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FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

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Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IPA60R400CEXKSA1 Infineon Technologies

IPA60R400CEXKSA1

MOSFET N-CH 600V 10.3A TO220-FP

Infineon Technologies

3,356 -
Datasheet CoolMOS™ CE TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 10.3A (Tc) 10V 400mOhm @ 3.8A, 10V 3.5V @ 300µA 32 nC @ 10 V ±20V 700 pF @ 100 V - 31W (Tc) -40°C ~ 150°C (TJ) - - Through Hole PG-TO220-FP
IPA60R360P7XKSA1 Infineon Technologies

IPA60R360P7XKSA1

MOSFET N-CHANNEL 650V 9A TO220

Infineon Technologies

8,738 -
Datasheet CoolMOS™ P7 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 9A (Tc) 10V 360mOhm @ 2.7A, 10V 4V @ 140µA 13 nC @ 10 V ±20V 555 pF @ 400 V - 22W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220 Full Pack
IPU95R750P7AKMA1 Infineon Technologies

IPU95R750P7AKMA1

MOSFET N-CH 950V 9A TO251-3

Infineon Technologies

7,622 -
Datasheet CoolMOS™ P7 TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) 950 V 9A (Tc) 10V 750mOhm @ 4.5A, 10V 3.5V @ 220µA 23 nC @ 10 V ±20V 712 pF @ 400 V - 73W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO251-3
IPA60R600P6XKSA1 Infineon Technologies

IPA60R600P6XKSA1

MOSFET N-CH 600V 4.9A TO220-FP

Infineon Technologies

8,619 -
Datasheet CoolMOS™ P6 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 4.9A (Tc) 10V 600mOhm @ 2.4A, 10V 4.5V @ 200µA 12 nC @ 10 V ±20V 557 pF @ 100 V - 28W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-FP
IPA65R600E6XKSA1 Infineon Technologies

IPA65R600E6XKSA1

MOSFET N-CH 650V 7.3A TO220-FP

Infineon Technologies

2,022 -
Datasheet CoolMOS™ TO-220-3 Full Pack Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 7.3A (Tc) 10V 600mOhm @ 2.1A, 10V 3.5V @ 210µA 23 nC @ 10 V ±20V 440 pF @ 100 V - 28W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-FP
IPP052N06L3GXKSA1 Infineon Technologies

IPP052N06L3GXKSA1

MOSFET N-CH 60V 80A TO220-3

Infineon Technologies

8,392 -
Datasheet OptiMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 4.5V, 10V 5mOhm @ 80A, 10V 2.2V @ 58µA 50 nC @ 4.5 V ±20V 8400 pF @ 30 V - 115W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3
IPA80R1K0CEXKSA2 Infineon Technologies

IPA80R1K0CEXKSA2

MOSFET N-CH 800V 5.7A TO220-FP

Infineon Technologies

9,897 -
Datasheet CoolMOS™ CE TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 800 V 5.7A (Tc) 10V 950mOhm @ 3.6A, 10V 3.9V @ 250µA 31 nC @ 10 V ±20V 785 pF @ 100 V - 32W (Tc) -40°C ~ 150°C (TJ) - - Through Hole PG-TO220-FP
IPP086N10N3GXKSA1 Infineon Technologies

IPP086N10N3GXKSA1

MOSFET N-CH 100V 80A TO220-3

Infineon Technologies

7,855 -
Datasheet OptiMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 80A (Tc) 6V, 10V 8.6mOhm @ 73A, 10V 3.5V @ 75µA 55 nC @ 10 V ±20V 3980 pF @ 50 V - 125W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3
IPP60R280P6XKSA1 Infineon Technologies

IPP60R280P6XKSA1

MOSFET N-CH 600V 13.8A TO220-3

Infineon Technologies

6,660 -
Datasheet CoolMOS™ TO-220-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 13.8A (Tc) 10V 280mOhm @ 6.5A, 10V 3.5V @ 430µA 43 nC @ 10 V ±20V 950 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
IRFSL3306PBF Infineon Technologies

IRFSL3306PBF

MOSFET N-CH 60V 120A TO262

Infineon Technologies

7,123 -
Datasheet HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 4.2mOhm @ 75A, 10V 4V @ 150µA 120 nC @ 10 V ±20V 4520 pF @ 50 V - 230W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262
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WINSUN SOURCING SUPPORT

Need Help Sourcing FETs, MOSFETs?

Send the target part number, manufacturer, specifications and quantity. Winsun (HK) Electronics can assist with availability checks, quotation support, shortage sourcing and alternative-part options when appropriate.

Availability and lead-time support BOM, shortage and alternative sourcing
FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.