FETs, MOSFETs

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Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
IPP076N15N5XKSA1 TRENCH >=100V Infineon Technologies	500	-	RFQ	Datasheet	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	150 V	112A (Tc)	8V, 10V	7.6mOhm @ 56A, 10V	4.6V @ 160µA	61 nC @ 10 V	±20V	4700 pF @ 75 V	-	214W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO220-3-1
IPB120N04S4L02ATMA1 MOSFET N-CH 40V 120A D2PAK Infineon Technologies	455	-	RFQ	Datasheet	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	40 V	120A (Tc)	4.5V, 10V	1.7mOhm @ 100A, 10V	2.2V @ 110µA	190 nC @ 10 V	+20V, -16V	14560 pF @ 25 V	-	158W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PG-TO263-3
IAUCN10S7N040ATMA1 IAUCN10S7N040ATMA1 Infineon Technologies	4,975	-	RFQ	Datasheet	OptiMOS™ 7	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	100 V	130A (Tj)	7V, 10V	4mOhm @ 60A, 10V	3.2V @ 66µA	51.1 nC @ 10 V	±20V	3660 pF @ 50 V	-	142W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PG-TDSON-8-34
IPB160N04S4LH1ATMA1 MOSFET N-CH 40V 160A TO263-7 Infineon Technologies	1,895	-	RFQ	Datasheet	OptiMOS™	TO-263-7, D2PAK (6 Leads + Tab)	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	40 V	160A (Tc)	4.5V, 10V	1.5mOhm @ 100A, 10V	2.2V @ 110µA	190 nC @ 10 V	+20V, -16V	14950 pF @ 25 V	-	167W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PG-TO263-7-3
IQE004NE1LM7SCATMA1 TRENCH <= 40V Infineon Technologies	10,803	-	RFQ	Datasheet	OptiMOS™ 7	8-PowerWDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	15 V	58A (Ta), 379A (Tc)	4.5V, 7V	0.45mOhm @ 30A, 7V	2V @ 432µA	55 nC @ 7 V	±7V	6240 pF @ 7.5 V	-	2.1W (Ta), 89W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-WHSON-8
IQE004NE1LM7CGSCATMA1 TRENCH <= 40V Infineon Technologies	10,806	-	RFQ	Datasheet	OptiMOS™ 7	9-PowerWDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	15 V	58A (Ta), 379A (Tc)	4.5V, 7V	0.45mOhm @ 30A, 7V	2V @ 432µA	55 nC @ 7 V	±7V	6240 pF @ 7.5 V	-	2.1W (Ta), 89W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-WHTFN-9
IQE022N06LM5ATMA1 TRENCH 40<-<100V Infineon Technologies	4,927	-	RFQ	Datasheet	OptiMOS™ 5	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	24A (Ta), 151A (Tc)	4.5V, 10V	2.2mOhm @ 20A, 10V	2.3V @ 48µA	53 nC @ 10 V	±20V	4420 pF @ 30 V	-	2.5W (Ta), 100W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TSON-8-5
IQE022N06LM5CGATMA1 TRENCH 40<-<100V Infineon Technologies	3,420	-	RFQ	Datasheet	OptiMOS™ 5	9-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	24A (Ta), 151A (Tc)	4.5V, 10V	2.2mOhm @ 20A, 10V	2.3V @ 48µA	53 nC @ 10 V	±20V	4420 pF @ 30 V	-	2.5W (Ta), 100W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TTFN-9-3
IPB65R310CFDATMA2 MOSFET N-CH 650V 11.4A TO263-3 Infineon Technologies	933	-	RFQ	Datasheet	CoolMOS™ CFD2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	650 V	11.4A (Tc)	10V	310mOhm @ 4.4A, 10V	4.5V @ 400µA	41 nC @ 10 V	±20V	1100 pF @ 100 V	-	104.2W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TO263-3
IPP020N06NXKSA1 TRENCH 40<-<100V Infineon Technologies	498	-	RFQ	Datasheet	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	60 V	120A (Tc)	6V, 10V	2mOhm @ 100A, 10V	3.3V @ 143µA	124 nC @ 10 V	±20V	9750 pF @ 30 V	-	3W (Ta), 214W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO220-3-1

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FETs, MOSFETs FAQ

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Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

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