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Single Diodes

Browse available Single Diodes part numbers with manufacturer references, stock information, pricing, datasheets and key specifications. Use the table below to compare options for your project.

For BOM, shortage or hard-to-find requirements, send your part number and quantity to Winsun (HK) Electronics for availability, lead-time and quotation support.

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Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
S3580 Microchip Technology

S3580

DIODE GEN PURP 800V 70A DO5

Microchip Technology

6,802 -
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard 800 V 70A 1.25 V @ 200 A Standard Recovery >500ns, > 200mA (Io) - 25 µA @ 800 V - - - Stud Mount DO-5 (DO-203AB) -65°C ~ 200°C
VS-150KS10 Vishay General Semiconductor - Diodes Division

VS-150KS10

DIODE GEN PURP 100V 150A B-42

Vishay General Semiconductor - Diodes Division

2,454 -
Datasheet - B-42 Bulk Obsolete Standard 100 V 150A 1.33 V @ 471 A Standard Recovery >500ns, > 200mA (Io) - 35 mA @ 100 V - - - Chassis, Stud Mount B-42 -40°C ~ 200°C
VS-45LR60 Vishay General Semiconductor - Diodes Division

VS-45LR60

DIODE GP REV 600V 150A DO205AC

Vishay General Semiconductor - Diodes Division

5,863 -
Datasheet - DO-205AC, DO-30, Stud Bulk Obsolete Standard, Reverse Polarity 600 V 150A 1.33 V @ 471 A Standard Recovery >500ns, > 200mA (Io) - - - - - Stud Mount DO-205AC (DO-30) -40°C ~ 200°C
R5100210XXWA Powerex Inc.

R5100210XXWA

DIODE GEN PURP 200V 100A DO205AA

Powerex Inc.

3,956 -
Datasheet - DO-205AA, DO-8, Stud Bulk Obsolete Standard 200 V 100A 1.55 V @ 470 A Standard Recovery >500ns, > 200mA (Io) 7 µs 30 mA @ 100 V - - - Chassis, Stud Mount DO-205AA (DO-8) -65°C ~ 200°C
GB50MPS17-247 GeneSiC Semiconductor

GB50MPS17-247

DIODE SIL CARB 1.7KV 216A TO247

GeneSiC Semiconductor

8,188 -
Datasheet SiC Schottky MPS™ TO-247-2 Tube Obsolete SiC (Silicon Carbide) Schottky 1700 V 216A 1.8 V @ 50 A No Recovery Time > 500mA (Io) 0 ns 60 µA @ 1700 V 3193pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
1N5809URS/TR Microchip Technology

1N5809URS/TR

UFR,FRR

Microchip Technology

3,076 -
Datasheet - SQ-MELF, B Tape & Reel (TR) Active Standard 100 V 3A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 100 V 60pF @ 10V, 1MHz - - Surface Mount B, SQ-MELF -65°C ~ 175°C
1N5811URS/TR Microchip Technology

1N5811URS/TR

UFR,FRR

Microchip Technology

4,814 -
Datasheet - SQ-MELF, B Tape & Reel (TR) Active Standard 150 V 3A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 150 V 60pF @ 10V, 1MHz - - Surface Mount B, SQ-MELF -65°C ~ 175°C
1N5807URS/TR Microchip Technology

1N5807URS/TR

UFR,FRR

Microchip Technology

4,843 -
Datasheet - SQ-MELF, B Tape & Reel (TR) Active Standard 50 V 3A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 50 V 60pF @ 10V, 1MHz - - Surface Mount B, SQ-MELF -65°C ~ 175°C
UES1106SM Microchip Technology

UES1106SM

DIODE GEN PURP 400V 2A A SQ-MELF

Microchip Technology

7,773 -
Datasheet - SQ-MELF, A Bulk Active Standard 400 V 2A 1.25 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns - - - - Surface Mount A, SQ-MELF -
UES1105SM Microchip Technology

UES1105SM

DIODE GEN PURP 300V 2A A SQ-MELF

Microchip Technology

6,336 -
Datasheet - SQ-MELF, A Bulk Active Standard 300 V 2A 1.25 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns - - - - Surface Mount A, SQ-MELF -
UES1106SM-1 Microchip Technology

UES1106SM-1

DIODE GEN PURP 400V 2A A SQ-MELF

Microchip Technology

6,362 -
Datasheet - SQ-MELF, A Bulk Active Standard 400 V 2A 1.25 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 400 V - - - Surface Mount A, SQ-MELF -55°C ~ 175°C
UES1104SM Microchip Technology

UES1104SM

DIODE GEN PURP 200V 2A A SQ-MELF

Microchip Technology

2,802 -
Datasheet - SQ-MELF, A Bulk Active Standard 200 V 2A 1 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 200 V - - - Surface Mount A, SQ-MELF -
R35120 Microchip Technology

R35120

RECTIFIER

Microchip Technology

8,925 -
Datasheet R35 DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 1200 V 70A 1.25 V @ 200 A Standard Recovery >500ns, > 200mA (Io) - 25 µA @ 1200 V - - - Stud Mount DO-203AB (DO-5) -65°C ~ 200°C
S35120 Microchip Technology

S35120

DIODE GEN PURP 1.2KV 70A DO5

Microchip Technology

2,221 -
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard 1200 V 70A 1.25 V @ 200 A Standard Recovery >500ns, > 200mA (Io) - 25 µA @ 1200 V - - - Stud Mount DO-5 (DO-203AB) -65°C ~ 200°C
1N6642UB2R Microchip Technology

1N6642UB2R

DIODE GEN PURPOSE

Microchip Technology

6,328 -
Datasheet * - Bulk Active - - - - - - - - - - - - -
UES1106SM/TR Microchip Technology

UES1106SM/TR

DIODE GEN PURP 400V 2A A SQ-MELF

Microchip Technology

6,978 -
Datasheet - SQ-MELF, A Tape & Reel (TR) Active Standard 400 V 2A 1.25 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns - - - - Surface Mount A, SQ-MELF -
UES1105SM/TR Microchip Technology

UES1105SM/TR

DIODE GEN PURP 300V 2A A SQ-MELF

Microchip Technology

5,908 -
Datasheet - SQ-MELF, A Tape & Reel (TR) Active Standard 300 V 2A 1.25 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns - - - - Surface Mount A, SQ-MELF -
UES1106SM-1/TR Microchip Technology

UES1106SM-1/TR

DIODE GEN PURP 400V 2A A SQ-MELF

Microchip Technology

6,606 -
Datasheet - SQ-MELF, A Tape & Reel (TR) Active Standard 400 V 2A 1.25 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 400 V - - - Surface Mount A, SQ-MELF -55°C ~ 175°C
70UR120D Vishay General Semiconductor - Diodes Division

70UR120D

DIODE GP 1.2KV 250A DO205AB

Vishay General Semiconductor - Diodes Division

5,306 -
Datasheet - DO-205AB, DO-9, Stud Bulk Obsolete Standard 1200 V 250A 1.3 V @ 785 A Standard Recovery >500ns, > 200mA (Io) - 60 mA @ 1200 V - - - Stud Mount DO-205AB (DO-9) -40°C ~ 200°C
GB02SHT03-46 GeneSiC Semiconductor

GB02SHT03-46

DIODE SIL CARBIDE 300V 4A TO46

GeneSiC Semiconductor

4,712 -
Datasheet - TO-206AB, TO-46-3 Metal Can Bulk Obsolete SiC (Silicon Carbide) Schottky 300 V 4A 1.6 V @ 1 A No Recovery Time > 500mA (Io) 0 ns 5 µA @ 300 V 76pF @ 1V, 1MHz - - Through Hole TO-46 -55°C ~ 225°C
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WINSUN SOURCING SUPPORT

Need Single Diodes Sourcing Support?

Send the manufacturer, part number, quantity and target delivery requirement. Winsun (HK) Electronics can assist with availability checks, quotation support, shortage sourcing and hard-to-find or obsolete components.

Global component sourcing support BOM, shortage and EOL support
FREQUENTLY ASKED QUESTIONS

Single Diodes FAQ

Common questions about selecting, comparing and sourcing Single Diodes components through Winsun (HK) Electronics.

What should I check when selecting Single Diodes components?

Compare the manufacturer part number, electrical specifications, package, operating conditions and application requirements. The product datasheet should be used to confirm technical suitability.

Can Winsun help source specific Single Diodes part numbers?

Yes. Send the exact part number, manufacturer and required quantity. Winsun (HK) Electronics can assist with availability checks, quotation support and sourcing options based on your requirement.

Do you support shortage, obsolete or hard-to-find Single Diodes parts?

Yes. Our sourcing team can review shortage and obsolete-part requirements and help check available supply channels or possible alternatives when appropriate.

How do I request a quote for Single Diodes components?

Submit an RFQ with the part number, manufacturer, quantity and target delivery requirement. Our sales team will review your request and follow up with current sourcing information.