Single Diodes

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
STPSC20065W DIODE SIL CARBIDE 650V 20A DO247 STMicroelectronics	9,781	-	RFQ	Datasheet	ECOPACK®2	DO-247-2 (Straight Leads)	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	20A	1.45 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	300 µA @ 650 V	1250pF @ 0V, 1MHz	-	-	Through Hole	DO-247	-40°C ~ 175°C
DSEI30-10AR DIODE GP 1KV 30A ISOPLUS247 IXYS	4,177	-	RFQ	Datasheet	-	ISOPLUS247™	Tube	Active	Standard	1000 V	30A	2.4 V @ 36 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	750 µA @ 1000 V	-	-	-	Through Hole	ISOPLUS247™ (BR)	-40°C ~ 150°C
1N6622US DIODE GEN PURP 660V 1.2A A-MELF Microchip Technology	5,542	-	RFQ	Datasheet	-	SQ-MELF, A	Bulk	Active	Standard	660 V	1.2A	1.4 V @ 1.2 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	500 nA @ 660 V	10pF @ 10V, 1MHz	-	-	Surface Mount	A-MELF	-65°C ~ 150°C
DSEP60-12AZ-TUB DIODE GEN PURP 1.2KV 60A TO268AA IXYS	15	-	RFQ	Datasheet	-	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	Standard	1200 V	60A	2.66 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	80 ns	650 µA @ 1200 V	30pF @ 600V, 1MHz	-	-	Surface Mount	TO-268AA (D3Pak-HV)	-55°C ~ 175°C
SICR20650WT DIODE SCHOTTKY 650V 10A TO247AD SMC Diode Solutions	14	-	RFQ	Datasheet	-	TO-247-3	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.7 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	150 µA @ 650 V	650pF @ 0V, 1MHz	-	-	Through Hole	TO-247AD	-55°C ~ 175°C
KSF30F60B DIODE GEN PURP 600V 30A TO247 KYOCERA AVX	5,179	-	RFQ	Datasheet	-	TO-247-3	Tube	Active	Standard	600 V	30A	1.7 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	50 µA @ 600 V	-	-	-	Through Hole	TO-247	-55°C ~ 175°C
1N3892R DIODE GEN PURP REV 400V 12A DO4 GeneSiC Semiconductor	7,271	-	RFQ	Datasheet	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard, Reverse Polarity	400 V	12A	1.4 V @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	25 µA @ 50 V	-	-	-	Chassis, Stud Mount	DO-4	-65°C ~ 150°C
1N3893R DIODE GEN PURP REV 600V 12A DO4 GeneSiC Semiconductor	2,816	-	RFQ	Datasheet	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard, Reverse Polarity	600 V	12A	1.4 V @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	25 µA @ 50 V	-	-	-	Chassis, Stud Mount	DO-4	-65°C ~ 150°C
1N3210 DIODE GEN PURP 200V 15A DO203AB GeneSiC Semiconductor	3	-	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard	200 V	15A	1.5 V @ 15 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 50 V	-	-	-	Stud Mount	DO-203AB (DO-5)	-65°C ~ 175°C
1N3214 DIODE GEN PURP 600V 15A DO5 GeneSiC Semiconductor	6,268	-	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard	600 V	15A	1.5 V @ 15 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 50 V	-	-	-	Chassis, Stud Mount	DO-5	-65°C ~ 175°C
VS-16FR80M DIODE GP REV 800V 16A DO203AA Vishay General Semiconductor - Diodes Division	4,894	-	RFQ	Datasheet	-	DO-203AA, DO-4, Stud	Box	Active	Standard, Reverse Polarity	800 V	16A	1.23 V @ 50 A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	-	-	Chassis, Stud Mount	DO-203AA (DO-4)	-65°C ~ 175°C
C4D15120A DIODE SIL CARB 1.2KV 43.5A TO220 Wolfspeed, Inc.	3,666	-	RFQ	Datasheet	Z-Rec®	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	43.5A	1.8 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	1200pF @ 0V, 1MHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
SICR40650WT DIODE SCHOTTKY 650V 20A TO247AD SMC Diode Solutions	12	-	RFQ	Datasheet	-	TO-247-3	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	20A	2 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	-	300 µA @ 650 V	650pF @ 0V, 1MHz	-	-	Through Hole	TO-247AD	-55°C ~ 175°C
S85J DIODE GEN PURP 600V 85A DO5 GeneSiC Semiconductor	9,647	-	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard	600 V	85A	1.1 V @ 85 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 100 V	-	-	-	Chassis, Stud Mount	DO-5	-65°C ~ 180°C
S85VR DIODE GEN PURP REV 1.4KV 85A DO5 GeneSiC Semiconductor	3,238	-	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard, Reverse Polarity	1400 V	85A	1.1 V @ 85 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 100 V	-	-	-	Chassis, Stud Mount	DO-5	-65°C ~ 150°C
1N6095R DIODE SCHOTTKY REV 30V 25A DO4 GeneSiC Semiconductor	9,251	-	RFQ	Datasheet	-	DO-203AA, DO-4, Stud	Bulk	Active	Schottky, Reverse Polarity	30 V	25A	580 mV @ 25 A	Fast Recovery =< 500ns, > 200mA (Io)	-	2 mA @ 20 V	-	-	-	Chassis, Stud Mount	DO-4	-55°C ~ 150°C
JANHCA1N5819 DIODE SCHOTTKY 45V 1A DO41 Microchip Technology	2,541	-	RFQ	Datasheet	-	DO-204AL, DO-41, Axial	Bulk	Active	Schottky	45 V	1A	490 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 45 V	-	Military	MIL-PRF-19500/586	Through Hole	DO-41	-55°C ~ 110°C
MBR8045 DIODE SCHOTTKY 45V 80A DO5 GeneSiC Semiconductor	6,951	-	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Schottky	45 V	80A	650 mV @ 80 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 45 V	-	-	-	Chassis, Stud Mount	DO-5	-55°C ~ 150°C
183NQ100-1 DIODE SCHOTTKY 100V 180A PRM1-1 SMC Diode Solutions	2	-	RFQ	Datasheet	-	HALF-PAK	Bulk	Active	Schottky	100 V	180A	950 mV @ 180 A	Fast Recovery =< 500ns, > 200mA (Io)	-	4.5 mA @ 100 V	4150pF @ 5V, 1MHz	-	-	Chassis Mount	PRM1-1 (Half Pak Module)	-55°C ~ 175°C
241NQ045-1 DIODE SCHOTTKY 45V 240A PRM1-1 SMC Diode Solutions	9,133	-	RFQ	Datasheet	-	HALF-PAK	Bulk	Active	Schottky	45 V	240A	690 mV @ 240 A	Fast Recovery =< 500ns, > 200mA (Io)	-	20 mA @ 45 V	10300pF @ 5V, 1MHz	-	-	Chassis Mount	PRM1-1 (Half Pak Module)	-55°C ~ 175°C

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Yes. Our sourcing team can review shortage and obsolete-part requirements and help check available supply channels or possible alternatives when appropriate.

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