FETs, MOSFETs

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
G26P04D5 MOSFET P-CH 40V 26A DFN5*6-8L Goford Semiconductor	10,000	-	RFQ	Datasheet	TrenchFET®	8-PowerTDFN	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	-	26A (Tc)	4.5V, 10V	18mOhm @ 12A, 10V	2.5V @ 250µA	-	±20V	-	-	50W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-DFN (4.9x5.75)
G500P03IE MOSFET P-CH ESD 30V 4.6A SOT-23 Goford Semiconductor	3,000	-	RFQ	Datasheet	TrenchFET®	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	30 V	4.6A (Tc)	2.5V, 4.5V, 10V	55mOhm @ 4A, 10V	1.3V @ 250µA	13 nC @ 10 V	±12V	680 pF @ 15 V	-	1.4W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23
G08P06D3 MOSFET P-CH 60V 8A DFN3*3-8L Goford Semiconductor	20,000	-	RFQ	Datasheet	TrenchFET®	8-PowerVDFN	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	-	8A (Tc)	10V	52mOhm @ 6A, 10V	3.5V @ 250µA	-	±20V	-	-	32W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-DFN (3.15x3.05)
G70P02K MOSFET P-CH 15V 70A TO-252 Goford Semiconductor	20,000	-	RFQ	Datasheet	TrenchFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	-	70A (Tc)	2.5V, 4.5V	8.5mOhm @ 20A, 4.5V	1.5V @ 250µA	-	±12V	-	-	70W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252
G1002 MOSFET N-CH 100V 2A 1.3W SOT-23 Goford Semiconductor	2,980	-	RFQ	Datasheet	TrenchFET®	TO-236-3, SC-59, SOT-23-3	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	100 V	2A (Tc)	4.5V, 10V	250mOhm @ 2A, 10V	3V @ 250µA	10 nC @ 10 V	±20V	535 pF @ 10 V	-	1.3W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3
G3416 MOSFET N-CH ESD 20V 6A SOT-23 Goford Semiconductor	2,920	-	RFQ	Datasheet	TrenchFET®	TO-236-3, SC-59, SOT-23-3	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	20 V	6A (Tc)	2.5V, 4.5V	20mOhm @ 3A, 4.5V	1.3V @ 250µA	15 nC @ 10 V	±12V	748 pF @ 10 V	-	1.3W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23
G12P10TE MOSFET P-CH ESD 100V 12A 44.6W T Goford Semiconductor	3,000	-	RFQ	Datasheet	TrenchFET®	TO-220-3	Tube	Active	P-Channel	MOSFET (Metal Oxide)	-	12A (Tc)	10V	200mOhm @ 6A, 10V	3V @ 250µA	-	±20V	-	-	40W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220
630A MOSFET N-CH 200V 11A TO-252 Goford Semiconductor	60,000	-	RFQ	Datasheet	TrenchFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	-	11A (Tc)	10V	280mOhm @ 4.5A, 10V	3V @ 250µA	-	±20V	-	-	83W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252
2301H P30V,RD(MAX)<130M@-4.5V,RD(MAX)< Goford Semiconductor	2,771	-	RFQ	Datasheet	TrenchFET®	TO-236-3, SC-59, SOT-23-3	Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	30 V	2.8A (Tc)	4.5V, 10V	75mOhm @ 3A, 10V	2.4V @ 250µA	4.5 nC @ 2.5 V	±20V	366 pF @ 15 V	-	890mW (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3
2300F N20V, 6A,RD<27M@4.5V,VTH0.5V~0.9 Goford Semiconductor	1,129	-	RFQ	Datasheet	TrenchFET®	TO-236-3, SC-59, SOT-23-3	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	20 V	4.5A (Tc)	2.5V, 4.5V	27mOhm @ 2.3A, 4.5V	900mV @ 250µA	11.6 nC @ 4.5 V	±12V	363 pF @ 10 V	-	1W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3

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FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

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Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

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Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

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