FETs, MOSFETs

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
G02P06 P60V,RD(MAX)<190M@-10V,RD(MAX)<2 Goford Semiconductor	2,412	-	RFQ	Datasheet	TrenchFET®	TO-236-3, SC-59, SOT-23-3	Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	60 V	1.6A (Tc)	4.5V, 10V	190mOhm @ 1A, 10V	2.5V @ 250µA	11.3 nC @ 10 V	±20V	566 pF @ 30 V	-	1.5W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23
GT1003A N100V, 3A,RD<140M@10V,VTH1.0V~3. Goford Semiconductor	1,947	-	RFQ	Datasheet	SGT	TO-236-3, SC-59, SOT-23-3	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	100 V	3A (Tc)	10V	80mOhm @ 3A, 10V	2.5V @ 250µA	5 nC @ 10 V	±20V	209 pF @ 50 V	-	1.7W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3
G300N04D3 MOSFET N-CH 40V 6A DFN3*3-8L Goford Semiconductor	4,990	-	RFQ	Datasheet	TrenchFET®	8-PowerVDFN	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	40 V	6A (Tc)	4.5V, 10V	30mOhm @ 3A, 10V	2.5V @ 250µA	10 nC @ 10 V	±20V	479 pF @ 20 V	-	1.25W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-DFN (3.15x3.05)
G800N06H N60V, 3A,RD<80M@10V,VTH0.7V~1.2V Goford Semiconductor	2,325	-	RFQ	Datasheet	TrenchFET®	TO-261-4, TO-261AA	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	3A (Tc)	4.5V, 10V	80mOhm @ 3A, 10V	1.2V @ 250µA	6 nC @ 4.5 V	±20V	457 pF @ 30 V	-	1.2W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-223
5P40 P40V,RD(MAX)<85M@-10V,RD(MAX)<12 Goford Semiconductor	9,210	-	RFQ	Datasheet	TrenchFET®	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	40 V	5A (Tc)	4.5V, 10V	85mOhm @ 5A, 10V	3V @ 250µA	14 nC @ 10 V	±20V	600 pF @ 20 V	-	2W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3
GT013N04D5 N40V,195A,RD<1.7M@10V,VTH2.0V~4. Goford Semiconductor	5,000	-	RFQ	Datasheet	-	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	40 V	195A (Tc)	10V	1.7mOhm @ 30A, 10V	4V @ 250µA	50 nC @ 10 V	±20V	3927 pF @ 20 V	-	78W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-DFN (4.9x5.75)
3400L N30V,RD(MAX)<27M@10V,RD(MAX)<33M Goford Semiconductor	3,785	-	RFQ	Datasheet	TrenchFET®	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	30 V	5.6A (Tc)	4.5V, 10V	27mOhm @ 2.8A, 10V	1.4V @ 250µA	9.5 nC @ 4.5 V	±12V	820 pF @ 15 V	-	1.4W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3
G66 P-16V,-5.8A,RD(MAX)<45M@-4.5V,VT Goford Semiconductor	3,000	-	RFQ	Datasheet	TrenchFET®	6-WDFN Exposed Pad	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	16 V	5.8A (Tc)	2.5V, 4.5V	45mOhm @ 4.1A, 4.5V	1V @ 250µA	7.8 nC @ 4.5 V	±12V	740 pF @ 4 V	-	1.7W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	6-DFN (2x2)
G3401L P30V,RD(MAX)<60M@-10V,RD(MAX)<70 Goford Semiconductor	2,103	-	RFQ	Datasheet	TrenchFET®	TO-236-3, SC-59, SOT-23-3	Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	30 V	4.4A (Tc)	2.5V, 4.5V, 10V	55mOhm @ 4A, 10V	1.3V @ 250µA	9.3 nC @ 4.5 V	±12V	652 pF @ 15 V	-	1.3W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3
03N06L N60V,RD(MAX)<100M@10V,RD(MAX)<12 Goford Semiconductor	6,330	-	RFQ	Datasheet	TrenchFET®	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	3A (Tc)	4.5V, 10V	80mOhm @ 2A, 10V	1.2V @ 250µA	14.6 nC @ 10 V	±20V	458 pF @ 30 V	-	1.7W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3

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FETs, MOSFETs FAQ

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