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FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

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Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IRFR3711TRPBF Infineon Technologies

IRFR3711TRPBF

MOSFET N-CH 20V 100A DPAK

Infineon Technologies

8,144 -
Datasheet HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 20 V 100A (Tc) 4.5V, 10V 6.5mOhm @ 15A, 10V 3V @ 250µA 44 nC @ 4.5 V ±20V 2980 pF @ 10 V - 2.5W (Ta), 120W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252AA (DPAK)
IPU80R1K2P7AKMA1 Infineon Technologies

IPU80R1K2P7AKMA1

MOSFET N-CH 800V 4.5A TO251-3

Infineon Technologies

2,772 -
Datasheet CoolMOS™ P7 TO-251-3 Short Leads, IPAK, TO-251AA Bulk Obsolete N-Channel MOSFET (Metal Oxide) 800 V 4.5A (Tc) 10V 1.2Ohm @ 1.7A, 10V 3.5V @ 80µA 11 nC @ 10 V ±20V 300 pF @ 500 V - 37W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO251-3
IPS80R1K2P7AKMA1 Infineon Technologies

IPS80R1K2P7AKMA1

MOSFET N-CH 800V 4.5A TO251-3

Infineon Technologies

3,425 -
Datasheet CoolMOS™ P7 TO-251-3 Stub Leads, IPAK Bulk Obsolete N-Channel MOSFET (Metal Oxide) 800 V 4.5A (Tc) 10V 1.2Ohm @ 1.7A, 10V 3.5V @ 80µA 11 nC @ 10 V ±20V 300 pF @ 500 V - 37W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO251-3-342
IRL3103STRLPBF Infineon Technologies

IRL3103STRLPBF

MOSFET N-CH 30V 64A D2PAK

Infineon Technologies

6,445 -
Datasheet HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 64A (Tc) 4.5V, 10V 12mOhm @ 34A, 10V 1V @ 250µA 33 nC @ 4.5 V ±16V 1650 pF @ 25 V - 94W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
SPS04N60C3AKMA1 Infineon Technologies

SPS04N60C3AKMA1

N-CHANNEL POWER MOSFET

Infineon Technologies

101,415 -
Datasheet * - Bulk Active - - - - - - - - - - - - - - - - -
IPU95R2K0P7AKMA1 Infineon Technologies

IPU95R2K0P7AKMA1

MOSFET N-CH 950V 4A TO251-3

Infineon Technologies

9,514 -
Datasheet CoolMOS™ P7 TO-251-3 Short Leads, IPAK, TO-251AA Bulk Obsolete N-Channel MOSFET (Metal Oxide) 950 V 4A (Tc) 10V 2Ohm @ 1.7A, 10V 3.5V @ 80µA 10 nC @ 10 V ±20V 330 pF @ 400 V - 37W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO251-3
IPI084N06L3GXKSA1 Infineon Technologies

IPI084N06L3GXKSA1

MOSFET N-CH 60V 50A TO262-3

Infineon Technologies

6,054 -
Datasheet OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Bulk Obsolete N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4.5V, 10V 8.4mOhm @ 50A, 10V 2.2V @ 34µA 29 nC @ 4.5 V ±20V 4900 pF @ 30 V - 79W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3-1
BSC882N03MSG Infineon Technologies

BSC882N03MSG

N-CHANNEL POWER MOSFET

Infineon Technologies

23,996 -
Datasheet OptiMOS™ 3 8-PowerTDFN Bulk Active N-Channel MOSFET (Metal Oxide) 34 V 22A (Ta), 100A (Tc) 4.5V, 10V 2.6mOhm @ 30A, 10V 2V @ 250µA 55 nC @ 10 V ±20V 4300 pF @ 15 V - 2.5W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TSDSON-8
IRLML2402TRPBF Infineon Technologies

IRLML2402TRPBF

MOSFET N-CH 20V 1.2A SOT23

Infineon Technologies

11,869 -
Datasheet HEXFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 20 V 1.2A (Ta) 2.7V, 4.5V 250mOhm @ 930mA, 4.5V 700mV @ 250µA (Min) 3.9 nC @ 4.5 V ±12V 110 pF @ 15 V - 540mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount Micro3™/SOT-23
SPP02N60S5 Infineon Technologies

SPP02N60S5

N-CHANNEL POWER MOSFET

Infineon Technologies

4,500 -
Datasheet CoolMOS™ TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 600 V 1.8A (Tc) 10V 3Ohm @ 1.1A, 10V 5.5V @ 80µA 9.5 nC @ 10 V ±20V 240 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-1
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WINSUN SOURCING SUPPORT

Need Help Sourcing FETs, MOSFETs?

Send the target part number, manufacturer, specifications and quantity. Winsun (HK) Electronics can assist with availability checks, quotation support, shortage sourcing and alternative-part options when appropriate.

Availability and lead-time support BOM, shortage and alternative sourcing
FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.