Single Diodes

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
VS-16FR120M DIODE GP REV 1.2KV 16A DO203AA Vishay General Semiconductor - Diodes Division	56	-	RFQ	Datasheet	-	DO-203AA, DO-4, Stud	Box	Active	Standard, Reverse Polarity	1200 V	16A	1.23 V @ 50 A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	-	-	Chassis, Stud Mount	DO-203AA (DO-4)	-65°C ~ 175°C
1N6621US DIODE GEN PURP 440V 1.2A A-MELF Microchip Technology	38	-	RFQ	Datasheet	-	SQ-MELF, A	Bulk	Active	Standard	440 V	1.2A	1.4 V @ 1.2 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	500 nA @ 440 V	10pF @ 10V, 1MHz	-	-	Surface Mount	A-MELF	-65°C ~ 150°C
VS-1N2131A DIODE GEN PURP 200V 60A DO203AB Vishay General Semiconductor - Diodes Division	71	-	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard	200 V	60A	1.3 V @ 188 A	Standard Recovery >500ns, > 200mA (Io)	-	10 mA @ 200 V	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-65°C ~ 200°C
VS-70HFL80S05 DIODE GEN PURP 800V 70A DO203AB Vishay General Semiconductor - Diodes Division	72	-	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard	800 V	70A	1.85 V @ 219.8 A	Fast Recovery =< 500ns, > 200mA (Io)	500 ns	100 µA @ 800 V	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-40°C ~ 125°C
VS-70HFR100 DIODE GEN PURP 1KV 70A DO203AB Vishay General Semiconductor - Diodes Division	45	-	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard, Reverse Polarity	1000 V	70A	1.35 V @ 220 A	Standard Recovery >500ns, > 200mA (Io)	-	9 mA @ 1000 V	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-65°C ~ 180°C
VS-70HF140 DIODE GEN PURP 1.4KV 70A DO203AB Vishay General Semiconductor - Diodes Division	73	-	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard	1400 V	70A	1.46 V @ 220 A	Standard Recovery >500ns, > 200mA (Io)	-	4.5 mA @ 1400 V	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-65°C ~ 150°C
VS-70HF160 DIODE GEN PURP 1.6KV 70A DO203AB Vishay General Semiconductor - Diodes Division	50	-	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard	1600 V	70A	1.46 V @ 220 A	Standard Recovery >500ns, > 200mA (Io)	-	4.5 mA @ 1600 V	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-65°C ~ 150°C
VS-70HFLR60S02 DIODE GP REV 600V 70A DO203AB Vishay General Semiconductor - Diodes Division	72	-	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard, Reverse Polarity	600 V	70A	1.85 V @ 219.8 A	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	100 µA @ 600 V	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-40°C ~ 125°C
GP3D020A170B DIODE SIL CARB 1.7KV 67A TO247-2 SemiQ	39	-	RFQ	Datasheet	Amp+™	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1700 V	67A	1.65 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	80 µA @ 1700 V	1403pF @ 1V, 1MHz	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
VS-85HFR120 DIODE GEN PURP 1.2KV 85A DO203AB Vishay General Semiconductor - Diodes Division	70	-	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard, Reverse Polarity	1200 V	85A	1.2 V @ 267 A	Standard Recovery >500ns, > 200mA (Io)	-	9 mA @ 1200 V	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-65°C ~ 180°C
DSEI120-12AZ-TUB DIODE GP 1.2KV 109A TO268AA IXYS	54	-	RFQ	Datasheet	-	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	Standard	1200 V	109A	1.8 V @ 70 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	3 mA @ 1200 V	-	-	-	Surface Mount	TO-268AA	-40°C ~ 150°C
VS-70HFL60S02 DIODE GEN PURP 600V 70A DO203AB Vishay General Semiconductor - Diodes Division	37	-	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard	600 V	70A	1.85 V @ 219.8 A	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	100 µA @ 600 V	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-40°C ~ 125°C
VS-85HFLR60S02 DIODE GP REV 600V 85A DO203AB Vishay General Semiconductor - Diodes Division	8	-	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard, Reverse Polarity	600 V	85A	1.75 V @ 266.9 A	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	100 µA @ 600 V	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-40°C ~ 125°C
MBR3560R DIODE SCHOTTKY REV 60V 35A DO4 GeneSiC Semiconductor	30	-	RFQ	Datasheet	-	DO-203AA, DO-4, Stud	Bulk	Active	Schottky, Reverse Polarity	60 V	35A	750 mV @ 35 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.5 mA @ 20 V	-	-	-	Chassis, Stud Mount	DO-4	-55°C ~ 150°C
MSC030SDA120BCT DIODE SIL CARB 1.2KV 65A TO247-3 Microchip Technology	24	-	RFQ	Datasheet	-	TO-247-3	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	65A	1.8 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	141pF @ 400V, 1MHz	-	-	Through Hole	TO-247-3	-55°C ~ 175°C
VS-120NQ045PBF DIODE SCHOTTKY 45V 120A D-67 Vishay General Semiconductor - Diodes Division	37	-	RFQ	Datasheet	-	D-67 HALF-PAK	Bulk	Active	Schottky	45 V	120A	630 mV @ 120 A	Fast Recovery =< 500ns, > 200mA (Io)	-	10 mA @ 45 V	5200pF @ 5V, 1MHz	-	-	Chassis Mount	D-67 HALF-PAK	-
UES1306 DIODE GEN PURP 400V 3A AXIAL Microchip Technology	45	-	RFQ	Datasheet	-	B, Axial	Bulk	Active	Standard	400 V	3A	1.25 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	20 µA @ 400 V	-	-	-	Through Hole	B, Axial	-55°C ~ 150°C
1N6098 DIODE SCHOTTKY 40V 50A DO5 GeneSiC Semiconductor	74	-	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Schottky	40 V	50A	700 mV @ 50 A	Fast Recovery =< 500ns, > 200mA (Io)	-	5 mA @ 30 V	-	-	-	Chassis, Stud Mount	DO-5	-65°C ~ 150°C
MSC030SDA170B DIODE SIL CARB 1.7KV 82A TO247 Microchip Technology	44	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1700 V	82A	1.8 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1700 V	2070pF @ 1V, 1MHz	-	-	Through Hole	TO-247	-55°C ~ 175°C
VS-242NQ030PBF DIODE SCHOTTKY 30V 240A D-67 Vishay General Semiconductor - Diodes Division	21	-	RFQ	Datasheet	-	D-67 HALF-PAK	Bulk	Active	Schottky	30 V	240A	540 mV @ 240 A	Fast Recovery =< 500ns, > 200mA (Io)	-	20 mA @ 30 V	14800pF @ 5V, 1MHz	-	-	Chassis Mount	D-67 HALF-PAK	-

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