Single Diodes

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
TRS2E65F,S1Q DIODE SIL CARB 650V 2A TO220-2L Toshiba Semiconductor and Storage	23	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	2A	1.6 V @ 2 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 650 V	8.7pF @ 650V, 1MHz	-	-	Through Hole	TO-220-2L	175°C (Max)
BYW29-100-E3/45 DIODE GEN PURP 100V 8A TO220AC Vishay General Semiconductor - Diodes Division	6,024	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	Standard	100 V	8A	1.3 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	10 µA @ 100 V	45pF @ 4V, 1MHz	-	-	Through Hole	TO-220AC	-65°C ~ 150°C
SDUR30Q60W DIODE GEN PURP 600V 30A TO247AC SMC Diode Solutions	11	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	600 V	30A	1.8 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	40 ns	10 µA @ 600 V	-	-	-	Through Hole	TO-247AC	-55°C ~ 150°C
RFV12TJ6SGC9 DIODE GP 600V 12A TO220ACFP Rohm Semiconductor	8,057	-	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	Standard	600 V	12A	2.8 V @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	45 ns	10 µA @ 600 V	-	-	-	Through Hole	TO-220ACFP	150°C
VI30100S-E3/4W DIODE SCHOTTKY 100V 30A TO262AA Vishay General Semiconductor - Diodes Division	4,214	-	RFQ	Datasheet	TMBS®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Active	Schottky	100 V	30A	910 mV @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 100 V	-	-	-	Through Hole	TO-262AA	-40°C ~ 150°C
DTH3006PT DIODE GEN PURP 600V 30A TO247-2 Diodes Incorporated	2,900	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	600 V	30A	2.4 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	45 ns	100 µA @ 600 V	155pF @ 4V, 1MHz	-	-	Through Hole	TO-247-2 (Type HE)	-55°C ~ 175°C
VS-8ETH06FP-N3 DIODE GP 600V 8A TO220-2FP Vishay General Semiconductor - Diodes Division	7,858	-	RFQ	Datasheet	FRED Pt®	TO-220-2 Full Pack	Tube	Active	Standard	600 V	8A	2.4 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	50 µA @ 600 V	-	-	-	Through Hole	TO-220-2 Full Pack	-65°C ~ 175°C
VS-C4PU3006L-N3 DIODE GEN PURP 600V 15A TO247AD Vishay General Semiconductor - Diodes Division	4,591	-	RFQ	Datasheet	FRED Pt®	TO-247-3	Tube	Active	Standard	600 V	15A	1.55 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	15 µA @ 600 V	-	-	-	Through Hole	TO-247AD	-55°C ~ 175°C
DSEI12-10A DIODE GEN PURP 1KV 12A TO220AC IXYS	5,381	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	Standard	1000 V	12A	2.7 V @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	250 µA @ 1000 V	-	-	-	Through Hole	TO-220AC	-40°C ~ 150°C
C6D08065A DIODE SIL CARB 650V 30A TO220-2 Wolfspeed, Inc.	3,134	-	RFQ	Datasheet	Z-Rec®	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	30A	1.5 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	518pF @ 0V, 1MHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
JANTX1N5616 DIODE GEN PURP 400V 1A AXIAL Microchip Technology	5,526	-	RFQ	Datasheet	-	A, Axial	Bulk	Active	Standard	400 V	1A	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	500 nA @ 400 V	-	Military	MIL-PRF-19500/427	Through Hole	A, Axial	-65°C ~ 200°C
JANTX1N5619 DIODE GEN PURP 600V 1A AXIAL Microchip Technology	8,229	-	RFQ	Datasheet	-	A, Axial	Bulk	Active	Standard	600 V	1A	1.6 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	500 nA @ 600 V	-	Military	MIL-PRF-19500/429	Through Hole	A, Axial	-65°C ~ 175°C
VS-1N1202A DIODE GEN PURP 200V 12A DO203AA Vishay General Semiconductor - Diodes Division	6,566	-	RFQ	Datasheet	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard	200 V	12A	1.35 V @ 12 A	Standard Recovery >500ns, > 200mA (Io)	-	2 mA @ 200 V	-	-	-	Chassis, Stud Mount	DO-203AA (DO-4)	-65°C ~ 200°C
VS-12F10 DIODE GEN PURP 100V 12A DO203AA Vishay General Semiconductor - Diodes Division	6,146	-	RFQ	Datasheet	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard	100 V	12A	1.26 V @ 38 A	Standard Recovery >500ns, > 200mA (Io)	-	12 mA @ 100 V	-	-	-	Chassis, Stud Mount	DO-203AA (DO-4)	-65°C ~ 175°C
VS-70HF10 DIODE GEN PURP 100V 70A DO203AB Vishay General Semiconductor - Diodes Division	4	-	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard	100 V	70A	1.35 V @ 220 A	Standard Recovery >500ns, > 200mA (Io)	-	15 mA @ 100 V	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-65°C ~ 180°C
1N1200A DIODE GEN PURP 100V 12A DO4 GeneSiC Semiconductor	9,031	-	RFQ	Datasheet	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard	100 V	12A	1.1 V @ 12 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 50 V	-	-	-	Chassis, Stud Mount	DO-4	-65°C ~ 200°C
STPSC10H12D DIODE SIL CARB 1.2KV 10A TO220AC STMicroelectronics	8,720	-	RFQ	Datasheet	ECOPACK®2	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	10A	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 1200 V	725pF @ 0V, 1MHz	-	-	Through Hole	TO-220AC	-40°C ~ 175°C
SICRF101200 DIODE SIC 1.2KV 10A ITO220AC SMC Diode Solutions	6,506	-	RFQ	Datasheet	-	TO-220-2 Full Pack, Isolated Tab	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	10A	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 1200 V	640pF @ 0V, 1MHz	-	-	Through Hole	ITO-220AC	-55°C ~ 175°C
VS-12F100 DIODE GEN PURP 1KV 12A DO203AA Vishay General Semiconductor - Diodes Division	4,368	-	RFQ	Datasheet	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard	1000 V	12A	1.26 V @ 38 A	Standard Recovery >500ns, > 200mA (Io)	-	12 mA @ 1000 V	-	-	-	Chassis, Stud Mount	DO-203AA (DO-4)	-65°C ~ 175°C
VS-40HFR10 DIODE GEN PURP 100V 40A DO203AB Vishay General Semiconductor - Diodes Division	8,326	-	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard, Reverse Polarity	100 V	40A	1.3 V @ 125 A	Standard Recovery >500ns, > 200mA (Io)	-	9 mA @ 100 V	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-65°C ~ 190°C

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Yes. Our sourcing team can review shortage and obsolete-part requirements and help check available supply channels or possible alternatives when appropriate.

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