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FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

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RFQ & BOM Support Send your target MPN, quantity or BOM
Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IPW60R190P6FKSA1 Infineon Technologies

IPW60R190P6FKSA1

MOSFET N-CH 600V 20.2A TO247-3

Infineon Technologies

10 -
Datasheet CoolMOS™ P6 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 20.2A (Tc) 10V 190mOhm @ 7.6A, 10V 4.5V @ 630µ 11 nC @ 10 V ±20V 1750 pF @ 100 V - 151W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-3
IPA60R199CPXKSA1 Infineon Technologies

IPA60R199CPXKSA1

MOSFET N-CH 650V 16A TO220-FP

Infineon Technologies

9,386 -
Datasheet CoolMOS™ TO-220-3 Full Pack Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 16A (Tc) 10V 199mOhm @ 9.9A, 10V 3.5V @ 1.1mA 43 nC @ 10 V ±20V 1520 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-31
IPW65R065C7XKSA1 Infineon Technologies

IPW65R065C7XKSA1

MOSFET N-CH 650V 33A TO247-3

Infineon Technologies

7,494 -
Datasheet CoolMOS™ C7 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 33A (Tc) 10V 65mOhm @ 17.1A, 10V 4V @ 850µA 64 nC @ 10 V ±20V 3020 pF @ 400 V - 171W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-3
IMZ120R140M1HXKSA1 Infineon Technologies

IMZ120R140M1HXKSA1

SICFET N-CH 1.2KV 19A TO247-4

Infineon Technologies

22 -
Datasheet CoolSiC™ TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 19A (Tc) 15V, 18V 182mOhm @ 6A, 18V 5.7V @ 2.5mA 13 nC @ 18 V +23V, -7V 454 pF @ 800 V - 94W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-4-1
IMW65R083M1HXKSA1 Infineon Technologies

IMW65R083M1HXKSA1

SILICON CARBIDE MOSFET, PG-TO247

Infineon Technologies

15 -
Datasheet CoolSiC™ TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 24A (Tc) 18V 111mOhm @ 11.2A, 18V 5.7V @ 3.3mA 19 nC @ 18 V +20V, -2V 624 pF @ 400 V - 104W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-3-41
IPS70R1K4P7SAKMA1 Infineon Technologies

IPS70R1K4P7SAKMA1

MOSFET N-CH 700V 4A TO251-3

Infineon Technologies

3,749 -
Datasheet CoolMOS™ P7 TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) 700 V 4A (Tc) 10V 1.4Ohm @ 700mA, 10V 3.5V @ 40µA 4.7 nC @ 10 V ±16V 158 pF @ 400 V - 22.7W (Tc) -40°C ~ 150°C (TJ) - - Through Hole PG-TO251-3
IPA50R950CEXKSA2 Infineon Technologies

IPA50R950CEXKSA2

MOSFET N-CH 500V 3.7A TO220

Infineon Technologies

2,409 -
Datasheet CoolMOS™ CE TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 500 V 3.7A (Tc) 13V 950mOhm @ 1.2A, 13V 3.5V @ 100µA 10.5 nC @ 10 V ±20V 231 pF @ 100 V - 25.7W (Tc) -40°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-FP
IPAN70R600P7SXKSA1 Infineon Technologies

IPAN70R600P7SXKSA1

MOSFET N-CH 700V 8.5A TO220

Infineon Technologies

8,288 -
Datasheet CoolMOS™ P7 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 700 V 8.5A (Tc) 10V 600mOhm @ 1.8A, 10V 3.5V @ 90µA 10.5 nC @ 10 V ±16V 364 pF @ 400 V - 24.9W (Tc) -40°C ~ 150°C (TJ) - - Through Hole PG-TO220-FP
IPAN70R360P7SXKSA1 Infineon Technologies

IPAN70R360P7SXKSA1

MOSFET N-CH 700V 12.5A TO220

Infineon Technologies

6,992 -
Datasheet CoolMOS™ P7 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 700 V 12.5A (Tc) 10V 360mOhm @ 3A, 10V 3.5V @ 150µA 16.4 nC @ 10 V ±16V 517 pF @ 400 V - 26.5W (Tc) -40°C ~ 150°C (TJ) - - Through Hole PG-TO220-FP
IPA65R650CEXKSA1 Infineon Technologies

IPA65R650CEXKSA1

MOSFET N-CH 650V 7A TO220

Infineon Technologies

5,661 -
Datasheet CoolMOS™ CE TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 7A (Tc) 10V 650mOhm @ 2.1A, 10V 3.5V @ 210µA 23 nC @ 10 V ±20V 440 pF @ 100 V - 28W (Tc) -40°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-FP
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WINSUN SOURCING SUPPORT

Need Help Sourcing FETs, MOSFETs?

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Availability and lead-time support BOM, shortage and alternative sourcing
FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.