small Signal =< 200mA (Io), Any Speed 20 ns 500 nA @ 75 V 4pF @ 0V, 1MHz Military MIL-PRF-19500/116 Surface Mount UB -65°C ~ 200°C
UES1306/TR Microchip Technology

UES1306/TR

DIODE GP REV 400V 3A B AXIAL

Microchip Technology

2,208 -
Datasheet - B, Axial Tape & Reel (TR) Active Standard, Reverse Polarity 400 V 3A 1.25 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 20 µA @ 400 V - - - Through Hole B, Axial -55°C ~ 150°C
VS-T85HF20 Vishay General Semiconductor - Diodes Division

VS-T85HF20

DIODE GEN PURP 200V 85A D-55

Vishay General Semiconductor - Diodes Division

6,759 -
Datasheet - D-55 T-Module Bulk Active Standard 200 V 85A - Standard Recovery >500ns, > 200mA (Io) - 20 mA @ 200 V - - - Chassis Mount D-55 -
UES1304E3/TR Microchip Technology

UES1304E3/TR

DIODE GEN PURP 200V 5A B AXIAL

Microchip Technology

9,168 -
Datasheet - B, Axial Tape & Reel (TR) Active Standard 200 V 5A 1.25 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns - - - - Through Hole B, Axial -55°C ~ 150°C
JANTXV1N5811URS/TR Microchip Technology

JANTXV1N5811URS/TR

UFR,FRR

Microchip Technology

7,567 -
Datasheet - SQ-MELF, B Tape & Reel (TR) Active Standard 150 V 3A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 150 V 60pF @ 10V, 1MHz Military MIL-PRF-19500/477 Surface Mount B, SQ-MELF -65°C ~ 175°C
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WINSUN SOURCING SUPPORT

Need Single Diodes Sourcing Support?

Send the manufacturer, part number, quantity and target delivery requirement. Winsun (HK) Electronics can assist with availability checks, quotation support, shortage sourcing and hard-to-find or obsolete components.

Global component sourcing support BOM, shortage and EOL support
FREQUENTLY ASKED QUESTIONS

Single Diodes FAQ

Common questions about selecting, comparing and sourcing Single Diodes components through Winsun (HK) Electronics.

What should I check when selecting Single Diodes components?

Compare the manufacturer part number, electrical specifications, package, operating conditions and application requirements. The product datasheet should be used to confirm technical suitability.

Can Winsun help source specific Single Diodes part numbers?

Yes. Send the exact part number, manufacturer and required quantity. Winsun (HK) Electronics can assist with availability checks, quotation support and sourcing options based on your requirement.

Do you support shortage, obsolete or hard-to-find Single Diodes parts?

Yes. Our sourcing team can review shortage and obsolete-part requirements and help check available supply channels or possible alternatives when appropriate.

How do I request a quote for Single Diodes components?

Submit an RFQ with the part number, manufacturer, quantity and target delivery requirement. Our sales team will review your request and follow up with current sourcing information.