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FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

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Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IRFR2307ZTRLPBF Infineon Technologies

IRFR2307ZTRLPBF

MOSFET N-CH 75V 42A DPAK

Infineon Technologies

7,703 -
Datasheet HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 75 V 42A (Tc) 10V 16mOhm @ 32A, 10V 4V @ 100µA 75 nC @ 10 V ±20V 2190 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA (DPAK)
IPD11DP10NMATMA1 Infineon Technologies

IPD11DP10NMATMA1

TRENCH >=100V PG-TO252-3

Infineon Technologies

3,796 -
Datasheet OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 100 V 3.4A (Ta), 22A (Tc) 10V 111mOhm @ 18A, 10V 4V @ 1.7mA 74 nC @ 10 V ±20V 3200 pF @ 50 V - 3W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3
IPD028N06NF2SATMA1 Infineon Technologies

IPD028N06NF2SATMA1

TRENCH 40<-<100V

Infineon Technologies

1,490 -
Datasheet StrongIRFET™2 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 24A (Ta), 139A (Tc) 6V, 10V 2.85mOhm @ 70A, 10V 3.3V @ 80µA 102 nC @ 10 V ±20V 4600 pF @ 30 V - 3W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3
IPP050N10NF2SAKMA1 Infineon Technologies

IPP050N10NF2SAKMA1

TRENCH >=100V

Infineon Technologies

917 -
Datasheet StrongIRFET™ 2 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 19.4A (Ta), 110A (Tc) 6V, 10V 5mOhm @ 60A, 10V 3.8V @ 84µA 76 nC @ 10 V ±20V 3600 pF @ 50 V - 3.8W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3
IPB80N06S4L07ATMA2 Infineon Technologies

IPB80N06S4L07ATMA2

MOSFET N-CH 60V 80A TO263-3

Infineon Technologies

1,423 -
Datasheet OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 4.5V, 10V 6.7mOhm @ 80A, 10V 2.2V @ 40µA 75 nC @ 10 V ±16V 5680 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO263-3-2
IPA95R1K2P7XKSA1 Infineon Technologies

IPA95R1K2P7XKSA1

MOSFET N-CH 950V 6A TO220

Infineon Technologies

484 -
Datasheet CoolMOS™ P7 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 950 V 6A (Tc) 10V 1.2Ohm @ 2.7A, 10V 3.5V @ 140µA 15 nC @ 10 V ±20V 478 pF @ 400 V - 27W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-FP
IRFB7537PBF Infineon Technologies

IRFB7537PBF

MOSFET N-CH 60V 173A TO220AB

Infineon Technologies

3,801 -
Datasheet HEXFET®, StrongIRFET™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 60 V 173A (Tc) 6V, 10V 3.3mOhm @ 100A, 10V 3.7V @ 150µA 210 nC @ 10 V ±20V 7020 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
IRFH7004TRPBF Infineon Technologies

IRFH7004TRPBF

MOSFET N-CH 40V 100A 8PQFN

Infineon Technologies

3,690 -
Datasheet HEXFET®, StrongIRFET™ 8-VQFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 6V, 10V 1.4mOhm @ 100A, 10V 3.9V @ 150µA 194 nC @ 10 V ±20V 6419 pF @ 25 V - 156W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PQFN (5x6)
SPD04N80C3ATMA1 Infineon Technologies

SPD04N80C3ATMA1

MOSFET N-CH 800V 4A TO252-3

Infineon Technologies

10,800 -
Datasheet CoolMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 800 V 4A (Tc) 10V 1.3Ohm @ 2.5A, 10V 3.9V @ 240µA 31 nC @ 10 V ±20V 570 pF @ 100 V - 63W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO252-3
IPD055N08NF2SATMA1 Infineon Technologies

IPD055N08NF2SATMA1

MOSFET

Infineon Technologies

1,240 -
Datasheet StrongIRFET™ 2 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 17A (Ta), 98A (Tc) 6V, 10V 5.5mOhm @ 60A, 10V 3.8V @ 55µA 54 nC @ 10 V ±20V 2500 pF @ 40 V - 3W (Ta), 107W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3
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WINSUN SOURCING SUPPORT

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FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.