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FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

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Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
AUIRF1404Z Infineon Technologies

AUIRF1404Z

MOSFET N-CH 40V 160A TO220AB

Infineon Technologies

2,933 -
Datasheet HEXFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 10V 3.7mOhm @ 75A, 10V 4V @ 250µA 150 nC @ 10 V ±20V 4340 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
IPA60R099C6XKSA1 Infineon Technologies

IPA60R099C6XKSA1

MOSFET N-CH 600V 37.9A TO220-FP

Infineon Technologies

8,458 -
Datasheet CoolMOS™ TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 37.9A (Tc) 10V 99mOhm @ 18.1A, 10V 3.5V @ 1.21mA 119 nC @ 10 V ±20V 2660 pF @ 100 V - 35W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-FP
IPC302N25N3AX1SA1 Infineon Technologies

IPC302N25N3AX1SA1

MOSFET N-CH 250V 1A SAWN ON FOIL

Infineon Technologies

6,014 -
Datasheet OptiMOS™ Die Bulk Not For New Designs N-Channel MOSFET (Metal Oxide) 250 V 1A (Tj) 10V 100mOhm @ 2A, 10V 4V @ 270µA - - - - - - - - Surface Mount Sawn on foil
IAUA250N04S6N007AUMA1 Infineon Technologies

IAUA250N04S6N007AUMA1

MOSFET_(20V 40V) PG-HSOF-5

Infineon Technologies

3,796 -
Datasheet OptiMOS™ 5-PowerSFN Tape & Reel (TR) Last Time Buy N-Channel MOSFET (Metal Oxide) 40 V 435A (Tj) 7V, 10V 0.7mOhm @ 100A, 10V 3V @ 130µA 151 nC @ 10 V ±20V 9898 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-HSOF-5-4
AIMZHN120R120M1TXKSA1 Infineon Technologies

AIMZHN120R120M1TXKSA1

SIC_DISCRETE

Infineon Technologies

3,653 -
Datasheet - TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 22A (Tc) 18V, 20V 150mOhm @ 7A, 20V 5.1V @ 2.2mA 18 nC @ 20 V +23V, -5V 458 pF @ 800 V - 133W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole PG-TO247-4-14
IRF2804STRL-7P Infineon Technologies

IRF2804STRL-7P

MOSFET N-CH 40V 160A D2PAK

Infineon Technologies

4,769 -
Datasheet HEXFET® TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 10V 1.6mOhm @ 160A, 10V 4V @ 250µA 260 nC @ 10 V ±20V 6930 pF @ 25 V - 330W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK (7-Lead)
IRFS3307 Infineon Technologies

IRFS3307

MOSFET N-CH 75V 130A D2PAK

Infineon Technologies

7,100 -
Datasheet HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 75 V 130A (Tc) 10V 6.3mOhm @ 75A, 10V 4V @ 150µA 180 nC @ 10 V ±20V 5150 pF @ 50 V - 250W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
IPB160N04S2L03ATMA2 Infineon Technologies

IPB160N04S2L03ATMA2

MOSFET N-CH 40V 160A TO263-7

Infineon Technologies

8,258 -
Datasheet OptiMOS™ TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 4.5V, 10V 2.7mOhm @ 80A, 10V 2V @ 250µA 230 nC @ 5 V ±20V 6000 pF @ 15 V - 300W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO263-7-3
IPB180N03S4L01ATMA1 Infineon Technologies

IPB180N03S4L01ATMA1

MOSFET N-CH 30V 180A TO263-7

Infineon Technologies

7,688 -
Datasheet OptiMOS™ TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Last Time Buy N-Channel MOSFET (Metal Oxide) 30 V 180A (Tc) 4.5V, 10V 1.05mOhm @ 100A, 10V 2.2V @ 140µA 239 nC @ 10 V ±16V 17600 pF @ 25 V - 188W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7-3
IRF3805LPBF Infineon Technologies

IRF3805LPBF

MOSFET N-CH 55V 75A TO262

Infineon Technologies

8,900 -
Datasheet HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 3.3mOhm @ 75A, 10V 4V @ 250µA 290 nC @ 10 V ±20V 7960 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262
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WINSUN SOURCING SUPPORT

Need Help Sourcing FETs, MOSFETs?

Send the target part number, manufacturer, specifications and quantity. Winsun (HK) Electronics can assist with availability checks, quotation support, shortage sourcing and alternative-part options when appropriate.

Availability and lead-time support BOM, shortage and alternative sourcing
FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.