FETs, MOSFETs

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
GP2T080A120U SIC MOSFET 1200V 80M TO-247-3L SemiQ	1,149	-	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	35A (Tc)	20V	100mOhm @ 20A, 20V	4V @ 10mA	58 nC @ 20 V	+25V, -10V	1377 pF @ 1000 V	-	188W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3
NTHL065N65S3F MOSFET N-CH 650V 46A TO247-3 onsemi	6,586	-	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	46A (Tc)	10V	65mOhm @ 23A, 10V	5V @ 4.6mA	98 nC @ 10 V	±30V	4075 pF @ 400 V	-	337W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-3
SCT2450KEHRC11 1200V, 10A, THD, SILICON-CARBIDE Rohm Semiconductor	427	-	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	10A (Tc)	18V	585mOhm @ 3A, 18V	4V @ 900µA	27 nC @ 18 V	+22V, -6V	463 pF @ 800 V	-	85W (Tc)	175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247N
STH12N120K5-2 MOSFET N-CH 1200V 12A H2PAK-2 STMicroelectronics	2,999	-	RFQ	Datasheet	MDmesh™ K5	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	1200 V	12A (Tc)	10V	690mOhm @ 6A, 10V	5V @ 100µA	44.2 nC @ 10 V	±30V	1370 pF @ 100 V	-	250W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	H2PAK-2
IXFH180N20X3 MOSFET N-CH 200V 180A TO247 Littelfuse Inc.	542	-	RFQ	Datasheet	HiPerFET™, Ultra X3	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	180A (Tc)	10V	7.5mOhm @ 90A, 10V	4.5V @ 4mA	154 nC @ 10 V	±20V	10300 pF @ 25 V	-	780W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 (IXTH)
NTBL045N065SC1 SILICON CARBIDE (SIC) MOSFET - 3 onsemi	1,688	-	RFQ	Datasheet	-	8-PowerSFN	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	73A (Tc)	15V, 18V	50mOhm @ 25A, 18V	4.3V @ 8mA	105 nC @ 18 V	+22.6V, -8V	1870 pF @ 325 V	-	348W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	8-HPSOF
IXTK150N15P MOSFET N-CH 150V 150A TO264 Littelfuse Inc.	305	-	RFQ	Datasheet	Polar	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	150 V	150A (Tc)	10V	13mOhm @ 500mA, 10V	5V @ 250µA	190 nC @ 10 V	±20V	5800 pF @ 25 V	-	714W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-264 (IXTK)
IPW65R029CFD7XKSA1 MOSFET N-CH 650V 69A TO247-3 Infineon Technologies	154	-	RFQ	Datasheet	CoolMOS™	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	69A (Tc)	-	29mOhm @ 35.8A, 10V	4.5V @ 1.79mA	145 nC @ 10 V	±20V	7149 pF @ 400 V	-	305W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO247-3
IXFH50N85X MOSFET N-CH 850V 50A TO247 Littelfuse Inc.	1,058	-	RFQ	Datasheet	HiPerFET™, Ultra X	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	850 V	50A (Tc)	10V	105mOhm @ 500mA, 10V	5.5V @ 4mA	152 nC @ 10 V	±30V	4480 pF @ 25 V	-	890W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 (IXTH)
IPW65R041CFDFKSA2 MOSFET N-CH 650V 68.5A TO247-3 Infineon Technologies	611	-	RFQ	Datasheet	CoolMOS™ CFD2	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	68.5A (Tc)	10V	41mOhm @ 33.1A, 10V	4.5V @ 3.3mA	300 nC @ 10 V	±20V	8400 pF @ 100 V	-	500W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO247-3
IXFH120N25X3 MOSFET N-CH 250V 120A TO247 Littelfuse Inc.	165	-	RFQ	Datasheet	HiPerFET™, Ultra X3	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	250 V	120A (Tc)	10V	12mOhm @ 60A, 10V	4.5V @ 4mA	122 nC @ 10 V	±20V	7870 pF @ 25 V	-	520W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 (IXTH)
IXFX360N10T MOSFET N-CH 100V 360A PLUS247-3 Littelfuse Inc.	298	-	RFQ	Datasheet	HiPerFET™, Trench	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	360A (Tc)	10V	2.9mOhm @ 100A, 10V	5V @ 3mA	525 nC @ 10 V	±20V	33000 pF @ 25 V	-	1250W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PLUS247™-3
NTBG080N120SC1 SICFET N-CH 1200V 30A D2PAK-7 onsemi	1,035	-	RFQ	Datasheet	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	30A (Tc)	20V	110mOhm @ 20A, 20V	4.3V @ 5mA	56 nC @ 20 V	+25, -15V	1154 pF @ 800 V	-	179W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK-7
IXTA86N20X4 MOSFET 200V 86A N-CH ULTRA TO263 Littelfuse Inc.	597	-	RFQ	Datasheet	Ultra X4	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	86A (Tc)	10V	13mOhm @ 43A, 10V	4.5V @ 250µA	70 nC @ 10 V	±20V	2250 pF @ 25 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)
IXTA15N50L2 MOSFET N-CH 500V 15A TO263 IXYS	134	-	RFQ	Datasheet	Linear L2™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	15A (Tc)	10V	480mOhm @ 7.5A, 10V	4.5V @ 250µA	123 nC @ 10 V	±20V	4080 pF @ 25 V	-	300W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263AA
NVBG075N065SC1 SIC MOS D2PAK-7L 650V onsemi	3,116	-	RFQ	Datasheet	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	37A (Tc)	15V, 18V	85mOhm @ 15A, 18V	4.3V @ 5mA	59 nC @ 18 V	-	1191 pF @ 325 V	-	139W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	D2PAK-7
IXFH40N85X MOSFET N-CH 850V 40A TO247 Littelfuse Inc.	368	-	RFQ	Datasheet	HiPerFET™, Ultra X	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	850 V	40A (Tc)	10V	145mOhm @ 500mA, 10V	5.5V @ 4mA	98 nC @ 10 V	±30V	3700 pF @ 25 V	-	860W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247
UF3C120080K3S SICFET N-CH 1200V 33A TO247-3 Qorvo	16,414	-	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Cascode SiCJFET)	1200 V	33A (Tc)	12V	100mOhm @ 20A, 12V	6V @ 10mA	51 nC @ 15 V	±25V	1500 pF @ 100 V	-	254.2W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3
UF3C120080K4S SICFET N-CH 1200V 33A TO247-4 Qorvo	16,390	-	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Cascode SiCJFET)	1200 V	33A (Tc)	12V	100mOhm @ 20A, 12V	6V @ 10mA	43 nC @ 12 V	±25V	1500 pF @ 100 V	-	254.2W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4
APT30M70BVRG MOSFET N-CH 300V 48A TO247 Microchip Technology	101	-	RFQ	Datasheet	POWER MOS V®	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	300 V	48A (Tc)	10V	70mOhm @ 500mA, 10V	4V @ 1mA	225 nC @ 10 V	±30V	5870 pF @ 25 V	-	370W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 [B]

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