FET, MOSFET Arrays

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
SSM6N35AFE,LF MOSFET 2N-CH 20V 0.25A ES6 Toshiba Semiconductor and Storage	63,479	-	RFQ	Datasheet	-	SOT-563, SOT-666	Tape & Reel (TR)	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	Logic Level Gate, 1.2V Drive	20V	250mA (Ta)	1.1Ohm @ 150mA, 4.5V	1V @ 100µA	0.34nC @ 4.5V	36pF @ 10V	250mW	150°C	-	-	Surface Mount	ES6
SSM6P35AFE,LF MOSFET 2P-CH 20V 0.25A ES6 Toshiba Semiconductor and Storage	6,009	-	RFQ	Datasheet	U-MOSVII	SOT-563, SOT-666	Tape & Reel (TR)	Active	MOSFET (Metal Oxide)	2 P-Channel (Dual)	Logic Level Gate, 1.2V Drive	20V	250mA (Ta)	1.4Ohm @ 150mA, 4.5V	1V @ 100µA	-	42pF @ 10V	150mW (Ta)	150°C	-	-	Surface Mount	ES6
SSM6N44FE,LM MOSFET 2N-CH 30V 0.1A ES6 Toshiba Semiconductor and Storage	135,240	-	RFQ	Datasheet	-	SOT-563, SOT-666	Tape & Reel (TR)	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	Logic Level Gate	30V	100mA	4Ohm @ 10mA, 4V	1.5V @ 100µA	-	8.5pF @ 3V	150mW	150°C (TJ)	-	-	Surface Mount	ES6
SSM6L36FE,LM MOSFET N/P-CH 20V 0.5A ES6 Toshiba Semiconductor and Storage	39,399	-	RFQ	Datasheet	-	SOT-563, SOT-666	Tape & Reel (TR)	Active	MOSFET (Metal Oxide)	N and P-Channel	Logic Level Gate	20V	500mA, 330mA	630mOhm @ 200mA, 5V	1V @ 1mA	1.23nC @ 4V	46pF @ 10V	150mW	150°C (TJ)	-	-	Surface Mount	ES6
SSM6N43FU,LF MOSFET 2N-CH 20V 0.5A US6 Toshiba Semiconductor and Storage	8,860	-	RFQ	Datasheet	-	6-TSSOP, SC-88, SOT-363	Tape & Reel (TR)	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	Logic Level Gate, 1.5V Drive	20V	500mA	630mOhm @ 200mA, 5V	1V @ 1mA	1.23nC @ 4V	46pF @ 10V	200mW	150°C (TJ)	-	-	Surface Mount	US6
SSM6N56FE,LM MOSFET 2N-CH 20V 0.8A ES6 Toshiba Semiconductor and Storage	34,922	-	RFQ	Datasheet	-	SOT-563, SOT-666	Tape & Reel (TR)	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	Logic Level Gate, 1.5V Drive	20V	800mA	235mOhm @ 800mA, 4.5V	1V @ 1mA	1nC @ 4.5V	55pF @ 10V	150mW	150°C (TJ)	-	-	Surface Mount	ES6
SSM6N17FU(TE85L,F) MOSFET 2N-CH 50V 0.1A US6 Toshiba Semiconductor and Storage	1,027	-	RFQ	Datasheet	-	6-TSSOP, SC-88, SOT-363	Tape & Reel (TR)	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	-	50V	100mA (Ta)	20Ohm @ 10mA, 4V	1.5V @ 1µA	-	7pF @ 3V	200mW (Ta)	150°C	-	-	Surface Mount	US6
SSM6L35FU(TE85L,F) MOSFET N/P-CH 20V 0.18A US6 Toshiba Semiconductor and Storage	2,876	-	RFQ	Datasheet	-	6-TSSOP, SC-88, SOT-363	Tape & Reel (TR)	Active	MOSFET (Metal Oxide)	N and P-Channel	Logic Level Gate, 1.2V Drive	20V	180mA, 100mA	3Ohm @ 50mA, 4V	1V @ 1mA	-	9.5pF @ 3V	200mW	-55°C ~ 150°C (TJ)	-	-	Surface Mount	US6
SSM6P15FE(TE85L,F) MOSFET 2P-CH 30V 0.1A ES6 Toshiba Semiconductor and Storage	14,890	-	RFQ	Datasheet	-	SOT-563, SOT-666	Tape & Reel (TR)	Active	MOSFET (Metal Oxide)	2 P-Channel (Dual)	Logic Level Gate	30V	100mA	12Ohm @ 10mA, 4V	1.7V @ 100µA	-	9.1pF @ 3V	150mW	150°C (TJ)	-	-	Surface Mount	ES6
SSM6N40TU,LF MOSFET 2N-CH 30V 1.6A UF6 Toshiba Semiconductor and Storage	7,754	-	RFQ	Datasheet	-	6-SMD, Flat Leads	Tape & Reel (TR)	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	Logic Level Gate, 4V Drive	30V	1.6A (Ta)	122mOhm @ 1A, 10V	2.6V @ 1mA	5.1nC @ 10V	180pF @ 15V	500mW (Ta)	150°C	-	-	Surface Mount	UF6

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FET, MOSFET Arrays FAQ

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Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

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