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FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

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RFQ & BOM Support Send your target MPN, quantity or BOM
Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IRF1405ZPBF Infineon Technologies

IRF1405ZPBF

MOSFET N-CH 55V 75A TO220AB

Infineon Technologies

1,473 -
Datasheet HEXFET® TO-220-3 Tube Last Time Buy N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 4.9mOhm @ 75A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 4780 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
IPP80R280P7XKSA1 Infineon Technologies

IPP80R280P7XKSA1

MOSFET N-CH 800V 17A TO220-3

Infineon Technologies

466 -
Datasheet CoolMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 17A (Tc) 10V 280mOhm @ 7.2A, 10V 3.5V @ 360µA 36 nC @ 10 V ±20V 1200 pF @ 500 V - 101W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
IPA80R280P7XKSA1 Infineon Technologies

IPA80R280P7XKSA1

MOSFET N-CH 800V 17A TO220-3F

Infineon Technologies

299 -
Datasheet CoolMOS™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 800 V 17A (Tc) 10V 280mOhm @ 7.2A, 10V 3.5V @ 360µA 36 nC @ 10 V ±20V 1200 pF @ 500 V - 30W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-31
IPP076N12N3GXKSA1 Infineon Technologies

IPP076N12N3GXKSA1

MOSFET N-CH 120V 100A TO220-3

Infineon Technologies

194 -
Datasheet OptiMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 120 V 100A (Tc) 10V 7.6mOhm @ 100A, 10V 4V @ 130µA 101 nC @ 10 V ±20V 6640 pF @ 60 V - 188W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3
IPB019N08NF2SATMA1 Infineon Technologies

IPB019N08NF2SATMA1

TRENCH 40<-<100V PG-TO263-3

Infineon Technologies

161 -
Datasheet StrongIRFET™ 2 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 166A (Tc) 6V, 10V 1.95mOhm @ 100A, 10V 3.8V @ 194µA 186 nC @ 10 V ±20V 8700 pF @ 40 V - 250W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3
IPB60R120P7ATMA1 Infineon Technologies

IPB60R120P7ATMA1

MOSFET N-CH 600V 26A D2PAK

Infineon Technologies

2,896 -
Datasheet CoolMOS™ P7 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 26A (Tc) 10V 120mOhm @ 8.2A, 10V 4V @ 410µA 36 nC @ 10 V ±20V 1544 pF @ 400 V - 95W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO263-3
IPP60R120P7XKSA1 Infineon Technologies

IPP60R120P7XKSA1

MOSFET N-CH 600V 26A TO220-3

Infineon Technologies

1,548 -
Datasheet CoolMOS™ P7 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 26A (Tc) 10V 120mOhm @ 8.2A, 10V 4V @ 410µA 36 nC @ 10 V ±20V 1544 pF @ 400 V - 95W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
IPP048N12N3GXKSA1 Infineon Technologies

IPP048N12N3GXKSA1

MOSFET N-CH 120V 100A TO220-3

Infineon Technologies

984 -
Datasheet OptiMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 120 V 100A (Tc) 10V 4.8mOhm @ 100A, 10V 4V @ 230µA 182 nC @ 10 V ±20V 12000 pF @ 60 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
IRFS7430TRLPBF Infineon Technologies

IRFS7430TRLPBF

MOSFET N-CH 40V 195A D2PAK

Infineon Technologies

376 -
Datasheet HEXFET®, StrongIRFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 6V, 10V 1.2mOhm @ 100A, 10V 3.9V @ 250µA 460 nC @ 10 V ±20V 14240 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
IAUT200N08S5N023ATMA1 Infineon Technologies

IAUT200N08S5N023ATMA1

MOSFET N-CH 80V 200A 8HSOF

Infineon Technologies

6,425 -
Datasheet OptiMOS™ 5 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 200A (Tc) 6V, 10V 2.3mOhm @ 100A, 10V 3.8V @ 130µA 110 nC @ 10 V ±20V 7670 pF @ 40 V - 200W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-HSOF-8-1
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WINSUN SOURCING SUPPORT

Need Help Sourcing FETs, MOSFETs?

Send the target part number, manufacturer, specifications and quantity. Winsun (HK) Electronics can assist with availability checks, quotation support, shortage sourcing and alternative-part options when appropriate.

Availability and lead-time support BOM, shortage and alternative sourcing
FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.