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FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

Parametric Selection Filter options by technical parameters
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RFQ & BOM Support Send your target MPN, quantity or BOM
Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
BSC105N10LSFGATMA1 Infineon Technologies

BSC105N10LSFGATMA1

MOSFET N-CH 100V 11.4/90A 8TDSON

Infineon Technologies

3,988 -
Datasheet OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100 V 11.4A (Ta), 90A (Tc) 4.5V, 10V 10.5mOhm @ 50A, 10V 2.4V @ 110µA 53 nC @ 10 V ±20V 3900 pF @ 50 V - 156W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TDSON-8-1
AUIRF3205Z Infineon Technologies

AUIRF3205Z

MOSFET N-CH 55V 75A TO220AB

Infineon Technologies

6 -
Datasheet HEXFET® TO-220-3 Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 6.5mOhm @ 66A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 3450 pF @ 25 V - 170W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
IPB100N06S2L05ATMA2 Infineon Technologies

IPB100N06S2L05ATMA2

MOSFET N-CH 55V 100A TO263-3

Infineon Technologies

5,215 -
Datasheet OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 55 V 100A (Tc) 4.5V, 10V 4.4mOhm @ 80A, 10V 2V @ 250µA 230 nC @ 10 V ±20V 5660 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3-2
IPB011N04NF2SATMA1 Infineon Technologies

IPB011N04NF2SATMA1

TRENCH <= 40V

Infineon Technologies

3,876 -
Datasheet StrongIRFET™2 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 43A (Ta), 201A (Tc) 6V, 10V 1.15mOhm @ 100A, 10V 3.4V @ 249µA 315 nC @ 10 V ±20V 15000 pF @ 20 V - 3.8W (Ta), 375W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3
IRFP048N Infineon Technologies

IRFP048N

MOSFET N-CH 55V 64A TO247AC

Infineon Technologies

8,668 -
Datasheet HEXFET® TO-247-3 Bag Obsolete N-Channel MOSFET (Metal Oxide) 55 V 64A (Tc) 10V 16mOhm @ 37A, 10V 4V @ 250µA 89 nC @ 10 V ±20V 1900 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247AC
IRLBA1304 Infineon Technologies

IRLBA1304

MOSFET N-CH 40V 185A SUPER-220

Infineon Technologies

9,284 -
Datasheet HEXFET® TO-273AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 185A (Tc) 4.5V, 10V 4mOhm @ 110A, 10V 1V @ 250µA 140 nC @ 4.5 V ±16V 7660 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole SUPER-220™ (TO-273AA)
AUIRF7739L2TR Infineon Technologies

AUIRF7739L2TR

MOSFET N-CH 40V 46A DIRECTFET

Infineon Technologies

2,211 -
Datasheet HEXFET® DirectFET™ Isometric L8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 46A (Ta), 270A (Tc) 10V 1mOhm @ 160A, 10V 4V @ 250µA 330 nC @ 10 V ±20V 11880 pF @ 25 V - 3.8W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount DirectFET™ Isometric L8
IPB60R299CPAATMA1 Infineon Technologies

IPB60R299CPAATMA1

MOSFET N-CH 600V 11A TO263-3

Infineon Technologies

5,818 -
Datasheet CoolMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 299mOhm @ 6.6A, 10V 3.5V @ 440µA 29 nC @ 10 V ±20V 1100 pF @ 100 V - 96W (Tc) -40°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO263-3-2
IRFH7185TRPBF Infineon Technologies

IRFH7185TRPBF

MOSFET N CH 100V 19A 8QFN

Infineon Technologies

6,282 -
Datasheet FASTIRFET™, HEXFET® 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100 V 19A (Ta) 10V 5.2mOhm @ 50A, 10V 3.6V @ 150µA 54 nC @ 10 V ±20V 2320 pF @ 50 V - 3.6W (Ta), 160W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PQFN (5x6)
IPC302N25N3X1SA1 Infineon Technologies

IPC302N25N3X1SA1

MOSFET N-CH 250V 1A SAWN ON FOIL

Infineon Technologies

2,304 -
Datasheet OptiMOS™ Die Bulk Not For New Designs N-Channel MOSFET (Metal Oxide) 250 V 1A (Tj) 10V 100mOhm @ 2A, 10V 4V @ 270µA - - - - - - - - Surface Mount Sawn on foil
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WINSUN SOURCING SUPPORT

Need Help Sourcing FETs, MOSFETs?

Send the target part number, manufacturer, specifications and quantity. Winsun (HK) Electronics can assist with availability checks, quotation support, shortage sourcing and alternative-part options when appropriate.

Availability and lead-time support BOM, shortage and alternative sourcing
FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.