FETs, MOSFETs

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
20N06 N60V,25A,RD<24M@10V,VTH1.0V~2.5V Goford Semiconductor	8,215	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Active	N-Channel	MOSFET (Metal Oxide)	60 V	25A (Tc)	4.5V, 10V	24mOhm @ 20A, 10V	2.5V @ 250µA	25 nC @ 10 V	±20V	1609 pF @ 30 V	-	41W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252
GT040N04D5I N40V,110A,RD<3.5M@10V,VTH1.0V~2. Goford Semiconductor	2,055	-	RFQ	Datasheet	-	8-PowerTDFN	Obsolete	N-Channel	MOSFET (Metal Oxide)	40 V	110A (Tc)	4.5V, 10V	3.5mOhm @ 10A, 10V	2.5V @ 250µA	50 nC @ 10 V	±20V	2298 pF @ 20 V	-	160W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-DFN (4.9x5.75)
G75P04SI P-40V,-11A,RD(MAX)<8M@-10V,VTH-1 Goford Semiconductor	2,895	-	RFQ	Datasheet	-	8-SOIC (0.154", 3.90mm Width)	Obsolete	P-Channel	MOSFET (Metal Oxide)	40 V	11A (Tc)	4.5V, 10V	8mOhm @ 10A, 10V	2.5V @ 250µA	106 nC @ 10 V	±20V	6509 pF @ 20 V	-	2.5W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SOP
GT080N08D5 N85V,65A,RD<8.5M@10V,VTH2.0V~4.0 Goford Semiconductor	5,599	-	RFQ	Datasheet	-	8-PowerTDFN	Active	N-Channel	MOSFET (Metal Oxide)	85 V	65A (Tc)	10V	8mOhm @ 20A, 10V	4V @ 250µA	39 nC @ 10 V	±20V	1885 pF @ 50 V	-	69W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-DFN (4.9x5.75)
G75P04D5I P-40V,-70A,RD(MAX)<6.5M@-10V,VTH Goford Semiconductor	4,636	-	RFQ	Datasheet	-	8-PowerTDFN	Obsolete	P-Channel	MOSFET (Metal Oxide)	40 V	70A (Tc)	4.5V, 10V	6.5mOhm @ 20A, 10V	2.5V @ 250µA	106 nC @ 10 V	±20V	6414 pF @ 20 V	-	150W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-DFN (4.9x5.75)
GT52N10D5I N100V,65A,RD<8M@10V,VTH1.0V~2.5V Goford Semiconductor	2,858	-	RFQ	Datasheet	-	8-PowerTDFN	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	65A (Tc)	4.5V, 10V	7.5mOhm @ 50A, 10V	2.5V @ 250µA	35 nC @ 10 V	±20V	2428 pF @ 50 V	-	79W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-DFN (4.9x5.75)
G75P04KI P-40V,-70A,RD(MAX)<6.5M@-10V,VTH Goford Semiconductor	3,017	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Obsolete	P-Channel	MOSFET (Metal Oxide)	40 V	70A (Tc)	4.5V, 10V	6.5mOhm @ 20A, 10V	2.5V @ 250µA	106 nC @ 10 V	±20V	6586 pF @ 20 V	-	130W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252
GT080N10KI N100V,65A,RD<8M@10V,VTH1.0V~2.5V Goford Semiconductor	8,490	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	65A (Tc)	4.5V, 10V	8mOhm @ 20A, 10V	2.5V @ 250µA	35 nC @ 10 V	±20V	2394 pF @ 50 V	-	79W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252
G75P04TI P-40V,-70A,RD(MAX)<7M@-10V,VTH-1 Goford Semiconductor	2,177	-	RFQ	Datasheet	-	TO-220-3	Obsolete	P-Channel	MOSFET (Metal Oxide)	40 V	70A (Tc)	4.5V, 10V	7mOhm @ 20A, 10V	2.5V @ 250µA	106 nC @ 10 V	±20V	6407 pF @ 20 V	-	277W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220
GT009N04D5 N40V,100A,RD<1.3M@10V,VTH1.0V~2. Goford Semiconductor	6,998	-	RFQ	Datasheet	-	8-PowerTDFN	Active	N-Channel	MOSFET (Metal Oxide)	45 V	100A (Tc)	4.5V, 10V	1.3mOhm @ 20A, 10V	2.5V @ 250µA	86 nC @ 10 V	±20V	6864 pF @ 20 V	-	125W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-DFN (4.9x5.75)

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FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

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Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

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Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

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