Single Diodes

Browse available Single Diodes part numbers with manufacturer references, stock information, pricing, datasheets and key specifications. Use the table below to compare options for your project.

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
SDS065J050H3-ISATH DIODE 650V-50A TO247-2L Luminus Devices Inc.	148	-	RFQ	Datasheet	Sanan TO247	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	114A	1.5 V @ 50 A	No Recovery Time > 500mA (Io)	0 ns	120 µA @ 650 V	2970pF @ 0V, 1MHz	-	-	Through Hole	TO-247-2L	-55°C ~ 175°C
VS-80APF06-M3 DIODE GEN PURP 600V 80A TO247AC Vishay General Semiconductor - Diodes Division	289	-	RFQ	Datasheet	-	TO-247-3	Tube	Active	Standard	600 V	80A	1.25 V @ 80 A	Fast Recovery =< 500ns, > 200mA (Io)	190 ns	100 µA @ 600 V	-	-	-	Through Hole	TO-247AC	-40°C ~ 150°C
VS-85HF40M8 DIODE GEN PURP 400V 85A DO203AB Vishay General Semiconductor - Diodes Division	152	-	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard	400 V	85A	1.2 V @ 267 A	Standard Recovery >500ns, > 200mA (Io)	-	9 mA @ 400 V	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-65°C ~ 180°C
STPSC30G12WL 1200 V, 20 A HIGH SURGE SILICON STMicroelectronics	166	-	RFQ	Datasheet	-	-	Tube	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
1N5822 SCHOTTKY DO201 40V 3A 150C Microchip Technology	131	-	RFQ	Datasheet	-	B, Axial	Bulk	Active	Schottky	40 V	3A	500 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 40 V	-	-	-	Through Hole	B, Axial	-65°C ~ 125°C
GP12022-BP STANDARD RECTIFIER 2200V 120A TO Micro Commercial Co	1,777	-	RFQ	Datasheet	-	TO-264-2	Tape & Reel (TR)	Active	Standard	2200 V	120A	1.31 V @ 120 A	Standard Recovery >500ns, > 200mA (Io)	-	100 µA @ 2200 V	-	-	-	Through Hole	TO-264P	-55°C ~ 150°C
STPSC40G12WL 1200 V, 20 A HIGH SURGE SILICON STMicroelectronics	200	-	RFQ	Datasheet	-	-	Tube	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
E6D40065G DIODE SIC 650V 131A TO263 Wolfspeed, Inc.	1,042	-	RFQ	Datasheet	E	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Last Time Buy	SiC (Silicon Carbide) Schottky	650 V	131A	1.5 V @ 40 A	No Recovery Time > 500mA (Io)	0 ns	150 µA @ 650 V	2485pF @ 0V, 1MHz	-	-	Surface Mount	TO-263-2	-55°C ~ 175°C
SDS170J025H5-ISATH DIODE 1700V-25A TO247-2L Luminus Devices Inc.	150	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	-	1700 V	25A	-	-	-	-	-	-	-	Through Hole	TO-247-2L	-
SDS120J040H3-ISATH DIODE 1200V-40A TO247-2L Luminus Devices Inc.	135	-	RFQ	Datasheet	Sanan TO247	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	98A	1.6 V @ 40 A	No Recovery Time > 500mA (Io)	0 ns	96 µA @ 1200 V	2648pF @ 0V, 1MHz	-	-	Through Hole	TO-247-2L	-55°C ~ 175°C
STPSC30G12WLY AUTOMOTIVE 1200 V, 30 A SILICON STMicroelectronics	115	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	30A	1.5 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	225 µA @ 1200 V	2272pF @ 0V, 1MHz	Automotive	AEC-Q101	Through Hole	DO-247 LL	-55°C ~ 175°C
SDS120J050H3-ISATH DIODE 1200V-50A TO247-2L Luminus Devices Inc.	145	-	RFQ	Datasheet	Sanan TO247	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	145A	1.5 V @ 50 A	No Recovery Time > 500mA (Io)	0 ns	120 µA @ 1200 V	4547pF @ 0V, 1MHz	-	-	Through Hole	TO-247-2L	-55°C ~ 175°C
STPSC40G12WLY AUTOMOTIVE 1200 V, 40A POWER SCH STMicroelectronics	200	-	RFQ	Datasheet	-	-	Tube	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
IDWD25G200C5XKSA1 SIC DISCRETE Infineon Technologies	240	-	RFQ	Datasheet	CoolSiC™	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	2000 V	77A	1.75 V @ 25 A	No Recovery Time > 500mA (Io)	0 ns	375 µA @ 2 kV	2850pF @ 1V, 100kHz	-	-	Through Hole	PG-TO247-2-U01	-55°C ~ 175°C
NDSH50120C-F155 SIC DIODE GEN2.0 1200V TO247-2L onsemi	439	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	53A	1.75 V @ 50 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	3691pF @ 1V, 100kHz	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
IDWD40G200C5XKSA1 SIC DISCRETE Infineon Technologies	240	-	RFQ	Datasheet	CoolSiC™	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	2000 V	114A	1.75 V @ 40 A	No Recovery Time > 500mA (Io)	0 ns	600 µA @ 2 kV	4550pF @ 1V, 100kHz	-	-	Through Hole	PG-TO247-2-U01	-55°C ~ 175°C
IDWD50G200C5XKSA1 SIC DISCRETE Infineon Technologies	240	-	RFQ	Datasheet	CoolSiC™	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	2000 V	140A	1.75 V @ 50 A	No Recovery Time > 500mA (Io)	0 ns	750 µA @ 2 kV	5700pF @ 1V, 100kHz	-	-	Through Hole	PG-TO247-2-U01	-55°C ~ 175°C
IDYH80G200C5XKSA1 SIC DISCRETE Infineon Technologies	240	-	RFQ	Datasheet	CoolSiC™	TO-247-4 Variant	Tube	Active	SiC (Silicon Carbide) Schottky	2000 V	157A	1.75 V @ 80 A	-	-	1.2 A @ 2000 V	9100pF @ 1V, 100kHz	-	-	Through Hole	PG-TO247-U04	-55°C ~ 175°C
IDWD80G200C5XKSA1 SIC DISCRETE Infineon Technologies	240	-	RFQ	Datasheet	CoolSiC™	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	2000 V	214A	1.75 V @ 80 A	No Recovery Time > 500mA (Io)	0 ns	1.2 mA @ 2 kV	9100pF @ 1V, 100kHz	-	-	Through Hole	PG-TO247-2-U01	-55°C ~ 175°C
JANTX1N3891 DIODE GEN PURP 200V 12A DO203AA Microchip Technology	96	-	RFQ	Datasheet	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard	200 V	12A	1.5 V @ 38 A	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	10 µA @ 200 V	-	Military	MIL-PRF-19500/304	Stud Mount	DO-203AA	-65°C ~ 175°C

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Single Diodes FAQ

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What should I check when selecting Single Diodes components?

Compare the manufacturer part number, electrical specifications, package, operating conditions and application requirements. The product datasheet should be used to confirm technical suitability.

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Yes. Send the exact part number, manufacturer and required quantity. Winsun (HK) Electronics can assist with availability checks, quotation support and sourcing options based on your requirement.

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Yes. Our sourcing team can review shortage and obsolete-part requirements and help check available supply channels or possible alternatives when appropriate.

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