FETs, MOSFETs

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
IPA80R1K4P7XKSA1 MOSFET N-CH 800V 4A TO220-3F Infineon Technologies	995	-	RFQ	Datasheet	CoolMOS™	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	4A (Tc)	10V	1.4Ohm @ 1.4A, 10V	3.5V @ 700µA	10 nC @ 10 V	±20V	250 pF @ 500 V	-	24W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-3-31
IPP80R1K4P7XKSA1 MOSFET N-CH 800V 4A TO220-3 Infineon Technologies	499	-	RFQ	Datasheet	CoolMOS™	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	4A (Tc)	10V	1.4Ohm @ 1.4A, 10V	3.5V @ 70µA	10 nC @ 10 V	±20V	250 pF @ 500 V	-	32W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-3
BSC020N03LSGATMA1 MOSFET N-CH 30V 28A/100A TDSON Infineon Technologies	17,249	-	RFQ	Datasheet	OptiMOS™	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	30 V	28A (Ta), 100A (Tc)	4.5V, 10V	2mOhm @ 30A, 10V	2.2V @ 250µA	93 nC @ 10 V	±20V	7200 pF @ 15 V	-	2.5W (Ta), 96W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TDSON-8-1
IPD60R600P6ATMA1 MOSFET N-CH 600V 7.3A TO252-3 Infineon Technologies	4,896	-	RFQ	Datasheet	CoolMOS™ P6	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	600 V	7.3A (Tc)	10V	600mOhm @ 2.4A, 10V	4.5V @ 200µA	12 nC @ 10 V	±20V	557 pF @ 100 V	-	63W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TO252-3
IPAN60R360PFD7SXKSA1 MOSFET N-CH 650V 10A TO220 Infineon Technologies	534	-	RFQ	Datasheet	CoolMOS™PFD7	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	10A (Tc)	10V	360mOhm @ 2.9A, 10V	4.5V @ 140µA	12.7 nC @ 10 V	±20V	534 pF @ 400 V	-	23W (Tc)	-40°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-FP
IPD18DP10LMATMA1 TRENCH >=100V PG-TO252-3 Infineon Technologies	2,081	-	RFQ	Datasheet	OptiMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	100 V	2.5A (Ta), 13.9A (Tc)	4.5V, 10V	178mOhm @ 13A, 10V	2V @ 1.04mA	42 nC @ 10 V	±20V	2100 pF @ 50 V	-	3W (Ta), 83W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO252-3
ISZ0602NLSATMA1 MOSFET N-CH 80V 12A/64A TSDSON Infineon Technologies	9,817	-	RFQ	Datasheet	OptiMOS™ 5	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	80 V	12A (Ta), 64A (Tc)	4.5V, 10V	7.8mOhm @ 20A, 10V	2.3V @ 29µA	29 nC @ 10 V	±20V	1860 pF @ 40 V	-	2.1W (Ta), 60W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TSDSON-8-26
ISZ019N03L5SATMA1 MOSFET N-CH 30V 22A/40A TSDSON Infineon Technologies	7,128	-	RFQ	Datasheet	OptiMOS™	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	30 V	22A (Ta), 40A (Tc)	4.5V, 10V	1.9mOhm @ 20A, 10V	2V @ 250µA	44 nC @ 10 V	±20V	2800 pF @ 15 V	-	-	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TSDSON-8-FL
IPD096N08N3GATMA1 MOSFET N-CH 80V 73A TO252-3 Infineon Technologies	2,463	-	RFQ	Datasheet	OptiMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	80 V	73A (Tc)	6V, 10V	9.6mOhm @ 46A, 10V	3.5V @ 46µA	35 nC @ 10 V	±20V	2410 pF @ 40 V	-	100W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO252-3
IPD60R600C6ATMA1 MOSFET N-CH 600V 7.3A TO252-3 Infineon Technologies	8,732	-	RFQ	Datasheet	CoolMOS™ C6	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	600 V	7.3A (Tc)	10V	600mOhm @ 2.4A, 10V	3.5V @ 200µA	20.5 nC @ 10 V	±20V	440 pF @ 100 V	-	63W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TO252-3

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FETs, MOSFETs FAQ

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