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FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

Parametric Selection Filter options by technical parameters
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RFQ & BOM Support Send your target MPN, quantity or BOM
Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IPF10N03LA G Infineon Technologies

IPF10N03LA G

MOSFET N-CH 25V 30A TO252-3

Infineon Technologies

6,350 -
Datasheet OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 25 V 30A (Tc) 4.5V, 10V 10.4mOhm @ 30A, 10V 2V @ 20µA 11 nC @ 5 V ±20V 1358 pF @ 15 V - 52W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3-23
IPU78CN10N G Infineon Technologies

IPU78CN10N G

MOSFET N-CH 100V 13A TO251-3

Infineon Technologies

4,231 -
Datasheet OptiMOS™ TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 13A (Tc) 10V 78mOhm @ 13A, 10V 4V @ 12µA 11 nC @ 10 V ±20V 716 pF @ 50 V - 31W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO251-3
IPC045N10N3X1SA1 Infineon Technologies

IPC045N10N3X1SA1

MOSFET N-CH 100V 1A SAWN ON FOIL

Infineon Technologies

6,259 -
Datasheet OptiMOS™ Die Bulk Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 1A (Tj) 10V 100mOhm @ 2A, 10V 3.5V @ 33µA - - - - - - - - Surface Mount Sawn on foil
IRF5804 Infineon Technologies

IRF5804

MOSFET P-CH 40V 2.5A MICRO6

Infineon Technologies

8,752 -
Datasheet HEXFET® SOT-23-6 Thin, TSOT-23-6 Tube Obsolete P-Channel MOSFET (Metal Oxide) 40 V 2.5A (Ta) 4.5V, 10V 198mOhm @ 2.5A, 10V 3V @ 250µA 21 nC @ 10 V ±20V 680 pF @ 25 V - 2W (Ta) - - - Surface Mount Micro6™(TSOP-6)
SPD30N03S2L10T Infineon Technologies

SPD30N03S2L10T

MOSFET N-CH 30V 30A TO252-3

Infineon Technologies

6,802 -
Datasheet OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 30A (Tc) 4.5V, 10V 10mOhm @ 30A, 10V 2V @ 50µA 41.8 nC @ 10 V ±20V 1550 pF @ 25 V - 100W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3-11
IRFL1006TR Infineon Technologies

IRFL1006TR

MOSFET N-CH 60V 1.6A SOT223

Infineon Technologies

3,732 -
Datasheet HEXFET® TO-261-4, TO-261AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 1.6A (Ta) 10V 220mOhm @ 1.6A, 10V 4V @ 250µA 8 nC @ 10 V ±20V 160 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-223
SPI10N10 Infineon Technologies

SPI10N10

MOSFET N-CH 100V 10.3A TO262-3

Infineon Technologies

6,908 -
Datasheet SIPMOS® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 100 V 10.3A (Tc) 10V 170mOhm @ 7.8A, 10V 4V @ 21µA 19.4 nC @ 10 V ±20V 426 pF @ 25 V - 50W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3-1
IPS80R1K4P7AKMA1 Infineon Technologies

IPS80R1K4P7AKMA1

MOSFET N-CH 800V 4A TO251-3

Infineon Technologies

2,739 -
Datasheet CoolMOS™ TO-251-3 Stub Leads, IPAK Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 800 V 4A (Tc) 10V 1.4Ohm @ 1.4A, 10V 3.5V @ 700µA 10 nC @ 10 V ±20V - - 32W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO251-3-11
IPA60R1K5CEXKSA1 Infineon Technologies

IPA60R1K5CEXKSA1

MOSFET N-CH 600V 5A TO220

Infineon Technologies

9,220 -
Datasheet CoolMOS™ TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 5A (Tc) 10V 1.5Ohm @ 1.1A, 10V 3.5V @ 90µA 9.4 nC @ 10 V ±20V 200 pF @ 100 V - 20W (Tc) -40°C ~ 150°C (TJ) - - Through Hole PG-TO220-FP
IRFZ44ZPBF Infineon Technologies

IRFZ44ZPBF

MOSFET N-CH 55V 51A TO220AB

Infineon Technologies

5,762 -
Datasheet HEXFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 51A (Tc) 10V 13.9mOhm @ 31A, 10V 4V @ 250µA 43 nC @ 10 V ±20V 1420 pF @ 25 V - 80W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
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WINSUN SOURCING SUPPORT

Need Help Sourcing FETs, MOSFETs?

Send the target part number, manufacturer, specifications and quantity. Winsun (HK) Electronics can assist with availability checks, quotation support, shortage sourcing and alternative-part options when appropriate.

Availability and lead-time support BOM, shortage and alternative sourcing
FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.