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FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

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Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IPTC014N10NM5ATMA1 Infineon Technologies

IPTC014N10NM5ATMA1

OPTIMOS 5 POWER MOSFET

Infineon Technologies

8,273 -
Datasheet OptiMOS™ 5 16-PowerSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 37A (Ta), 365A (Tc) 6V, 10V 1.4mOhm @ 150A, 10V 3.8V @ 280µA 211 nC @ 10 V ±20V 16000 pF @ 50 V - 3.8W (Ta), 375W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-HDSOP-16-2
IPW60R070C6FKSA1 Infineon Technologies

IPW60R070C6FKSA1

MOSFET N-CH 600V 53A TO247-3

Infineon Technologies

2,427 -
Datasheet CoolMOS™ TO-247-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 53A (Tc) 10V 70mOhm @ 25.8A, 10V 3.5V @ 1.72mA 170 nC @ 10 V ±20V 3800 pF @ 100 V - 391W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-3-1
IMZA65R020M2HXKSA1 Infineon Technologies

IMZA65R020M2HXKSA1

SILICON CARBIDE MOSFET

Infineon Technologies

8,459 -
Datasheet CoolSiC™ Gen 2 TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 83A (Tc) 15V, 20V 18mOhm @ 46.9A, 20V 5.6V @ 9.5mA 57 nC @ 18 V +23V, -7V 2038 pF @ 400 V - 273W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-4-8
IMBG65R007M2HXTMA1 Infineon Technologies

IMBG65R007M2HXTMA1

SICFET N-CH 650V 238A TO263-7

Infineon Technologies

7,676 -
Datasheet CoolSiC™ Gen 2 TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 650 V 238A (Tc) 15V, 20V 8.5mOhm @ 146.3A, 18V 5.6V @ 2.97mA 179 nC @ 18 V +23V, -7V 6359 pF @ 400 V - 789W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7-12
IMZA65R007M2HXKSA1 Infineon Technologies

IMZA65R007M2HXKSA1

SILICON CARBIDE MOSFET

Infineon Technologies

8,463 -
Datasheet CoolSiC™ TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 210A (Tc) 15V, 20V 6.1mOhm @ 146.3A, 20V 5.6V @ 29.7mA 179 nC @ 18 V +23V, -7V 6359 pF @ 400 V - 625W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-4-U02
IRFU024NPBFAKLA1 Infineon Technologies

IRFU024NPBFAKLA1

MOSFET N-CH

Infineon Technologies

7,668 -
Datasheet HEXFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Last Time Buy N-Channel MOSFET (Metal Oxide) 55 V 17A (Tc) 10V 75mOhm @ 10A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 370 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK (TO-251AA)
IAUCN04S7L005ATMA1 Infineon Technologies

IAUCN04S7L005ATMA1

MOSFET_(20V 40V)

Infineon Technologies

7,891 -
Datasheet OptiMOS™ 7 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 430A (Tj) 4.5V, 10V 0.52mOhm @ 88A, 10V 1.8V @ 95µA 141 nC @ 10 V ±16V 9415 pF @ 20 V - 179W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TDSON-8-43
IPU80R600P7AKMA1 Infineon Technologies

IPU80R600P7AKMA1

MOSFET N-CH 800V 8A TO251-3

Infineon Technologies

3,585 -
Datasheet CoolMOS™ P7 TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) 800 V 8A (Tc) 10V 600mOhm @ 3.4A, 10V 3.5V @ 170µA 20 nC @ 10 V ±20V 570 pF @ 500 V - 60W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO251-3
IRL3705NPBF Infineon Technologies

IRL3705NPBF

MOSFET N-CH 55V 89A TO220AB

Infineon Technologies

6,830 -
Datasheet HEXFET® TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 55 V 89A (Tc) 4V, 10V 10mOhm @ 46A, 10V 2V @ 250µA 98 nC @ 5 V ±16V 3600 pF @ 25 V - 170W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
SPP11N60C3XKSA1 Infineon Technologies

SPP11N60C3XKSA1

MOSFET N-CH 650V 11A TO220-3

Infineon Technologies

4 -
Datasheet CoolMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 380mOhm @ 7A, 10V 3.9V @ 500µA 60 nC @ 10 V ±20V 1200 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-1
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WINSUN SOURCING SUPPORT

Need Help Sourcing FETs, MOSFETs?

Send the target part number, manufacturer, specifications and quantity. Winsun (HK) Electronics can assist with availability checks, quotation support, shortage sourcing and alternative-part options when appropriate.

Availability and lead-time support BOM, shortage and alternative sourcing
FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.