FETs, MOSFETs

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
IPD78CN10NGBUMA1 MOSFET N-CH 100V 13A TO252-3 Infineon Technologies	5,268	-	RFQ	Datasheet	OptiMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	13A (Tc)	10V	78mOhm @ 13A, 10V	4V @ 12µA	11 nC @ 10 V	±20V	716 pF @ 50 V	-	31W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO252-3
IPP147N03L G MOSFET N-CH 30V 20A TO220-3 Infineon Technologies	6,555	-	RFQ	Datasheet	OptiMOS™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	20A (Tc)	4.5V, 10V	14.7mOhm @ 20A, 10V	2.2V @ 250µA	10 nC @ 10 V	±20V	1000 pF @ 15 V	-	31W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO220-3
IRLR2905PBF MOSFET N-CH 55V 42A DPAK Infineon Technologies	8,097	-	RFQ	Datasheet	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	55 V	42A (Tc)	4V, 10V	27mOhm @ 25A, 10V	2V @ 250µA	48 nC @ 5 V	±16V	1700 pF @ 25 V	-	110W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-252AA (DPAK)
IPB114N03L G MOSFET N-CH 30V 30A D2PAK Infineon Technologies	2,606	-	RFQ	Datasheet	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	30A (Tc)	4.5V, 10V	11.4mOhm @ 30A, 10V	2.2V @ 250µA	14 nC @ 10 V	±20V	1500 pF @ 15 V	-	38W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-3
SPU11N10 MOSFET N-CH 100V 10.5A TO251-3 Infineon Technologies	2,741	-	RFQ	Datasheet	SIPMOS®	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	10.5A (Tc)	10V	170mOhm @ 7.8A, 10V	4V @ 21µA	18.3 nC @ 10 V	±20V	400 pF @ 25 V	-	50W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	P-TO251-3-1
IRF7233TR MOSFET P-CH 12V 9.5A 8SO Infineon Technologies	6,760	-	RFQ	Datasheet	HEXFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	12 V	9.5A (Ta)	2.5V, 4.5V	20mOhm @ 9.5A, 4.5V	600mV @ 250µA (Min)	74 nC @ 5 V	±12V	6000 pF @ 10 V	-	2.5W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SO
IRF7220GTRPBF MOSFET P-CH 14V 11A 8SO Infineon Technologies	6,706	-	RFQ	Datasheet	HEXFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	14 V	11A (Ta)	2.5V, 4.5V	12mOhm @ 11A, 4.5V	600mV @ 250µA (Min)	125 nC @ 5 V	±12V	8075 pF @ 10 V	-	2.5W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SO
IRLR3717TRLPBF MOSFET N-CH 20V 120A DPAK Infineon Technologies	3,979	-	RFQ	Datasheet	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	20 V	120A (Tc)	4.5V, 10V	4mOhm @ 15A, 10V	2.45V @ 250µA	31 nC @ 4.5 V	±20V	2830 pF @ 10 V	-	89W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-252AA (DPAK)
IPD60R460CEAUMA1 CONSUMER Infineon Technologies	7,956	-	RFQ	Datasheet	CoolMOS™ CE	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	600 V	13.1A (Tj)	10V	460mOhm @ 3.4A, 10V	3.5V @ 280µA	28 nC @ 10 V	±20V	620 pF @ 100 V	-	74W	-40°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TO252-3-344
BSS205NL6327HTSA1 MOSFET N-CH 20V 2.5A SOT23-3 Infineon Technologies	3,719	-	RFQ	Datasheet	OptiMOS™	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	20 V	2.5A (Ta)	2.5V, 4.5V	50mOhm @ 2.5A, 4.5V	1.2V @ 11µA	3.2 nC @ 4.5 V	±12V	419 pF @ 10 V	-	500mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-SOT23

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FETs, MOSFETs FAQ

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