Single Diodes

Browse available Single Diodes part numbers with manufacturer references, stock information, pricing, datasheets and key specifications. Use the table below to compare options for your project.

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
APT100DL60BG DIODE GEN PURP 600V 100A TO247 Microchip Technology	5,848	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	600 V	100A	1.6 V @ 100 A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	-	-	Through Hole	TO-247	-55°C ~ 175°C
JANTXV1N6629US DIODE GEN PURP 800V 1.4A D-5B Microsemi Corporation	3,276	-	RFQ	Datasheet	-	SQ-MELF, E	Bulk	Active	Standard	800 V	1.4A	1.4 V @ 1.4 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	2 µA @ 800 V	40pF @ 10V, 1MHz	Military	MIL-PRF-19500/590	Surface Mount	D-5B	-65°C ~ 150°C
DNA30E2200PC DIODE GEN PURP 2.2KV 30A TO263AA IXYS	4,835	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	2200 V	30A	1.26 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	40 µA @ 2200 V	7pF @ 700V, 1MHz	-	-	Surface Mount	TO-263AA	-55°C ~ 175°C
DNA30EM2200PC DIODE GEN PURP 2.2KV 30A TO263AA IXYS	4,350	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	2200 V	30A	1.26 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	40 µA @ 2200 V	7pF @ 700V, 1MHz	-	-	Surface Mount	TO-263AA	-55°C ~ 175°C
TRS6E65C,S1AQ DIODE SIL CARB 650V 6A TO220-2L Toshiba Semiconductor and Storage	5,245	-	RFQ	Datasheet	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	6A	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	90 µA @ 650 V	35pF @ 650V, 1MHz	-	-	Through Hole	TO-220-2L	175°C (Max)
TRS12E65C,S1Q DIODE SIL CARB 650V 12A TO220-2L Toshiba Semiconductor and Storage	3,177	-	RFQ	Datasheet	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	12A	1.7 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	90 µA @ 170 V	65pF @ 650V, 1MHz	-	-	Through Hole	TO-220-2L	175°C (Max)
JANTX1N6629US DIODE GEN PURP 880V 1.4A D-5B Microsemi Corporation	6,147	-	RFQ	Datasheet	-	SQ-MELF, E	Bulk	Active	Standard	880 V	1.4A	1.4 V @ 1.4 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	2 µA @ 880 V	40pF @ 10V, 1MHz	Military	MIL-PRF-19500/590	Surface Mount	D-5B	-65°C ~ 150°C
MSG105 DIODE SCHOTTKY 50V 1A DO204AL Microsemi Corporation	3,206	-	RFQ	Datasheet	-	DO-204AL, DO-41, Axial	Bulk	Active	Schottky	50 V	1A	690 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 50 V	-	-	-	Through Hole	DO-204AL (DO-41)	-65°C ~ 175°C
MSG109 DIODE SCHOTTKY 90V 1A DO204AL Microsemi Corporation	3,590	-	RFQ	Datasheet	-	DO-204AL, DO-41, Axial	Bulk	Active	Schottky	90 V	1A	810 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 90 V	-	-	-	Through Hole	DO-204AL (DO-41)	-65°C ~ 175°C
DB3Y501KEL DIODE SCHOTTKY 50V 200MA SOT23-3 Panasonic Electronic Components	6,334	-	RFQ	Datasheet	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Obsolete	Schottky	50 V	200mA	550 mV @ 200 mA	Small Signal =< 200mA (Io), Any Speed	1.6 ns	200 µA @ 50 V	4pF @ 10V, 1MHz	-	-	Surface Mount	SOT-23-3	125°C (Max)
BAS16 DIODE GEN PURP 80V 200MA SC59-3 Panasonic Electronic Components	2,899	-	RFQ	Datasheet	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Obsolete	Standard	80 V	200mA	1.25 V @ 150 mA	Small Signal =< 200mA (Io), Any Speed	3 ns	100 nA @ 80 V	1.2pF @ 0V, 1MHz	-	-	Surface Mount	SC-59-3	150°C (Max)
DB2U31600L DIODE SCHOTTKY 30V 100MA SOD923 Panasonic Electronic Components	9,495	-	RFQ	Datasheet	-	SOD-923	Tape & Reel (TR)	Obsolete	Schottky	30 V	100mA	550 mV @ 100 mA	Small Signal =< 200mA (Io), Any Speed	800 ps	15 µA @ 30 V	2pF @ 10V, 1MHz	-	-	Surface Mount	SOD-923	125°C (Max)
1N4534 DIODE GEN PURP 50V 150MA DO34 Microsemi Corporation	4,779	-	RFQ	Datasheet	-	DO-204AG, DO-34, Axial	Bulk	Active	Standard	50 V	150mA	880 mV @ 20 mA	Small Signal =< 200mA (Io), Any Speed	4 ns	50 nA @ 50 V	-	-	-	Through Hole	DO-34	-65°C ~ 175°C
DSB1A20 DIODE SCHOTTKY 20V 1A DO204AL Microchip Technology	9,411	-	RFQ	Datasheet	-	DO-204AL, DO-41, Axial	Bulk	Active	Schottky	20 V	1A	600 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 20 V	-	-	-	Through Hole	DO-204AL (DO-41)	-
DSB1A30 DIODE SCHOTTKY 30V 1A DO204AL Microchip Technology	6,717	-	RFQ	Datasheet	-	DO-204AL, DO-41, Axial	Bulk	Active	Schottky	30 V	1A	600 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 30 V	-	-	-	Through Hole	DO-204AL (DO-41)	-
DSB1A50 DIODE SCHOTTKY 50V 1A DO204AL Microchip Technology	3,352	-	RFQ	Datasheet	-	DO-204AL, DO-41, Axial	Bulk	Active	Schottky	50 V	1A	600 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 50 V	-	-	-	Through Hole	DO-204AL (DO-41)	-
DSB2810 DIODE SCHOTTKY 20V 75MA DO35 Microchip Technology	2,609	-	RFQ	Datasheet	-	DO-204AH, DO-35, Axial	Bulk	Active	Schottky	20 V	75mA	410 mV @ 1 mA	Small Signal =< 200mA (Io), Any Speed	-	100 nA @ 15 V	2pF @ 0V, 1MHz	-	-	Through Hole	DO-204AH (DO-35)	-65°C ~ 150°C
DSB3A20 DIODE SCHOTTKY 20V 3A DO204AH Microchip Technology	8,989	-	RFQ	Datasheet	-	DO-204AH, DO-35, Axial	Bulk	Active	Schottky	20 V	3A	500 mV @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 20 V	-	-	-	Through Hole	DO-204AH (DO-35)	-65°C ~ 125°C
DSB5817 DIODE SCHOTTKY DO-41 Microchip Technology	3,121	-	RFQ	Datasheet	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
DSB5818 DIODE SCHOTTKY 30V 1A DO204AL Microchip Technology	2,637	-	RFQ	Datasheet	-	DO-204AL, DO-41, Axial	Bulk	Active	Schottky	30 V	1A	600 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 nA @ 30 V	-	-	-	Through Hole	DO-204AL (DO-41)	-

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Yes. Our sourcing team can review shortage and obsolete-part requirements and help check available supply channels or possible alternatives when appropriate.

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