Single Diodes
Browse available Single Diodes part numbers with manufacturer references, stock information, pricing, datasheets and key specifications. Use the table below to compare options for your project.
For BOM, shortage or hard-to-find requirements, send your part number and quantity to Winsun (HK) Electronics for availability, lead-time and quotation support.
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
PAD5DFN 8L ROHSDIODE GEN PURP 30V 10MA 8DFN |
6,078 | - |
|
Datasheet | PAD-DFN | 8-VFDFN Exposed Pad | Tape & Reel (TR) | Active | Standard | 30 V | 10mA | 1.5 V @ 5 mA | Small Signal =< 200mA (Io), Any Speed | - | 5 pA @ 20 V | 1.5pF @ 5V, 1MHz | - | - | Surface Mount | 8-DFN (2x2) | -55°C ~ 150°C |
|
WNSC6D20650B6JDIODE SIL CARBIDE 650V 20A D2PAK |
4,518 | - |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.55 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 80 µA @ 650 V | 780pF @ 1V, 1MHz | - | - | Surface Mount | D2PAK | 175°C |
|
S4D20120GDIODE SIL CARB 1.2KV 20A D2PAK |
388 | - |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 20A | 1.8 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 721pF @ 0V, 1MHz | - | - | Surface Mount | D2PAK | -55°C ~ 175°C |
|
1N483BDIODE GEN PURP 80V 200MA DO35 |
12,654 | - |
|
Datasheet | - | DO-204AH, DO-35, Axial | Bulk | Active | Standard | 80 V | 200mA | 1 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | - | 25 nA @ 60 V | - | - | - | Through Hole | DO-35 | 175°C (Max) |
|
S4D10120HDIODE SIL CARB 1.2KV 10A TO247AC |
507 | - |
|
Datasheet | - | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 1200 V | 772pF @ 0V, 1MHz | - | - | Through Hole | TO-247AC | -55°C ~ 175°C |
|
|
NXPSC10650QDIODE SIL CARB 650V 10A TO220AC |
1,916 | - |
|
Datasheet | - | TO-220-2 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 250 µA @ 650 V | 300pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C (Max) |
|
PCFF75H60FRECTIFIER WAFER DIE |
2,240 | - |
|
Datasheet | - | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IV1D12005O2DIODE SIL CARB 1.2KV 17A TO220-2 |
164 | - |
|
Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 17A | 1.8 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 1200 V | 320pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
GD30MPS06JDIODE SIL CARB 650V 51A TO263-7 |
540 | - |
|
Datasheet | SiC Schottky MPS™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 51A | - | No Recovery Time > 500mA (Io) | - | - | 735pF @ 1V, 1MHz | - | - | Surface Mount | TO-263-7 | -55°C ~ 175°C |
|
WNSC2D151200WQDIODE SIL CARB 1.2KV 15A TO247-2 |
4,589 | - |
|
Datasheet | - | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 15A | 1.7 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 150 µA @ 1200 V | 700pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | 175°C |
|
|
VS-80EBU04DIODE GEN PURP 400V 80A POWIRTAB |
234 | - |
|
Datasheet | FRED Pt® | PowerTab™, PowIRtab™ | Bulk | Obsolete | Standard | 400 V | 80A | 1.3 V @ 80 A | Standard Recovery >500ns, > 200mA (Io) | - | 50 µA @ 400 V | - | - | - | Chassis Mount | PowIRtab™ | - |
|
S4D20120ADIODE SIL CARB 1.2KV 20A TO220AC |
1,043 | - |
|
Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 20A | 1.8 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 1200 V | 721pF @ 0V, 1MHz | - | - | Through Hole | TO-220AC (TO-220-2) | -55°C ~ 175°C |
|
NDSH10120C-F155SIC DIODE GEN2.0 1200V TO247-2L |
450 | - |
|
Datasheet | - | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 12A | 1.75 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 680pF @ 1V, 100kHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
NXPSC166506QDIODE SIL CARB 650V 16A TO220AC |
3,003 | - |
|
Datasheet | - | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 16A | 1.7 V @ 16 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 534pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C (Max) |
|
PAD5 TO-72 3LDIODE GEN PURP 45V 50MA TO72-3 |
771 | - |
|
Datasheet | PAD | TO-72-3 Metal Can | Bulk | Active | Standard | 45 V | 50mA | 1.5 V @ 5 mA | Small Signal =< 200mA (Io), Any Speed | - | 5 pA @ 20 V | 0.5pF @ 5V, 1MHz | - | - | Through Hole | TO-72-3 | -55°C ~ 150°C |
|
NXPSC10650D6JDIODE SIL CARBIDE 650V 10A DPAK |
7,204 | - |
|
Datasheet | - | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 250 µA @ 650 V | 300pF @ 1V, 1MHz | - | - | Surface Mount | DPAK | 175°C (Max) |
|
1N3070DIODE GEN PURP 200V 500MA DO35 |
3,990 | - |
|
Datasheet | - | DO-204AH, DO-35, Axial | Bulk | Obsolete | Standard | 200 V | 500mA | 1 V @ 100 mA | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 100 nA @ 175 V | 5pF @ 0V, 1MHz | - | - | Through Hole | DO-204AH (DO-35) | 175°C (Max) |
|
RURG8040DIODE AVALANCHE 400V 80A TO247-2 |
7,789 | - |
|
Datasheet | - | TO-247-2 | Bulk | Active | Avalanche | 400 V | 80A | 1.6 V @ 80 A | Fast Recovery =< 500ns, > 200mA (Io) | 85 ns | 500 µA @ 400 V | - | - | - | Through Hole | TO-247-2 | -65°C ~ 175°C |
|
1N6643USDIODE GEN PURP 50V 300MA D-5B |
129 | - |
|
Datasheet | - | SQ-MELF, E | Bulk | Active | Standard | 50 V | 300mA | 1.2 V @ 100 mA | Fast Recovery =< 500ns, > 200mA (Io) | 20 ns | 50 nA @ 50 V | 5pF @ 0V, 1MHz | - | - | Surface Mount | D-5B | -65°C ~ 175°C |
|
RURU15040RA150A, 400V ULTRAFAST DIODE |
420 | - |
|
Datasheet | * | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
Single Diodes FAQ
Common questions about selecting, comparing and sourcing Single Diodes components through Winsun (HK) Electronics.
What should I check when selecting Single Diodes components?
Compare the manufacturer part number, electrical specifications, package, operating conditions and application requirements. The product datasheet should be used to confirm technical suitability.
Can Winsun help source specific Single Diodes part numbers?
Yes. Send the exact part number, manufacturer and required quantity. Winsun (HK) Electronics can assist with availability checks, quotation support and sourcing options based on your requirement.
Do you support shortage, obsolete or hard-to-find Single Diodes parts?
Yes. Our sourcing team can review shortage and obsolete-part requirements and help check available supply channels or possible alternatives when appropriate.
How do I request a quote for Single Diodes components?
Submit an RFQ with the part number, manufacturer, quantity and target delivery requirement. Our sales team will review your request and follow up with current sourcing information.