FETs, MOSFETs

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
GT040N10T MOSFET N-CH 100V 140A 200W 4.5m Goford Semiconductor	1,000	-	RFQ	Datasheet	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	140A (Tc)	4.5V, 10V	4.5mOhm @ 40A, 10V	2.5V @ 250µA	100 nC @ 10 V	±20V	5920 pF @ 50 V	-	200W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220
GT045N10M MOSFET N-CH 100V 120A TO-263 Goford Semiconductor	800	-	RFQ	Datasheet	SGT	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	-	120A (Tc)	10V	4.5mOhm @ 30A, 10V	4V @ 250µA	-	±20V	-	-	180W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263
GC11N65M MOSFET N-CH 650V 11A TO-263 Goford Semiconductor	800	-	RFQ	Datasheet	Cool MOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	-	11A (Tc)	10V	360mOhm @ 5.5A, 10V	4V @ 250µA	-	±30V	-	-	78W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263
G08N02L N20V, 8A, RD<12.3M@4.5V,VTH0.5V~ Goford Semiconductor	8,946	-	RFQ	Datasheet	-	TO-236-3, SC-59, SOT-23-3		Active	N-Channel	MOSFET (Metal Oxide)	20 V	8A (Tc)	2.5V, 4.5V	12.3mOhm @ 12A, 4.5V	900mV @ 250µA	22 nC @ 10 V	±12V	929 pF @ 10 V	-	1.5W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3
G06N02H N20V, 6A, RD<14.3M@4.5V,VTH0.5V~ Goford Semiconductor	2,096	-	RFQ	Datasheet	-	TO-261-4, TO-261AA		Active	N-Channel	MOSFET (Metal Oxide)	20 V	6A (Tc)	2.5V, 4.5V	14.3mOhm @ 3A, 4.5V	900mV @ 250µA	12.5 nC @ 10 V	±12V	1140 pF @ 10 V	-	1.8W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-223
G08N03D2 N30V,8A,RD<20M@10V,VTH1.0V~2.0V, Goford Semiconductor	8,365	-	RFQ	Datasheet	-	6-WDFN Exposed Pad		Active	N-Channel	MOSFET (Metal Oxide)	30 V	8A (Tc)	4.5V, 10V	20mOhm @ 4A, 10V	2V @ 250µA	15 nC @ 10 V	±20V	681 pF @ 15 V	-	17W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	6-DFN (2x2)
2002A N190V,5A,RD<540M@10V,VTH1.0V~3.0 Goford Semiconductor	7,467	-	RFQ	Datasheet	-	SOT-23-6		Obsolete	N-Channel	MOSFET (Metal Oxide)	190 V	5A (Tc)	4.5V, 10V	540mOhm @ 1A, 10V	3V @ 250µA	16 nC @ 10 V	±20V	733 pF @ 100 V	-	1.4W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-6L
G7P03D2 P-30V,-7A,RD(MAX)<20.5M@-10V,VTH Goford Semiconductor	9,882	-	RFQ	Datasheet	-	6-WDFN Exposed Pad		Active	P-Channel	MOSFET (Metal Oxide)	30 V	7A (Tc)	4.5V, 10V	20.5mOhm @ 1A, 10V	1.1V @ 250µA	19 nC @ 4.5 V	±20V	1900 pF @ 15 V	-	1.3W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	6-DFN (2x2)
G08N02H N20V, 12A, RD<11.3M@4.5V,VTH0.5V Goford Semiconductor	6,927	-	RFQ	Datasheet	-	TO-261-4, TO-261AA		Active	N-Channel	MOSFET (Metal Oxide)	20 V	12A (Tc)	2.5V, 4.5V	11.3mOhm @ 1A, 4.5V	900mV @ 250µA	12.5 nC @ 4.5 V	±12V	1255 pF @ 10 V	-	1.7W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-223
GT100N04K N40V,50A,RD<10M@10V,VTH1.2V~2.2V Goford Semiconductor	2,566	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63		Active	N-Channel	MOSFET (Metal Oxide)	40 V	50A (Tc)	4.5V, 10V	10mOhm @ 5A, 10V	2.2V @ 250µA	32 nC @ 10 V	±20V	644 pF @ 20 V	-	80W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252

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FETs, MOSFETs FAQ

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Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

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