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FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

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Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
BSC020N03MSGATMA1 Infineon Technologies

BSC020N03MSGATMA1

MOSFET N-CH 30V 25A/100A TDSON

Infineon Technologies

31,901 -
Datasheet OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 25A (Ta), 100A (Tc) 4.5V, 10V 2mOhm @ 30A, 10V 2V @ 250µA 124 nC @ 10 V ±20V 9600 pF @ 15 V - 2.5W (Ta), 96W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TDSON-8-1
SPD04N50C3ATMA1 Infineon Technologies

SPD04N50C3ATMA1

MOSFET N-CH 500V 4.5A TO252-3

Infineon Technologies

4,534 -
Datasheet CoolMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 500 V 4.5A (Tc) 10V 950mOhm @ 2.8A, 10V 3.9V @ 200µA 22 nC @ 10 V ±20V 470 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO252-3
IRFR1010ZTRPBF Infineon Technologies

IRFR1010ZTRPBF

MOSFET N-CH 55V 42A DPAK

Infineon Technologies

6,063 -
Datasheet HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 10V 7.5mOhm @ 42A, 10V 4V @ 100µA 95 nC @ 10 V ±20V 2840 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA (DPAK)
IPN80R600P7ATMA1 Infineon Technologies

IPN80R600P7ATMA1

MOSFET N-CH 800V 8A SOT223

Infineon Technologies

2,007 -
Datasheet CoolMOS™ P7 TO-261-4, TO-261AA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 800 V 8A (Tc) 10V 600mOhm @ 3.4A, 10V 3.5V @ 170µA 20 nC @ 10 V ±20V 570 pF @ 500 V - 7.4W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-SOT223
IRFB7540PBF Infineon Technologies

IRFB7540PBF

MOSFET N-CH 60V 110A TO220

Infineon Technologies

203 -
Datasheet HEXFET®, StrongIRFET™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 60 V 110A (Tc) 6V, 10V 5.1mOhm @ 65A, 10V 3.7V @ 100µA 130 nC @ 10 V ±20V 4555 pF @ 25 V - 160W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220
IPD50N06S2L13ATMA2 Infineon Technologies

IPD50N06S2L13ATMA2

MOSFET N-CH 55V 50A TO252-31

Infineon Technologies

4,787 -
Datasheet OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 55 V 50A (Tc) 4.5V, 10V 12.7mOhm @ 34A, 10V 2V @ 80µA 69 nC @ 10 V ±20V 1800 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3-11
IPB057N06NATMA1 Infineon Technologies

IPB057N06NATMA1

MOSFET N-CH 60V 17A/45A D2PAK

Infineon Technologies

395 -
Datasheet OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 17A (Ta), 45A (Tc) 6V, 10V 5.7mOhm @ 45A, 10V 2.8V @ 36µA 27 nC @ 10 V ±20V 2000 pF @ 30 V - 3W (Ta), 83W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3
IPD35N12S3L24ATMA1 Infineon Technologies

IPD35N12S3L24ATMA1

MOSFET N-CH 120V 35A TO252-3

Infineon Technologies

8,588 -
Datasheet OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 120 V 35A (Tc) 4.5V, 10V 24mOhm @ 35A, 10V 2.4V @ 39µA 39 nC @ 10 V ±20V 2700 pF @ 25 V - 71W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3
IPAN60R280PFD7SXKSA1 Infineon Technologies

IPAN60R280PFD7SXKSA1

CONSUMER PG-TO220-3

Infineon Technologies

2,779 -
Datasheet OptiMOS™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 280mOhm @ 3.6A, 10V 4.5V @ 180µA 15.3 nC @ 10 V ±20V 656 pF @ 400 V - 24W (Tc) -40°C ~ 150°C (TJ) - - Through Hole PG-TO220-FP
IRFIZ44NPBF Infineon Technologies

IRFIZ44NPBF

MOSFET N-CH 55V 31A TO220AB FP

Infineon Technologies

165 -
Datasheet HEXFET® TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 55 V 31A (Tc) 10V 24mOhm @ 17A, 10V 4V @ 250µA 65 nC @ 10 V ±20V 1300 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB Full-Pak
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WINSUN SOURCING SUPPORT

Need Help Sourcing FETs, MOSFETs?

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FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.