FETs, MOSFETs

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
G1K1P06LH MOSFET P-CH 60V 4.5A 3.1W SOT-2 Goford Semiconductor	3,000	-	RFQ	Datasheet	TrenchFET®	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	60 V	4.5A (Tc)	10V	110mOhm @ -3A,- 10V	4V @ 250µA	11 nC @ 10 V	±20V	970 pF @ 30 V	-	3.1W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3
GT800N10L MOSFET N-CH 100V 3.5A SOT-23-3L Goford Semiconductor	2,598	-	RFQ	Datasheet	SGT	TO-236-3, SC-59, SOT-23-3	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	100 V	3.5A (Tc)	4.5V, 10V	80mOhm @ 2A, 10V	3V @ 250µA	5 nC @ 10 V	±20V	209 pF @ 50 V	-	1.7W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3
G45P40T MOSFET P-CH 40V 45A TO-220 Goford Semiconductor	13,000	-	RFQ	Datasheet	TrenchFET®	TO-220-3	Tube	Active	P-Channel	MOSFET (Metal Oxide)	-	45A (Tc)	4.5V, 10V	16mOhm @ 30A, 10V	2.5V @ 250µA	-	±20V	-	-	80W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220
G250N03IE N30V,ESD 5.3A,RD<25M@10V,VTH0.5V Goford Semiconductor	2,573	-	RFQ	Datasheet	TrenchFET®	SOT-23-6	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	30 V	5.3A (Tc)	2.5V, 10V	25mOhm @ 4A, 10V	1.3V @ 250µA	9.1 nC @ 4.5 V	±10V	573 pF @ 15 V	-	1.4W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-6L
3400 N30V,RD(MAX)<27M@10V,RD(MAX)<33M Goford Semiconductor	4,484	-	RFQ	Datasheet	TrenchFET®	TO-236-3, SC-59, SOT-23-3	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	30 V	5.6A (Tc)	4.5V, 10V	27mOhm @ 3A, 10V	1.3V @ 250µA	16 nC @ 4.5 V	±12V	552 pF @ 15 V	-	1.4W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23
G9435S P-30V,-5.1A,RD(MAX)<55M@-10V,VTH Goford Semiconductor	3,890	-	RFQ	Datasheet	TrenchFET®	8-SOIC (0.154", 3.90mm Width)	Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	30 V	5.1A (Tc)	4.5V, 10V	55mOhm @ 5.1A, 10V	3V @ 250µA	12 nC @ 10 V	±20V	1040 pF @ 15 V	-	2.5W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SOP
2301 P20V,RD(MAX)<56M@-4.5V,RD(MAX)<8 Goford Semiconductor	3,793	-	RFQ	Datasheet	TrenchFET®	TO-236-3, SC-59, SOT-23-3	Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	20 V	3A (Tc)	2.5V, 4.5V	56mOhm @ 1.7A, 4.5V	900mV @ 250µA	8.5 nC @ 2.5 V	±12V	640 pF @ 10 V	-	1W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23
G5N02L N20V, 5A, RD<18M@10V,VTH0.4V~1.0 Goford Semiconductor	3,000	-	RFQ	Datasheet	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	20 V	5A (Tc)	2.5V, 10V	18mOhm @ 4.2A, 10V	1V @ 250µA	11 nC @ 4.5 V	±12V	780 pF @ 10 V	-	1.25W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3
G350P02LLE P-20V,-8.2A,RD(MAX)<8.5M@-4.5V,V Goford Semiconductor	2,985	-	RFQ	Datasheet	TrenchFET®	SOT-23-6	Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	20 V	4.5A (Tc)	1.8V, 4.5V	35mOhm @ 4A, 4.5V	1V @ 250µA	17.2 nC @ 10 V	±10V	1126 pF @ 10 V	-	1.4W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-6L
GT6K2P10IH MOSFET P-CH 100V 1A SOT-23 Goford Semiconductor	1,713	-	RFQ	Datasheet	SGT	TO-236-3, SC-59, SOT-23-3	Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	100 V	1A (Tc)	10V	670mOhm @ 1A, 10V	3V @ 250µA	10 nC @ 10 V	±20V	253 pF @ 50 V	-	1.4W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3

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FETs, MOSFETs FAQ

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