Welcome to Winsun (HK) Electronics Limited!
+86-(0755)8253 3846
FILTERED PRODUCT SELECTION

FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

Parametric Selection Filter options by technical parameters
Stock & Datasheets Review availability and technical references
RFQ & BOM Support Send your target MPN, quantity or BOM
Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IPB80N04S3H4ATMA1 Infineon Technologies

IPB80N04S3H4ATMA1

MOSFET N-CH 40V 80A TO263-3

Infineon Technologies

6,795 -
Datasheet OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 4.5mOhm @ 80A, 10V 4V @ 65µA 60 nC @ 10 V ±20V 3900 pF @ 25 V - 115W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3-2
IPP139N08N3G Infineon Technologies

IPP139N08N3G

N-CHANNEL POWER MOSFET

Infineon Technologies

11,261 -
Datasheet OptiMOS™ TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 80 V 45A (Tc) 6V, 10V 13.9mOhm @ 45A, 10V 3.5V @ 33µA 25 nC @ 10 V ±20V 1730 pF @ 40 V - 79W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3
BUZ31H3046XKSA1 Infineon Technologies

BUZ31H3046XKSA1

MOSFET N-CH 200V 14.5A TO262-3

Infineon Technologies

3,700 -
Datasheet SIPMOS® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 200 V 14.5A (Tc) 5V 200mOhm @ 9A, 5V 4V @ 1mA - ±20V 1120 pF @ 25 V - 95W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO262-3-1
BSO051N03MS G Infineon Technologies

BSO051N03MS G

MOSFET N-CH 30V 14A 8DSO

Infineon Technologies

2,168 -
Datasheet OptiMOS™ 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta) 4.5V, 10V 5.1mOhm @ 18A, 10V 2V @ 250µA 55 nC @ 10 V ±20V 4300 pF @ 15 V - 1.56W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PG-DSO-8
SPD30N03S2L07GBTMA1 Infineon Technologies

SPD30N03S2L07GBTMA1

MOSFET N-CH 30V 30A TO252-3

Infineon Technologies

3,821 -
Datasheet OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 30A (Tc) 4.5V, 10V 6.7mOhm @ 30A, 10V 2V @ 85µA 68 nC @ 10 V ±20V 2530 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3
IPS60R400CEAKMA1 Infineon Technologies

IPS60R400CEAKMA1

CONSUMER

Infineon Technologies

6,004 -
Datasheet CoolMOS™ CE TO-251-3 Short Leads, IPAK, TO-251AA Bulk Obsolete N-Channel MOSFET (Metal Oxide) 600 V 14.7A (Tj) 10V 400mOhm @ 3.8A, 10V 3.5V @ 300µA 32 nC @ 10 V ±20V 700 pF @ 100 V - 112W (Tc) -40°C ~ 150°C (TJ) - - Through Hole PG-TO251-3
SPA07N60C2 Infineon Technologies

SPA07N60C2

N-CHANNEL POWER MOSFET

Infineon Technologies

1,403 -
Datasheet CoolMOS™ TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 600 V 7.3A (Tc) 10V 600mOhm @ 4.6A, 10V 5.5V @ 350µA 35 nC @ 10 V ±20V 970 pF @ 25 V - 32W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-31
IPA60R280P7SE8228XKSA1 Infineon Technologies

IPA60R280P7SE8228XKSA1

MOSFET N-CH 600V 12A TO220

Infineon Technologies

6,774 -
Datasheet CoolMOS™ P7 TO-220-3 Full Pack Bulk Last Time Buy N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 280mOhm @ 3.8A, 10V 4V @ 190µA 18 nC @ 10 V ±20V 761 pF @ 400 V - 24W (Tc) -40°C ~ 150°C (TJ) - - Through Hole PG-TO220-FP
IPI100N04S4H2AKSA1 Infineon Technologies

IPI100N04S4H2AKSA1

MOSFET N-CH 40V 100A TO262-3

Infineon Technologies

8,681 -
Datasheet OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 2.7mOhm @ 100A, 10V 4V @ 70µA 90 nC @ 10 V ±20V 7180 pF @ 25 V - 115W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
IPP90N06S404AKSA1 Infineon Technologies

IPP90N06S404AKSA1

MOSFET N-CH 60V 90A TO220-3

Infineon Technologies

5,970 -
Datasheet OptiMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 10V 4mOhm @ 90A, 10V 4V @ 90µA 128 nC @ 10 V ±20V 10400 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
Total 6460 Record«Prev1... 111112113114115116117118...646Next»
WINSUN SOURCING SUPPORT

Need Help Sourcing FETs, MOSFETs?

Send the target part number, manufacturer, specifications and quantity. Winsun (HK) Electronics can assist with availability checks, quotation support, shortage sourcing and alternative-part options when appropriate.

Availability and lead-time support BOM, shortage and alternative sourcing
FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.