Single Diodes
Browse available Single Diodes part numbers with manufacturer references, stock information, pricing, datasheets and key specifications. Use the table below to compare options for your project.
For BOM, shortage or hard-to-find requirements, send your part number and quantity to Winsun (HK) Electronics for availability, lead-time and quotation support.
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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NXPSC16650B6JDIODE SIL CARBIDE 650V 16A D2PAK |
3,106 | - |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 16A | 1.7 V @ 16 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 534pF @ 1V, 1MHz | - | - | Surface Mount | D2PAK | 175°C (Max) |
|
WNSC04650T6JDIODE SIL CARBIDE 650V 4A 5DFN |
4,442 | - |
|
Datasheet | - | 4-VSFN Exposed Pad | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 4A | 1.7 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 25 µA @ 650 V | 141pF @ 1V, 1MHz | - | - | Surface Mount | 5-DFN (8x8) | 175°C (Max) |
|
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NXPSC12650B6JDIODE SIL CARBIDE 650V 12A D2PAK |
2,892 | - |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.7 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 80 µA @ 650 V | 380pF @ 1V, 1MHz | - | - | Surface Mount | D2PAK | 175°C (Max) |
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WNSC10650T6JDIODE SIL CARBIDE 650V 10A 5DFN |
7,135 | - |
|
Datasheet | - | 4-VSFN Exposed Pad | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 650 V | 328pF @ 1V, 1MHz | - | - | Surface Mount | 5-DFN (8x8) | 175°C (Max) |
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WNSC08650T6JDIODE SIL CARBIDE 650V 8A 5DFN |
8,999 | - |
|
Datasheet | - | 4-VSFN Exposed Pad | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 267pF @ 1V, 1MHz | - | - | Surface Mount | 5-DFN (8x8) | 175°C (Max) |
|
VS-C20CP07L-M3DIODE SIL CARB 650V 10A TO220AC |
5,592 | - |
|
Datasheet | - | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.8 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 55 µA @ 650 V | 430pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
VS-C16CP07L-M3DIODE SIL CARB 650V 16A TO220AC |
6,963 | - |
|
Datasheet | - | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 16A | 1.7 V @ 16 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 85 µA @ 650 V | 320pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
SM4001-CTDIODE GP 50V 1A MELF DO-213AB |
8,040 | - |
|
Datasheet | - | DO-213AB, MELF | Strip | Active | Standard | 50 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 5 µA @ 50 V | - | - | - | Surface Mount | DO-213AB (MELF) | -50°C ~ 175°C |
|
P2500X-CTDIODE AVALANCHE 1.8KV 25A P600 |
9,312 | - |
|
Datasheet | - | P600, Axial | Strip | Active | Avalanche | 1800 V | 25A | 1.1 V @ 25 A | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 10 µA @ 1.8 V | - | - | - | Through Hole | P600 | -55°C ~ 175°C |
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1N4005GP-AQ-CTDIODE GEN PURP 600V 1A DO41 |
4,442 | - |
|
Datasheet | - | DO-204AC, DO-41, Axial | Strip | Active | Standard | 600 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 5 µA @ 600 V | - | - | - | Through Hole | DO-204AC (DO-41) | -50°C ~ 175°C |
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SM5406-CTDIODE GP 600V 3A MELF DO-213AB |
8,271 | - |
|
Datasheet | - | DO-213AB, MELF | Strip | Active | Standard | 600 V | 3A | 1.2 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 5 µA @ 600 V | - | - | - | Surface Mount | DO-213AB (MELF) | -50°C ~ 175°C |
|
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SM4007-CTDIODE GP 1KV 1A MELF DO-213AB |
2,031 | - |
|
Datasheet | - | DO-213AB, MELF | Strip | Active | Standard | 1000 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 5 µA @ 1 V | - | - | - | Surface Mount | DO-213AB (MELF) | -50°C ~ 175°C |
|
BY550-50-CTDIODE GEN PURP 50V 5A DO201 |
7,342 | - |
|
Datasheet | - | DO-201AA, DO-27, Axial | Strip | Active | Standard | 50 V | 5A | 1 V @ 5 A | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 5 µA @ 50 V | - | - | - | Through Hole | DO-201 | -50°C ~ 175°C |
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SM4003-CTDIODE GP 200V 1A MELF DO-213AB |
4,618 | - |
|
Datasheet | - | DO-213AB, MELF | Strip | Active | Standard | 200 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 5 µA @ 200 V | - | - | - | Surface Mount | DO-213AB (MELF) | -50°C ~ 175°C |
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P600G-CTDIODE GEN PURP 400V 6A P600 |
7,066 | - |
|
Datasheet | - | P600, Axial | Strip | Active | Standard | 400 V | 6A | 1.1 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 10 µA @ 400 V | - | - | - | Through Hole | P600 | -50°C ~ 150°C |
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SM4002-CTDIODE GP 100V 1A MELF DO-213AB |
3,475 | - |
|
Datasheet | - | DO-213AB, MELF | Strip | Active | Standard | 100 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 5 µA @ 100 V | - | - | - | Surface Mount | DO-213AB (MELF) | -50°C ~ 175°C |
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GL34B-CTDIODE GP 100V 500MA DO213AA |
2,178 | - |
|
Datasheet | - | DO-213AA | Strip | Active | Standard | 100 V | 500mA | 1.2 V @ 500 mA | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 5 µA @ 100 V | - | - | - | Surface Mount | DO-213AA (MINIMELF) | -50°C ~ 175°C |
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P600B-CTDIODE GEN PURP 100V 6A P600 |
6,465 | - |
|
Datasheet | - | P600, Axial | Strip | Active | Standard | 100 V | 6A | 1.1 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 10 µA @ 100 V | - | - | - | Through Hole | P600 | -50°C ~ 175°C |
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BY550-200-CTDIODE GEN PURP 200V 5A DO201 |
7,792 | - |
|
Datasheet | - | DO-201AA, DO-27, Axial | Strip | Active | Standard | 200 V | 5A | 1 V @ 5 A | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 5 µA @ 200 V | - | - | - | Through Hole | DO-201 | -50°C ~ 175°C |
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BY133-CTDIODE GEN PURP 1.3KV 1A DO41 |
9,567 | - |
|
Datasheet | - | DO-204AC, DO-41, Axial | Strip | Active | Standard | 1300 V | 1A | 1.3 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 5 µA @ 1.3 V | - | - | - | Through Hole | DO-204AC (DO-41) | -50°C ~ 175°C |
Single Diodes FAQ
Common questions about selecting, comparing and sourcing Single Diodes components through Winsun (HK) Electronics.
What should I check when selecting Single Diodes components?
Compare the manufacturer part number, electrical specifications, package, operating conditions and application requirements. The product datasheet should be used to confirm technical suitability.
Can Winsun help source specific Single Diodes part numbers?
Yes. Send the exact part number, manufacturer and required quantity. Winsun (HK) Electronics can assist with availability checks, quotation support and sourcing options based on your requirement.
Do you support shortage, obsolete or hard-to-find Single Diodes parts?
Yes. Our sourcing team can review shortage and obsolete-part requirements and help check available supply channels or possible alternatives when appropriate.
How do I request a quote for Single Diodes components?
Submit an RFQ with the part number, manufacturer, quantity and target delivery requirement. Our sales team will review your request and follow up with current sourcing information.
