FETs, MOSFETs

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
SPA15N60C3XKSA1 MOSFET N-CH 650V 15A TO220-FP Infineon Technologies	211	-	RFQ	Datasheet	CoolMOS™	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	15A (Tc)	10V	280mOhm @ 9.4A, 10V	3.9V @ 675µA	63 nC @ 10 V	±20V	1660 pF @ 25 V	-	34W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-3-31
IPP016N08NF2SAKMA1 TRENCH 40<-<100V Infineon Technologies	482	-	RFQ	Datasheet	StrongIRFET™ 2	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	80 V	35A (Ta), 196A (Tc)	6V, 10V	1.6mOhm @ 100A, 10V	3.8V @ 267µA	255 nC @ 10 V	±20V	12000 pF @ 40 V	-	3.8W (Ta), 300W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO220-3
IPP014N06NF2SAKMA2 TRENCH 40<-<100V PG-TO220-3 Infineon Technologies	1,000	-	RFQ	Datasheet	StrongIRFET™	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	60 V	39A (Ta), 198A (Tc)	6V, 10V	1.4mOhm @ 100A, 10V	3.3V @ 246µA	305 nC @ 10 V	±20V	13800 pF @ 30 V	-	3.8W (Ta), 300W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO220-3-U05
IPB65R190CFDAATMA1 MOSFET N-CH 650V 17.5A D2PAK Infineon Technologies	1,182	-	RFQ	Datasheet	CoolMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	650 V	17.5A (Tc)	10V	190mOhm @ 7.3A, 10V	4.5V @ 700µA	68 nC @ 10 V	±20V	1850 pF @ 100 V	-	151W (Tc)	-40°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	PG-TO263-3
IPF024N10NF2SATMA1 TRENCH >=100V Infineon Technologies	729	-	RFQ	Datasheet	StrongIRFET™ 2	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	100 V	227A (Tc)	6V, 10V	2.4mOhm @ 100A, 10V	3.8V @ 169µA	154 nC @ 10 V	±20V	7300 pF @ 50 V	-	250W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-7-14
IPB026N10NF2SATMA1 TRENCH >=100V Infineon Technologies	2,024	-	RFQ	Datasheet	StrongIRFET™ 2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	100 V	162A (Tc)	6V, 10V	2.65mOhm @ 100A, 10V	3.8V @ 169µA	154 nC @ 10 V	±20V	7300 pF @ 50 V	-	250W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-3
IPB016N06L3GATMA1 MOSFET N-CH 60V 180A TO263-7 Infineon Technologies	9,298	-	RFQ	Datasheet	OptiMOS™	TO-263-7, D2PAK (6 Leads + Tab)	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	180A (Tc)	4.5V, 10V	1.6mOhm @ 100A, 10V	2.2V @ 196µA	166 nC @ 4.5 V	±20V	28000 pF @ 30 V	-	250W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-7
SPB21N50C3ATMA1 MOSFET N-CH 560V 21A TO263-3 Infineon Technologies	2,683	-	RFQ	Datasheet	CoolMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	560 V	21A (Tc)	10V	190mOhm @ 13.1A, 10V	3.9V @ 1mA	95 nC @ 10 V	±20V	2400 pF @ 25 V	-	208W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TO263-3-2
IPB65R150CFDATMA2 MOSFET N-CH 650V 22.4A TO263-3 Infineon Technologies	1,327	-	RFQ	Datasheet	CoolMOS™ CFD2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	650 V	22.4A (Tc)	10V	150mOhm @ 9.3A, 10V	4.5V @ 900µA	86 nC @ 10 V	±20V	2340 pF @ 100 V	-	195.3W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TO263-3
IPF017N08NF2SATMA1 TRENCH 40<-<100V PG-TO263-7 Infineon Technologies	1,455	-	RFQ	Datasheet	StrongIRFET™ 2	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	80 V	259A (Tc)	6V, 10V	1.7mOhm @ 100A, 10V	3.8V @ 194µA	186 nC @ 10 V	±20V	8700 pF @ 40 V	-	250W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-7-14

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FETs, MOSFETs FAQ

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