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FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

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RFQ & BOM Support Send your target MPN, quantity or BOM
Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IPB013N06NF2SATMA1 Infineon Technologies

IPB013N06NF2SATMA1

TRENCH 40<-<100V

Infineon Technologies

898 -
Datasheet StrongIRFET™2 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 40A (Ta), 198A (Tc) 6V, 10V 1.3mOhm @ 100A, 10V 3.3V @ 246µA 305 nC @ 10 V ±20V 13800 pF @ 30 V - 3.8W (Ta), 300W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3
IPW60R190E6FKSA1 Infineon Technologies

IPW60R190E6FKSA1

MOSFET N-CH 600V 20.2A TO247-3

Infineon Technologies

139 -
Datasheet CoolMOS™ TO-247-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 20.2A (Tc) 10V 190mOhm @ 9.5A, 10V 3.5V @ 630µA 63 nC @ 10 V ±20V 1400 pF @ 100 V - 151W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-3-1
IPL60R105P7AUMA1 Infineon Technologies

IPL60R105P7AUMA1

MOSFET N-CH 600V 33A 4VSON

Infineon Technologies

10,206 -
Datasheet CoolMOS™ P7 4-PowerTSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 33A (Tc) 10V 105mOhm @ 10.5A, 10V 4V @ 530µA 45 nC @ 10 V ±20V 1952 pF @ 400 V - 137W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount PG-VSON-4
IPDD60R125G7XTMA1 Infineon Technologies

IPDD60R125G7XTMA1

MOSFET N-CH 600V 20A HDSOP-10

Infineon Technologies

1,087 -
Datasheet CoolMOS™ G7 10-PowerSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 125mOhm @ 6.4A, 10V 4V @ 320µA 27 nC @ 10 V ±20V 1080 pF @ 400 V - 120W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HDSOP-10-1
ISC010N06NM5ATMA1 Infineon Technologies

ISC010N06NM5ATMA1

OPTIMOS5 60 V POWER MOSFET IN SU

Infineon Technologies

3,429 -
Datasheet OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 39A (Ta), 330A (Tc) 6V, 10V 1.05mOhm @ 50A, 10V 3.3V @ 147µA 143 nC @ 10 V ±20V 11000 pF @ 30 V - 3W (Ta), 214W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TSON-8-3
IPT60R105CFD7XTMA1 Infineon Technologies

IPT60R105CFD7XTMA1

MOSFET N-CH 600V 24A 8HSOF

Infineon Technologies

340 -
Datasheet CoolMOS™ CFD7 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 24A (Tc) 10V 105mOhm @ 7.8A, 10V 4.5V @ 390µA 36 nC @ 10 V ±20V 1503 pF @ 400 V - 140W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HSOF-8-2
SPW16N50C3FKSA1 Infineon Technologies

SPW16N50C3FKSA1

MOSFET N-CH 560V 16A TO247-3

Infineon Technologies

148 -
Datasheet CoolMOS™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 560 V 16A (Tc) 10V 280mOhm @ 10A, 10V 3.9V @ 675µA 66 nC @ 10 V ±20V 1600 pF @ 25 V - 160W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-3-1
SPP15N60C3XKSA1 Infineon Technologies

SPP15N60C3XKSA1

MOSFET N-CH 650V 15A TO220-3

Infineon Technologies

413 -
Datasheet CoolMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Tc) 10V 280mOhm @ 9.4A, 10V 3.9V @ 675µA 63 nC @ 10 V ±20V 1660 pF @ 25 V - 156W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-1
IPP50R140CPXKSA1 Infineon Technologies

IPP50R140CPXKSA1

MOSFET N-CH 550V 23A TO220-3

Infineon Technologies

387 -
Datasheet CoolMOS™ TO-220-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 550 V 23A (Tc) 10V 140mOhm @ 14A, 10V 3.5V @ 930µA 64 nC @ 10 V ±20V 2540 pF @ 100 V - 192W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-1
BSC019N08NS5ATMA1 Infineon Technologies

BSC019N08NS5ATMA1

MOSFET N-CH 80V 28A/237A TSON-8

Infineon Technologies

4,926 -
Datasheet OptiMOS™ 5 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 28A (Ta), 237A (Tc) 6V, 10V 1.9mOhm @ 50A, 10V 3.8V @ 146µA 117 nC @ 10 V ±20V 8600 pF @ 40 V - 3W (Ta), 214W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TSON-8-3
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WINSUN SOURCING SUPPORT

Need Help Sourcing FETs, MOSFETs?

Send the target part number, manufacturer, specifications and quantity. Winsun (HK) Electronics can assist with availability checks, quotation support, shortage sourcing and alternative-part options when appropriate.

Availability and lead-time support BOM, shortage and alternative sourcing
FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.