FET, MOSFET Arrays

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
SSM6N7002KFU,LF MOSFET 2N-CH 60V 0.3A US6 Toshiba Semiconductor and Storage	239,024	-	RFQ	Datasheet	-	6-TSSOP, SC-88, SOT-363	Tape & Reel (TR)	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	-	60V	300mA	1.5Ohm @ 100mA, 10V	2.1V @ 250µA	0.6nC @ 4.5V	40pF @ 10V	285mW	150°C (TJ)	-	-	Surface Mount	US6
SSM6L56FE,LM MOSFET N/P-CH 20V 0.8A ES6 Toshiba Semiconductor and Storage	58,717	-	RFQ	Datasheet	-	SOT-563, SOT-666	Tape & Reel (TR)	Active	MOSFET (Metal Oxide)	N and P-Channel	Logic Level Gate, 1.5V Drive	20V	800mA (Ta)	235mOhm @ 800mA, 4.5V, 390mOhm @ 800mA, 4.5V	1V @ 1mA	1nC @ 10V	55pF @ 10V, 100pF @ 10V	150mW (Ta)	150°C	-	-	Surface Mount	ES6
SSM6N37FU,LF MOSFET 2N-CH 20V 0.25A US6 Toshiba Semiconductor and Storage	147,393	-	RFQ	Datasheet	-	6-TSSOP, SC-88, SOT-363	Tape & Reel (TR)	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	Logic Level Gate, 1.5V Drive	20V	250mA (Ta)	2.2Ohm @ 100mA, 4.5V	1V @ 1mA	-	12pF @ 10V	300mW	150°C	-	-	Surface Mount	US6
SSM6L14FE(TE85L,F) MOSFET N/P-CH 20V 0.8A ES6 Toshiba Semiconductor and Storage	27,811	-	RFQ	Datasheet	-	SOT-563, SOT-666	Tape & Reel (TR)	Active	MOSFET (Metal Oxide)	N and P-Channel	Logic Level Gate, 1.5V Drive	20V	800mA (Ta), 720mA (Ta)	240mOhm @ 500mA, 4.5V, 300mOhm @ 400mA, 4.5V	1V @ 1mA	2nC @ 4.5V, 1.76nC @ 4.5V	90pF @ 10V, 110pF @ 10V	150mW (Ta)	150°C	-	-	Surface Mount	ES6
SSM6L09FUTE85LF MOSFET N/P-CH 30V 0.4A US6 Toshiba Semiconductor and Storage	27,660	-	RFQ	Datasheet	-	6-TSSOP, SC-88, SOT-363	Tape & Reel (TR)	Not For New Designs	MOSFET (Metal Oxide)	N and P-Channel	Logic Level Gate	30V	400mA, 200mA	700mOhm @ 200MA, 10V	1.8V @ 100µA	-	20pF @ 5V	300mW	150°C (TJ)	-	-	Surface Mount	US6
SSM6N58NU,LF MOSFET 2N-CH 30V 4A 6UDFN Toshiba Semiconductor and Storage	143,314	-	RFQ	Datasheet	-	6-WDFN Exposed Pad	Tape & Reel (TR)	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	Logic Level Gate, 1.8V Drive	30V	4A	84mOhm @ 2A, 4.5V	1V @ 1mA	1.8nC @ 4.5V	129pF @ 15V	1W	150°C (TJ)	-	-	Surface Mount	6-UDFN (2x2)
SSM6N57NU,LF MOSFET 2N-CH 30V 4A 6DFN Toshiba Semiconductor and Storage	86,896	-	RFQ	Datasheet	-	6-WDFN Exposed Pad	Tape & Reel (TR)	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	-	30V	4A	46mOhm @ 2A, 4.5V	1V @ 1mA	4nC @ 4.5V	310pF @ 10V	1W	150°C (TJ)	-	-	Surface Mount	6-µDFN (2x2)
SSM6N7002CFU,LF MOSFET 2N-CH 60V 0.17A US6 Toshiba Semiconductor and Storage	26,047	-	RFQ	Datasheet	-	6-TSSOP, SC-88, SOT-363	Tape & Reel (TR)	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	-	60V	170mA	3.9Ohm @ 100mA, 10V	2.1V @ 250µA	0.35nC @ 4.5V	17pF @ 10V	285mW	150°C (TJ)	-	-	Surface Mount	US6
SSM6N15AFU,LF MOSFET 2N-CH 30V 0.1A US6 Toshiba Semiconductor and Storage	23,544	-	RFQ	Datasheet	-	6-TSSOP, SC-88, SOT-363	Tape & Reel (TR)	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	Logic Level Gate	30V	100mA	3.6Ohm @ 10mA, 4V	1.5V @ 100µA	-	13.5pF @ 3V	300mW	150°C (TJ)	-	-	Surface Mount	US6
SSM6P15FU,LF MOSFET 2P-CH 30V 0.1A US6 Toshiba Semiconductor and Storage	30,950	-	RFQ	Datasheet	-	6-TSSOP, SC-88, SOT-363	Tape & Reel (TR)	Active	MOSFET (Metal Oxide)	2 P-Channel (Dual)	-	30V	100mA	12Ohm @ 10mA, 4V	1.7V @ 100µA	-	9.1pF @ 3V	200mW (Ta)	150°C	-	-	Surface Mount	US6

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FET, MOSFET Arrays FAQ

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