Single Diodes

Browse available Single Diodes part numbers with manufacturer references, stock information, pricing, datasheets and key specifications. Use the table below to compare options for your project.

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
STPSC8H065BY-TR DIODE SIL CARBIDE 650V 8A DPAK STMicroelectronics	4,209	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	8A	-	No Recovery Time > 500mA (Io)	0 ns	80 µA @ 650 V	414pF @ 0V, 1MHz	Automotive	AEC-Q101	Surface Mount	DPAK	-40°C ~ 175°C
STPSC10065GY-TR DIODE SIL CARBIDE 650V 10A D2PAK STMicroelectronics	621	-	RFQ	Datasheet	ECOPACK®2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.45 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	130 µA @ 650 V	670pF @ 0V, 1MHz	Automotive	AEC-Q101	Surface Mount	D2PAK	-40°C ~ 175°C
FFSM0465A DIODE SIL CARBIDE 650V 4A 4PQFN onsemi	4,028	-	RFQ	Datasheet	-	4-PowerTSFN	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	4A	1.75 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	247pF @ 1V, 100kHz	-	-	Surface Mount	4-PQFN (8x8)	-55°C ~ 175°C
VS-35APF06LHM3 DIODE GEN PURP 600V 35A TO247AD Vishay General Semiconductor - Diodes Division	487	-	RFQ	Datasheet	-	TO-3P-3, SC-65-3	Tube	Active	Standard	600 V	35A	1.46 V @ 35 A	Fast Recovery =< 500ns, > 200mA (Io)	160 ns	100 µA @ 600 V	-	Automotive	AEC-Q101	Through Hole	TO-247AD (TO-3P)	-40°C ~ 150°C
RFUH20TF6SC9 DIODE GEN PURP 600V 20A TO220NFM Rohm Semiconductor	932	-	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	Standard	600 V	20A	2.8 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 600 V	-	-	-	Through Hole	TO-220NFM	150°C
FFSB1065B DIODE SIL CARB 650V 27A D2PAK-2 onsemi	686	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	27A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	421pF @ 1V, 100kHz	-	-	Surface Mount	TO-263 (D2PAK)	-55°C ~ 175°C
IDK05G120C5XTMA1 DIODE SIC 1.2KV 19.1A TO263-1 Infineon Technologies	955	-	RFQ	Datasheet	CoolSiC™+	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	19.1A	1.8 V @ 5 A	No Recovery Time > 500mA (Io)	-	33 µA @ 1200 V	301pF @ 1V, 1MHz	-	-	Surface Mount	PG-TO263-2-1	-55°C ~ 175°C
STPSC8H065DLF DIODE SIL CARB 650V 8A POWERFLAT STMicroelectronics	5,264	-	RFQ	Datasheet	ECOPACK®2	8-PowerVDFN	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.55 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	80 µA @ 650 V	460pF @ 0V, 1MHz	-	-	Surface Mount	PowerFlat™ (8x8) HV	-40°C ~ 175°C
DSEI12-12AZ-TUB DIODE GEN PURP 1.2KV 11A TO263HV IXYS	1,270	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	Standard	1200 V	11A	2.6 V @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	250 µA @ 1200 V	6pF @ 600V, 1MHz	-	-	Surface Mount	TO-263HV	-40°C ~ 150°C
SCS304AJTLL DIODE SIL CARBIDE 650V 4A LPTL Rohm Semiconductor	974	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Not For New Designs	SiC (Silicon Carbide) Schottky	650 V	4A	1.5 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 650 V	200pF @ 1V, 1MHz	-	-	Surface Mount	LPTL	175°C (Max)
S3D10065I DIODE SIL CARB 650V 10A TO220 SMC Diode Solutions	125	-	RFQ	Datasheet	-	TO-220-2 Isolated Tab	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 650 V	621pF @ 0V, 1MHz	-	-	Through Hole	TO-220-Isolation	-55°C ~ 175°C
VS-E5PH6006LHN3 DIODE GEN PURP 600V 60A TO247AD Vishay General Semiconductor - Diodes Division	183	-	RFQ	Datasheet	FRED Pt®	TO-247-2	Tube	Active	Standard	600 V	60A	1.7 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	54 ns	25 µA @ 600 V	-	Automotive	AEC-Q101	Through Hole	TO-247AD	-55°C ~ 175°C
S3D10065D1 DIODE SIL CARB 650V 10A TO247AD SMC Diode Solutions	215	-	RFQ	Datasheet	-	TO-247-3	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 650 V	621pF @ 0V, 1MHz	-	-	Through Hole	TO-247AD	-55°C ~ 175°C
CDLL5818 DIODE SCHOTTKY 30V 1A DO213AB Microchip Technology	190	-	RFQ	Datasheet	-	DO-213AB, MELF	Bulk	Active	Schottky	30 V	1A	600 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 30 V	0.9pF @ 5V, 1MHz	-	-	Surface Mount	DO-213AB	-65°C ~ 150°C
VS-45APS12LHM3 DIODE GEN PURP 1.2KV 45A TO247AD Vishay General Semiconductor - Diodes Division	179	-	RFQ	Datasheet	-	TO-3P-3, SC-65-3	Tube	Active	Standard	1200 V	45A	1.14 V @ 45 A	Standard Recovery >500ns, > 200mA (Io)	-	100 µA @ 1200 V	-	Automotive	AEC-Q101	Through Hole	TO-247AD (TO-3P)	-40°C ~ 150°C
VS-3C06ET07S2L-M3 650 V POWER SIC GEN 3 MERGED PIN Vishay General Semiconductor - Diodes Division	1,541	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	6A	1.5 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	35 µA @ 650 V	255pF @ 1V, 1MHz	-	-	Surface Mount	TO-263AB (D2PAK)	-55°C ~ 175°C
VS-45APS16LHM3 DIODES - TO-247-E3 Vishay General Semiconductor - Diodes Division	642	-	RFQ	Datasheet	-	TO-3P-3, SC-65-3	Tube	Active	Standard	1600 V	45A	1.16 V @ 45 A	Standard Recovery >500ns, > 200mA (Io)	-	100 µA @ 1600 V	-	Automotive	AEC-Q101	Through Hole	TO-247AD (TO-3P)	-40°C ~ 150°C
S4D10120F DIODE SIC 1.2KV 10A ITO220AC SMC Diode Solutions	788	-	RFQ	Datasheet	-	TO-220-2 Full Pack, Isolated Tab	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	10A	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	772pF @ 0V, 1MHz	-	-	Through Hole	ITO-220AC	-55°C ~ 175°C
FFSM0665A DIODE SIL CARBIDE 650V 8A 4PQFN onsemi	2,860	-	RFQ	Datasheet	-	4-PowerTSFN	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.75 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	365pF @ 1V, 100kHz	-	-	Surface Mount	4-PQFN (8x8)	-55°C ~ 175°C
FFSB0665B-F085 DIODE SIL CARB 650V 8A D2PAK-2 onsemi	910	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	259pF @ 1V, 100kHz	-	-	Surface Mount	TO-263 (D2PAK)	-55°C ~ 175°C

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