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FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

Parametric Selection Filter options by technical parameters
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Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
G1003A Goford Semiconductor

G1003A

N100V,RD(MAX)<210M@10V,RD(MAX)<2

Goford Semiconductor

2,615 -
Datasheet TrenchFET® TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 100 V 3A (Tc) 4.5V, 10V 120mOhm @ 3A, 10V 2.5V @ 250µA 17 nC @ 10 V ±20V 532 pF @ 25 V - 1.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3
G20N03D2 Goford Semiconductor

G20N03D2

N30V,RD(MAX)<24M@10V,RD(MAX)<29M

Goford Semiconductor

2,413 -
Datasheet TrenchFET® 6-WDFN Exposed Pad Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 30 V 9A (Tc) 4.5V, 10V 15mOhm @ 5A, 10V 2V @ 250µA 20 nC @ 10 V ±20V 860 pF @ 30 V - 1.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 6-DFN (2x2)
G1K1P06HH Goford Semiconductor

G1K1P06HH

P-60V,-4.5A,RD(MAX)<110M@-10V,VT

Goford Semiconductor

2,135 -
Datasheet TrenchFET® TO-261-4, TO-261AA Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 60 V 4.5A (Tc) 10V 110mOhm @ 4A, 10V 4V @ 250µA 11 nC @ 10 V ±20V 981 pF @ 30 V - 3.1W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-223
G050N06LL Goford Semiconductor

G050N06LL

N60V, 5A,RD<45M@10V,VTH1.0V~2.5V

Goford Semiconductor

11,800 -
Datasheet TrenchFET® SOT-23-6 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 5A (Tc) 4.5V, 10V 45mOhm @ 5A, 10V 2.5V @ 250µA 26.4 nC @ 10 V ±20V 1343 pF @ 30 V - 1.25W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-6L
G170P02D2 Goford Semiconductor

G170P02D2

P-20V,-16A,RD(MAX)<17M@-4.5V,VTH

Goford Semiconductor

2,970 -
Datasheet TrenchFET® 6-UDFN Exposed Pad Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 20 V 16A (Tc) 2.5V, 4.5V 17mOhm @ 6A, 4.5V 1V @ 250µA 30 nC @ 10 V ±8V 2179 pF @ 10 V - 18W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 6-DFN (2x2)
G2002A Goford Semiconductor

G2002A

N200V, 2A,RD<540M@10V,VTH1.0V~3.

Goford Semiconductor

1,225 -
Datasheet TrenchFET® SOT-23-6 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 200 V 2A (Tc) 4.5V, 10V 540mOhm @ 1A, 10V 3V @ 250µA 16 nC @ 10 V ±20V 733 pF @ 100 V - 2.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-6L
G1006LE Goford Semiconductor

G1006LE

N100V,RD(MAX)<150M@10V,RD(MAX)<1

Goford Semiconductor

7,247 -
Datasheet TrenchFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 3A (Tc) 4.5V, 10V 150mOhm @ 3A, 10V 2.5V @ 250µA 17 nC @ 10 V ±20V 532 pF @ 50 V - 1.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3
9926 Goford Semiconductor

9926

N20V,RD(MAX)<25M@4.5V,RD(MAX)<30

Goford Semiconductor

3,913 -
Datasheet - 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 20 V 6A - 25mOhm @ 4.5A, 4.5V 1.2V @ 250µA 10 nC @ 4.5 V ±10V 640 pF @ 10 V - 1.25W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
G2N65K Goford Semiconductor

G2N65K

MOSFET N-CH 650V 2A 35W TO-252

Goford Semiconductor

2,455 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 650 V 2A (Tc) 10V 5Ohm @ 1A, 10V 3.2V @ 250µA 8 nC @ 10 V ±20V 250 pF @ 400 V - 35W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
G09P02L Goford Semiconductor

G09P02L

P20V,RD(MAX)<23M@-4.5V,RD(MAX)<3

Goford Semiconductor

5,285 -
Datasheet TrenchFET® TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 20 V 9A (Tc) 2.5V, 4.5V 20mOhm @ 1A, 4.5V 1.2V @ 250µA 72 nC @ 4.5 V ±12V 2196 pF @ 10 V - 2.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3
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WINSUN SOURCING SUPPORT

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FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.