FETs, MOSFETs

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
IPD30N08S2L21ATMA1 MOSFET N-CH 75V 30A TO252-3 Infineon Technologies	19,366	-	RFQ	Datasheet	OptiMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	75 V	30A (Tc)	4.5V, 10V	20.5mOhm @ 25A, 10V	2V @ 80µA	72 nC @ 10 V	±20V	1650 pF @ 25 V	-	136W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO252-3-11
SPA06N80C3XKSA1 MOSFET N-CH 800V 6A TO220-FP Infineon Technologies	11,995	-	RFQ	Datasheet	CoolMOS™	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	6A (Tc)	10V	900mOhm @ 3.8A, 10V	3.9V @ 250µA	41 nC @ 10 V	±20V	785 pF @ 100 V	-	39W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-3-31
IRFH5210TRPBF MOSFET N-CH 100V 10A/55A 8PQFN Infineon Technologies	8,349	-	RFQ	Datasheet	HEXFET®	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	100 V	10A (Ta), 55A (Tc)	10V	14.9mOhm @ 33A, 10V	4V @ 100µA	59 nC @ 10 V	±20V	2570 pF @ 25 V	-	3.6W (Ta), 104W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-PQFN (5x6)
IPI086N10N3GXKSA1 MOSFET N-CH 100V 80A TO262-3 Infineon Technologies	242	-	RFQ	Datasheet	OptiMOS™	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	80A (Tc)	6V, 10V	8.6mOhm @ 73A, 10V	3.5V @ 75µA	55 nC @ 10 V	±20V	3980 pF @ 50 V	-	125W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO262-3
IPD65R660CFDAATMA1 MOSFET N-CH 650V 6A TO252-3 Infineon Technologies	4,536	-	RFQ	Datasheet	CoolMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	650 V	6A (Tc)	10V	660mOhm @ 3.22A, 10V	4.5V @ 214.55µA	20 nC @ 10 V	±20V	543 pF @ 100 V	-	62.5W (Tc)	-40°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	PG-TO252-3
IPD65R380E6ATMA1 MOSFET N-CH 650V 10.6A TO252-3 Infineon Technologies	477	-	RFQ	Datasheet	CoolMOS™ E6	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	650 V	10.6A (Tc)	10V	380mOhm @ 3.2A, 10V	3.5V @ 320µA	39 nC @ 10 V	±20V	710 pF @ 100 V	-	83W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TO252-3
BSP135H6906XTSA1 MOSFET N-CH 600V 120MA SOT223-4 Infineon Technologies	14,161	-	RFQ	Datasheet	SIPMOS™	TO-261-4, TO-261AA	Tape & Reel (TR)	Active	N-Channel, Depletion Mode	MOSFET (Metal Oxide)	600 V	120mA (Ta)	0V, 10V	45Ohm @ 120mA, 10V	1V @ 94µA	4.9 nC @ 5 V	±20V	146 pF @ 25 V	-	1.8W (Ta)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	PG-SOT223-4
IRFH5250TRPBF MOSFET N-CH 25V 45A/100A 8PQFN Infineon Technologies	9,000	-	RFQ	Datasheet	HEXFET®	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	25 V	45A (Ta), 100A (Tc)	4.5V, 10V	1.15mOhm @ 50A, 10V	2.35V @ 150µA	110 nC @ 10 V	±20V	7174 pF @ 13 V	-	3.6W (Ta), 160W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-PQFN (5x6)
IPA60R380P6XKSA1 MOSFET N-CH 600V 10.6A TO220-FP Infineon Technologies	437	-	RFQ	Datasheet	CoolMOS™ P6	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	10.6A (Tc)	10V	380mOhm @ 3.8A, 10V	4.5V @ 320µA	19 nC @ 10 V	±20V	877 pF @ 100 V	-	31W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-FP
IPA80R600P7XKSA1 MOSFET N-CHANNEL 800V 8A TO220 Infineon Technologies	398	-	RFQ	Datasheet	CoolMOS™ P7	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	8A (Tc)	10V	600mOhm @ 3.4A, 10V	3.5V @ 170µA	20 nC @ 10 V	±20V	570 pF @ 500 V	-	28W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-FP

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FETs, MOSFETs FAQ

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Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

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