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FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

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Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
BSC009NE2LSATMA1 Infineon Technologies

BSC009NE2LSATMA1

MOSFET N-CH 25V 41A/100A TDSON

Infineon Technologies

48,686 -
Datasheet OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 25 V 41A (Ta), 100A (Tc) 4.5V, 10V 0.9mOhm @ 30A, 10V 2.2V @ 250µA 126 nC @ 10 V ±20V 5800 pF @ 12 V - 2.5W (Ta), 96W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TDSON-8-7
BSO301SPHXUMA1 Infineon Technologies

BSO301SPHXUMA1

MOSFET P-CH 30V 12.6A 8DSO

Infineon Technologies

7,777 -
Datasheet OptiMOS™ 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 12.6A (Ta) 4.5V, 10V 8mOhm @ 14.9A, 10V 2V @ 250µA 136 nC @ 10 V ±20V 5890 pF @ 25 V - 1.79W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PG-DSO-8
IPB014N04NF2SATMA1 Infineon Technologies

IPB014N04NF2SATMA1

TRENCH <= 40V

Infineon Technologies

545 -
Datasheet StrongIRFET™2 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 38A (Ta), 191A (Tc) 6V, 10V 1.45mOhm @ 100A, 10V 3.4V @ 126µA 159 nC @ 10 V ±20V 7500 pF @ 20 V - 3.8W (Ta), 188W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3
IRF6775MTRPBF Infineon Technologies

IRF6775MTRPBF

MOSFET N-CH 150V 4.9A DIRECTFET

Infineon Technologies

13,023 -
Datasheet HEXFET® DirectFET™ Isometric MZ Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 4.9A (Ta), 28A (Tc) 10V 56mOhm @ 5.6A, 10V 5V @ 100µA 36 nC @ 10 V ±20V 1411 pF @ 25 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount DIRECTFET™ MZ
IPP12CN10LGXKSA1 Infineon Technologies

IPP12CN10LGXKSA1

MOSFET N-CH 100V 69A TO220-3

Infineon Technologies

107 -
Datasheet OptiMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 69A (Tc) 4.5V, 10V 12mOhm @ 69A, 10V 2.4V @ 83µA 58 nC @ 10 V ±20V 5600 pF @ 50 V - 125W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3
IRFU4615PBF Infineon Technologies

IRFU4615PBF

MOSFET N-CH 150V 33A IPAK

Infineon Technologies

6,390 -
Datasheet HEXFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Last Time Buy N-Channel MOSFET (Metal Oxide) 150 V 33A (Tc) 10V 42mOhm @ 21A, 10V 5V @ 100µA 26 nC @ 10 V ±20V 1750 pF @ 50 V - 144W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK (TO-251AA)
BSC014N04LSTATMA1 Infineon Technologies

BSC014N04LSTATMA1

MOSFET N-CH 40V 33A/100A TDSON

Infineon Technologies

5,834 -
Datasheet OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 33A (Ta), 100A (Tc) 4.5V, 10V 1.4mOhm @ 50A, 10V 2V @ 250µA 85 nC @ 10 V ±20V 6020 pF @ 20 V - 3W (Ta), 115W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TDSON-8 FL
BSC0500NSIATMA1 Infineon Technologies

BSC0500NSIATMA1

MOSFET N-CH 30V 35A/100A TDSON

Infineon Technologies

9,020 -
Datasheet OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 35A (Ta), 100A (Tc) 4.5V, 10V 1.3mOhm @ 30A, 10V 2V @ 250µA 52 nC @ 10 V ±20V 3300 pF @ 15 V - 2.5W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TDSON-8-6
IPB037N06N3GATMA1 Infineon Technologies

IPB037N06N3GATMA1

MOSFET N-CH 60V 90A D2PAK

Infineon Technologies

3,275 -
Datasheet OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 10V 3.7mOhm @ 90A, 10V 4V @ 90µA 98 nC @ 10 V ±20V 11000 pF @ 30 V - 188W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3
IPP60R280P7XKSA1 Infineon Technologies

IPP60R280P7XKSA1

MOSFET N-CH 600V 12A TO220-3

Infineon Technologies

370 -
Datasheet CoolMOS™ P7 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 280mOhm @ 3.8A, 10V 4V @ 190µA 18 nC @ 10 V ±20V 761 pF @ 400 V - 53W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
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WINSUN SOURCING SUPPORT

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FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.