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FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

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Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IPD60R280P7ATMA1 Infineon Technologies

IPD60R280P7ATMA1

MOSFET N-CH 600V 12A TO252-3

Infineon Technologies

7,956 -
Datasheet CoolMOS™ P7 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 280mOhm @ 3.8A, 10V 4V @ 190µA 18 nC @ 10 V ±20V 761 pF @ 400 V - 53W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO252-3
IPW60R125P6XKSA1 Infineon Technologies

IPW60R125P6XKSA1

MOSFET N-CH 600V 30A TO247-3

Infineon Technologies

7,256 -
Datasheet CoolMOS™ P6 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 125mOhm @ 11.6A, 10V 4.5V @ 960µA 56 nC @ 10 V ±20V 2660 pF @ 100 V - 219W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-3
IPLK80R600P7ATMA1 Infineon Technologies

IPLK80R600P7ATMA1

MOSFET 800V TDSON-8

Infineon Technologies

3,923 -
Datasheet CoolMOS™ P7 8-PowerTDFN Tape & Reel (TR) Active - MOSFET (Metal Oxide) 800 V - - - - - ±20V - - - - - - Surface Mount PG-TDSON-8
IPP60R099P6XKSA1 Infineon Technologies

IPP60R099P6XKSA1

MOSFET N-CH 600V 37.9A TO220-3

Infineon Technologies

9,125 -
Datasheet CoolMOS™ P6 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 37.9A (Tc) 10V 99mOhm @ 14.5A, 10V 4.5V @ 1.21mA 70 nC @ 10 V ±20V 3330 pF @ 100 V - 278W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
IPW60R099C7XKSA1 Infineon Technologies

IPW60R099C7XKSA1

MOSFET N-CH 600V 14A TO247-3

Infineon Technologies

4,456 -
Datasheet CoolMOS™ C7 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 14A (Tc) 10V 99mOhm @ 9.7A, 10V 4V @ 490µA 42 nC @ 10 V ±20V 1819 pF @ 400 V - 110W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-3
SPP15P10PLHXKSA1 Infineon Technologies

SPP15P10PLHXKSA1

MOSFET P-CH 100V 15A TO220-3

Infineon Technologies

2,009 -
Datasheet SIPMOS® TO-220-3 Tube Active P-Channel MOSFET (Metal Oxide) 100 V 15A (Tc) 4.5V, 10V 200mOhm @ 11.3A, 10V 2V @ 1.54mA 62 nC @ 10 V ±20V 1490 pF @ 25 V - 128W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3
IPP028N08N3GXKSA1 Infineon Technologies

IPP028N08N3GXKSA1

MOSFET N-CH 80V 100A TO220-3

Infineon Technologies

6,539 -
Datasheet OptiMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 80 V 100A (Tc) 6V, 10V 2.8mOhm @ 100A, 10V 3.5V @ 270µA 206 nC @ 10 V ±20V 14200 pF @ 40 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3
IAUC120N04S6N009ATMA1 Infineon Technologies

IAUC120N04S6N009ATMA1

MOSFET N-CH 40V 120A 8TDSON-33

Infineon Technologies

2,103 -
Datasheet OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 7V, 10V 0.9mOhm @ 60A, 10V 3.4V @ 90µA 115 nC @ 10 V ±20V 7360 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TDSON-8-33
IPP65R110CFDAAKSA1 Infineon Technologies

IPP65R110CFDAAKSA1

MOSFET N-CH 650V 31.2A TO220-3

Infineon Technologies

6,387 -
Datasheet CoolMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 31.2A (Tc) 10V 110mOhm @ 12.7A, 10V 4.5V @ 1.3mA 118 nC @ 10 V ±20V 3240 pF @ 100 V - 277.8W (Tc) -40°C ~ 150°C (TJ) Automotive AEC-Q101 Through Hole PG-TO220-3
IRL3705NSTRLPBF Infineon Technologies

IRL3705NSTRLPBF

MOSFET N-CH 55V 89A D2PAK

Infineon Technologies

8,452 -
Datasheet HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 55 V 89A (Tc) 4V, 10V 10mOhm @ 46A, 10V 2V @ 250µA 98 nC @ 5 V ±16V 3600 pF @ 25 V - 3.8W (Ta), 170W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
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WINSUN SOURCING SUPPORT

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Send the target part number, manufacturer, specifications and quantity. Winsun (HK) Electronics can assist with availability checks, quotation support, shortage sourcing and alternative-part options when appropriate.

Availability and lead-time support BOM, shortage and alternative sourcing
FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.