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FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

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Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IQE022N06LM5SCATMA1 Infineon Technologies

IQE022N06LM5SCATMA1

OPTIMOS 5 POWER-TRANSISTOR 60V

Infineon Technologies

5,868 -
Datasheet OptiMOS™ 5 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 24A (Ta), 151A (Tc) 4.5V, 10V 2.2mOhm @ 20A, 10V 2.3V @ 48µA 53 nC @ 10 V ±20V 4420 pF @ 30 V - 2.5W (Ta), 100W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-WHSON-8-1
IQE022N06LM5CGSCATMA1 Infineon Technologies

IQE022N06LM5CGSCATMA1

OPTIMOS 5 POWER-TRANSISTOR 60V

Infineon Technologies

4,651 -
Datasheet OptiMOS™ 5 9-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 24A (Ta), 151A (Tc) 4.5V, 10V 2.2mOhm @ 20A, 10V 2.3V @ 48µA 53 nC @ 10 V ±20V 4420 pF @ 30 V - 2.5W (Ta), 100W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-WHTFN-9
IPP034N08N5AKSA1 Infineon Technologies

IPP034N08N5AKSA1

MOSFET N-CH 80V 120A TO220-3

Infineon Technologies

914 -
Datasheet OptiMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 6V, 10V 3.4mOhm @ 100A, 10V 3.8V @ 108µA 87 nC @ 10 V ±20V 6240 pF @ 40 V - 167W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3
IPP030N10N5XKSA1 Infineon Technologies

IPP030N10N5XKSA1

TRENCH >=100V

Infineon Technologies

500 -
Datasheet - TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 6V, 10V 3mOhm @ 100A, 10V 3.8V @ 184µA 139 nC @ 10 V ±20V 10300 pF @ 50 V - 250W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
IPL60R210P6AUMA1 Infineon Technologies

IPL60R210P6AUMA1

MOSFET N-CH 600V 19.2A 4VSON

Infineon Technologies

3,000 -
Datasheet CoolMOS™ P6 4-PowerTSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 19.2A (Tc) 10V 210mOhm @ 7.6A, 10V 4.5V @ 630µA 37 nC @ 10 V ±20V 1750 pF @ 100 V - 151W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount PG-VSON-4
IAUA180N08S5N026AUMA1 Infineon Technologies

IAUA180N08S5N026AUMA1

MOSFET_(75V 120V( PG-HSOF-5

Infineon Technologies

1,468 -
Datasheet OptiMOS™ 5-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 180A (Tj) 6V, 10V 2.6mOhm @ 90A, 10V 3.8V @ 100µA 87 nC @ 10 V ±20V 5980 pF @ 40 V - 179W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-HSOF-5-4
IQE046N08LM5SCATMA1 Infineon Technologies

IQE046N08LM5SCATMA1

OPTIMOS 5 POWER-TRANSISTOR 60V

Infineon Technologies

5,670 -
Datasheet OptiMOS™ 5 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 15.6A (Ta), 99A (Tc) 4.5V, 10V 4.6mOhm @ 20A, 10V 2.3V @ 47µA 38 nC @ 10 V ±20V 3250 pF @ 40 V - 2.5W (Ta), 100W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-WHSON-8-1
IPA600N25NM3SXKSA1 Infineon Technologies

IPA600N25NM3SXKSA1

MOSFET N-CH 250V 15A TO220

Infineon Technologies

276 -
Datasheet OptiMOS™ 3 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 250 V 15A (Tc) 10V 60mOhm @ 15A, 10V 4V @ 89µA 29 nC @ 10 V ±20V 2300 pF @ 100 V - 38W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220 Full Pack
IPP089N15NM6AKSA1 Infineon Technologies

IPP089N15NM6AKSA1

TRENCH >=100V

Infineon Technologies

1,981 -
Datasheet OptiMOS™ 6 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 150 V 13.6A (Ta), 88A (Tc) 8V, 15V 8.4mOhm @ 32A, 15V 4V @ 73µA 38 nC @ 10 V ±20V 2700 pF @ 75 V - 3.8W (Ta), 158W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
IPI120N04S401AKSA1 Infineon Technologies

IPI120N04S401AKSA1

MOSFET N-CH 40V 120A TO262-3

Infineon Technologies

225 -
Datasheet OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 10V 1.9mOhm @ 100A, 10V 4V @ 140µA 176 nC @ 10 V ±20V 14000 pF @ 25 V - 188W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
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WINSUN SOURCING SUPPORT

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FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.