Single Diodes
Browse available Single Diodes part numbers with manufacturer references, stock information, pricing, datasheets and key specifications. Use the table below to compare options for your project.
For BOM, shortage or hard-to-find requirements, send your part number and quantity to Winsun (HK) Electronics for availability, lead-time and quotation support.
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SCS306AMC7GDIODE SIL CARB 650V 6A TO220FM |
5,601 | - |
|
Datasheet | - | TO-220-2 Full Pack | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.5 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 650 V | 300pF @ 1V, 1MHz | - | - | Through Hole | TO-220FM | 175°C |
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VS-82PF120DIODE GEN PURP 120V 80A DO203AB |
2,448 | - |
|
Datasheet | - | DO-203AB, DO-5, Stud | Bulk | Active | Standard | 120 V | 80A | 1.4 V @ 220 A | Standard Recovery >500ns, > 200mA (Io) | - | - | - | - | - | Chassis, Stud Mount | DO-203AB (DO-5) | -55°C ~ 180°C |
|
DSS60-0045BDIODE SCHOTTKY 45V 60A TO247AD |
9,440 | - |
|
Datasheet | - | TO-247-2 | Tube | Active | Schottky | 45 V | 60A | 600 mV @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10 mA @ 45 V | - | - | - | Through Hole | TO-247AD | -55°C ~ 150°C |
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GE10MPS06E-TR650V 10A TO-252-2 SIC SCHOTTKY M |
5,854 | - |
|
Datasheet | MPS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 26A | 1.35 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 5 µA @ 650 V | 466pF @ 1V, 1MHz | - | - | Surface Mount | TO-252-2 | -55°C ~ 175°C |
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SCS306AGC16DIODE SIL CARB 650V 6A TO220ACP |
6,950 | - |
|
Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.5 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 650 V | 300pF @ 1V, 1MHz | - | - | Through Hole | TO-220ACFP | 175°C |
|
VS-25F10DIODE GEN PURP 100V 25A DO203AA |
7,190 | - |
|
Datasheet | - | DO-203AA, DO-4, Stud | Bulk | Active | Standard | 100 V | 25A | 1.3 V @ 78 A | Standard Recovery >500ns, > 200mA (Io) | - | 12 mA @ 100 V | - | - | - | Chassis, Stud Mount | DO-203AA (DO-4) | -65°C ~ 175°C |
|
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SCS308AMC7GDIODE SIL CARB 650V 8A TO220FM |
5,102 | - |
|
Datasheet | - | TO-220-2 Full Pack | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.5 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 400pF @ 1V, 1MHz | - | - | Through Hole | TO-220FM | 175°C |
|
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SCS308AGC16DIODE SIL CARB 650V 8A TO220ACP |
9,940 | - |
|
Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.5 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 400pF @ 1V, 1MHz | - | - | Through Hole | TO-220ACFP | 175°C |
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JAN1N4247DIODE GEN PURP 600V 1A AXIAL |
14 | - |
|
Datasheet | - | A, Axial | Bulk | Active | Standard | 600 V | 1A | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 5 µs | 1 µA @ 600 V | - | Military | MIL-PRF-19500/286 | Through Hole | A, Axial | -65°C ~ 175°C |
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|
SCS312AMC7GDIODE SIL CARB 650V 12A TO220FM |
8,395 | - |
|
Datasheet | - | TO-220-2 Full Pack | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.5 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 650 V | 600pF @ 1V, 1MHz | - | - | Through Hole | TO-220FM | 175°C |
|
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SCS312AGC16DIODE SIL CARB 650V 12A TO220ACP |
2,156 | - |
|
Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.5 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 650 V | 600pF @ 1V, 1MHz | - | - | Through Hole | TO-220ACFP | 175°C |
|
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GD30MPS06J-TR650V 30A TO-263-7 SIC SCHOTTKY M |
7,595 | - |
|
Datasheet | - | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 51A | 1.8 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 5 µA @ 650 V | 735pF @ 1V, 1MHz | - | - | Surface Mount | TO-263-7 | -55°C ~ 175°C |
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SCS315AMC7GDIODE SIL CARB 650V 15A TO220FM |
5,508 | - |
|
Datasheet | - | TO-220-2 Full Pack | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 15A | 1.5 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 75 µA @ 650 V | 750pF @ 1V, 1MHz | - | - | Through Hole | TO-220FM | 175°C |
|
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S5D10170A2DIODE SCHOTTKY SILICON CARBIDE S |
2,756 | - |
|
Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1700 V | 44A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 1700 V | 978pF @ 0V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
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SCS315AGC16DIODE SIL CARB 650V 15A TO220ACP |
3,256 | - |
|
Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 15A | 1.5 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 75 µA @ 650 V | 750pF @ 1V, 1MHz | - | - | Through Hole | TO-220ACFP | 175°C |
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PSC2065JJSIC DIODES AND FETS |
6,012 | - |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), Variant | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.8 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 180 µA @ 650 V | 680pF @ 1V, 1MHz | - | - | Surface Mount | D2PAK R2P | -55°C ~ 175°C |
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JANTX1N5617USDIODE GEN PURP 400V 1A D-5A |
2,292 | - |
|
Datasheet | - | SQ-MELF, A | Bulk | Active | Standard | 400 V | 1A | 1.6 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 500 µA @ 400 V | 35pF @ 12V, 1MHz | Military | MIL-PRF-19500/429 | Surface Mount | D-5A | -65°C ~ 175°C |
|
VS-1N1190DIODE GEN PURP 600V 35A DO203AB |
24 | - |
|
Datasheet | - | DO-203AB, DO-5, Stud | Bulk | Active | Standard | 600 V | 35A | 1.7 V @ 110 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 mA @ 600 V | - | - | - | Chassis, Stud Mount | DO-203AB (DO-5) | -65°C ~ 190°C |
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JANTX1N5615USDIODE GEN PURP 200V 1A A SQ-MELF |
7,427 | - |
|
Datasheet | - | SQ-MELF, A | Bulk | Active | Standard | 200 V | 1A | 1.6 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | - | - | Military | MIL-PRF-19500/429 | Surface Mount | A, SQ-MELF | -65°C ~ 175°C |
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PSC2065LQSIC DIODES AND FETS |
4,257 | - |
|
Datasheet | - | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.8 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 180 µA @ 650 V | 680pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
Single Diodes FAQ
Common questions about selecting, comparing and sourcing Single Diodes components through Winsun (HK) Electronics.
What should I check when selecting Single Diodes components?
Compare the manufacturer part number, electrical specifications, package, operating conditions and application requirements. The product datasheet should be used to confirm technical suitability.
Can Winsun help source specific Single Diodes part numbers?
Yes. Send the exact part number, manufacturer and required quantity. Winsun (HK) Electronics can assist with availability checks, quotation support and sourcing options based on your requirement.
Do you support shortage, obsolete or hard-to-find Single Diodes parts?
Yes. Our sourcing team can review shortage and obsolete-part requirements and help check available supply channels or possible alternatives when appropriate.
How do I request a quote for Single Diodes components?
Submit an RFQ with the part number, manufacturer, quantity and target delivery requirement. Our sales team will review your request and follow up with current sourcing information.
