FETs, MOSFETs
Browse available FETs, MOSFETs part numbers with manufacturer references, stock information, pricing, datasheets and key specifications. Use the table below to compare options for your project.
For BOM, shortage or hard-to-find requirements, send your part number and quantity to Winsun (HK) Electronics for availability, lead-time and quotation support.
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPZ60R040C7XKSA1MOSFET N-CH 600V 50A TO247-4 |
641 | - |
|
Datasheet | CoolMOS™ C7 | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 50A (Tc) | 10V | 40mOhm @ 24.9A, 10V | 4V @ 1.24mA | 107 nC @ 10 V | ±20V | 4340 pF @ 400 V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-4 |
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G3R60MT07D750V 60M TO-247-3 G3R SIC MOSFET |
1,839 | - |
|
Datasheet | G3R™ | TO-247-3 | Tube | Active | - | SiCFET (Silicon Carbide) | 750 V | - | - | - | - | - | +20V, -10V | - | - | - | - | - | - | Through Hole | TO-247-3 |
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IXTH6N50D2MOSFET N-CH 500V 6A TO247 |
220 | - |
|
Datasheet | Depletion | TO-247-3 | Tube | Active | N-Channel, Depletion Mode | MOSFET (Metal Oxide) | 500 V | 6A (Tc) | - | 500mOhm @ 3A, 0V | - | 96 nC @ 5 V | ±20V | 2800 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 (IXTH) |
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AUIRF7769L2TRMOSFET N-CH 100V 375A DIRECTFET |
7,817 | - |
|
Datasheet | HEXFET® | DirectFET™ Isometric L8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 375A (Tc) | 10V | 3.5mOhm @ 74A, 10V | 4V @ 250µA | 300 nC @ 10 V | ±20V | 11560 pF @ 25 V | - | 3.3W (Ta), 125W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | DirectFET™ Isometric L8 |
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IXTQ69N30PMOSFET N-CH 300V 69A TO3P |
293 | - |
|
Datasheet | Polar | TO-3P-3, SC-65-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 69A (Tc) | 10V | 49mOhm @ 500mA, 10V | 5V @ 250µA | 180 nC @ 10 V | ±20V | 4960 pF @ 25 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-3P |
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IPW65R035CFD7AXKSA1MOSFET N-CH 650V 63A TO247-3-41 |
1,148 | - |
|
Datasheet | CoolMOS™ CFD7A | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 63A (Tc) | 10V | 35mOhm @ 35.8A, 10V | 4.5V @ 1.79mA | 145 nC @ 10 V | ±20V | 7149 pF @ 400 V | - | 305W (Tc) | -40°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO247-3-41 |
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IXTA60N20X4MOSFET ULTRA X4 200V 60A TO-263 |
751 | - |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 60A (Tc) | 10V | 21mOhm @ 30A, 10V | 4.5V @ 250µA | 33 nC @ 10 V | ±20V | 2450 pF @ 25 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (IXTA) |
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G3R60MT07K750V 60M TO-247-4 G3R SIC MOSFET |
1,151 | - |
|
Datasheet | G3R™ | TO-247-4 | Tube | Active | - | SiCFET (Silicon Carbide) | 750 V | - | - | - | - | - | +20V, -10V | - | - | - | - | - | - | Through Hole | TO-247-4 |
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SPW35N60C3FKSA1MOSFET N-CH 650V 34.6A TO247-3 |
131 | - |
|
Datasheet | CoolMOS™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 34.6A (Tc) | 10V | 100mOhm @ 21.9A, 10V | 3.9V @ 1.9mA | 200 nC @ 10 V | ±20V | 4500 pF @ 25 V | - | 313W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3-1 |
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SIHG47N60E-GE3MOSFET N-CH 600V 47A TO247AC |
374 | - |
|
Datasheet | - | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 47A (Tc) | 10V | 64mOhm @ 24A, 10V | 4V @ 250µA | 220 nC @ 10 V | ±30V | 9620 pF @ 100 V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
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UF4C120053K3S1200V/53MOHM, SIC, FAST CASCODE, |
529 | - |
|
Datasheet | - | TO-247-3 | Tube | Active | N-Channel | SiCFET (Cascode SiCJFET) | 1200 V | 34A (Tc) | 12V | 67mOhm @ 20A, 12V | 6V @ 10mA | 37.8 nC @ 15 V | ±20V | 1370 pF @ 800 V | - | 263W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3 |
|
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SIHG050N60E-GE3MOSFET N-CH 600V 51A TO247AC |
392 | - |
|
Datasheet | E | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 51A (Tc) | 10V | 50mOhm @ 23A, 10V | 5V @ 250µA | 130 nC @ 10 V | ±30V | 3459 pF @ 100 V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
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NVH4L080N120SC1SICFET N-CH 1200V 29A TO247-4 |
347 | - |
|
Datasheet | - | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 29A (Tc) | 20V | 110mOhm @ 20A, 20V | 4.3V @ 5mA | 56 nC @ 20 V | +25V, -15V | 1670 pF @ 800 V | - | 170W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4L |
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IXFK140N20PMOSFET N-CH 200V 140A TO264AA |
350 | - |
|
Datasheet | HiPerFET™, Polar | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 140A (Tc) | 10V, 15V | 18mOhm @ 70A, 10V | 5V @ 4mA | 240 nC @ 10 V | ±20V | 7500 pF @ 25 V | - | 830W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-264AA (IXFK) |
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IXFH6N120PMOSFET N-CH 1200V 6A TO247AD |
451 | - |
|
Datasheet | HiPerFET™, Polar | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 6A (Tc) | 10V | 2.4Ohm @ 500mA, 10V | 5V @ 1mA | 92 nC @ 10 V | ±30V | 2830 pF @ 25 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AD (IXFH) |
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STP34NM60NMOSFET N-CH 600V 29A TO220-3 |
267 | - |
|
Datasheet | MDmesh™ II | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 29A (Tc) | 10V | 105mOhm @ 14.5A, 10V | 4V @ 250µA | 80 nC @ 10 V | ±25V | 2722 pF @ 100 V | - | 250W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220 |
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SCT2280KEGC111200V, 14A, THD, SILICON-CARBIDE |
1,664 | - |
|
Datasheet | - | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 14A (Tc) | 18V | 364mOhm @ 4A, 18V | 4V @ 1.4mA | 36 nC @ 18 V | +22V, -6V | 667 pF @ 800 V | - | 108W (Tc) | 175°C | - | - | Through Hole | TO-247N |
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STW12N120K5MOSFET N-CH 1200V 12A TO247 |
1,172 | - |
|
Datasheet | MDmesh™ K5 | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 12A (Tc) | 10V | 690mOhm @ 6A, 10V | 5V @ 100µA | 44.2 nC @ 10 V | ±30V | 1370 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
|
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IMBG65R048M1HXTMA1SILICON CARBIDE MOSFET PG-TO263- |
865 | - |
|
Datasheet | CoolSiC™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 45A (Tc) | 18V | 64mOhm @ 20.1A, 18V | 5.7V @ 6mA | 33 nC @ 18 V | +23V, -5V | 1118 pF @ 400 V | - | 183W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7-12 |
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IXTH110N25TMOSFET N-CH 250V 110A TO247 |
599 | - |
|
Datasheet | Trench | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 110A (Tc) | 10V | 24mOhm @ 55A, 10V | 4.5V @ 1mA | 157 nC @ 10 V | ±20V | 9400 pF @ 25 V | - | 694W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 (IXTH) |
FETs, MOSFETs FAQ
Common questions about selecting, comparing and sourcing FETs, MOSFETs components through Winsun (HK) Electronics.
What should I check when selecting FETs, MOSFETs components?
Compare the manufacturer part number, electrical specifications, package, operating conditions and application requirements. The product datasheet should be used to confirm technical suitability.
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Yes. Send the exact part number, manufacturer and required quantity. Winsun (HK) Electronics can assist with availability checks, quotation support and sourcing options based on your requirement.
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Yes. Our sourcing team can review shortage and obsolete-part requirements and help check available supply channels or possible alternatives when appropriate.
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Submit an RFQ with the part number, manufacturer, quantity and target delivery requirement. Our sales team will review your request and follow up with current sourcing information.
