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FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

Parametric Selection Filter options by technical parameters
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RFQ & BOM Support Send your target MPN, quantity or BOM
Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IQD009N06NM5CGATMA1 Infineon Technologies

IQD009N06NM5CGATMA1

OPTIMOS 6 POWER-TRANSISTOR

Infineon Technologies

4,872 -
Datasheet OptiMOS™ 5 9-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 42A (Ta), 445A (Tc) 6V, 10V 0.9mOhm @ 50A, 10V 3.3V @ 163µA 150 nC @ 10 V ±20V 12000 pF @ 30 V - 3W (Ta), 333W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TTFN-9-U02
IPL60R180P6AUMA1 Infineon Technologies

IPL60R180P6AUMA1

MOSFET N-CH 600V 22.4A 4VSON

Infineon Technologies

4,990 -
Datasheet CoolMOS™ P6 4-PowerTSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 22.4A (Tc) 10V 180mOhm @ 9A, 10V 4.5V @ 750µA 44 nC @ 10 V ±20V 2080 pF @ 100 V - 176W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount PG-VSON-4
IPB60R160P6ATMA1 Infineon Technologies

IPB60R160P6ATMA1

MOSFET N-CH 600V 23.8A D2PAK

Infineon Technologies

2,219 -
Datasheet CoolMOS™ P6 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 23.8A (Tc) 10V 160mOhm @ 9A, 10V 4.5V @ 750µA 44 nC @ 10 V ±20V 2080 pF @ 100 V - 176W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO263-3
IAUA180N10S5N029AUMA1 Infineon Technologies

IAUA180N10S5N029AUMA1

MOSFET_(75V 120V( PG-HSOF-5

Infineon Technologies

1,926 -
Datasheet OptiMOS™ 5-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 180A (Tj) 6V, 10V 2.9mOhm @ 90A, 10V 3.8V @ 130µA 105 nC @ 10 V ±20V 7673 pF @ 50 V - 221W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-HSOF-5-4
IPT65R155CFD7XTMA1 Infineon Technologies

IPT65R155CFD7XTMA1

HIGH POWER_NEW

Infineon Technologies

2,000 -
Datasheet - 8-PowerSFN Tape & Reel (TR) Active - - 650 V - - - - - - - - - - - - Surface Mount PG-HSOF-8-3
AUIRFR4615TRL Infineon Technologies

AUIRFR4615TRL

MOSFET N-CH 150V 33A DPAK

Infineon Technologies

3,000 -
Datasheet HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 150 V 33A (Tc) 10V 42mOhm @ 21A, 10V 5V @ 100µA 26 nC @ 10 V ±20V 1750 pF @ 50 V - 144W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA (DPAK)
IPB80N06S2H5ATMA2 Infineon Technologies

IPB80N06S2H5ATMA2

MOSFET N-CH 55V 80A TO263-3

Infineon Technologies

875 -
Datasheet OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 5.2mOhm @ 80A, 10V 4V @ 230µA 155 nC @ 10 V ±20V 4400 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3-2
IPB80N04S204ATMA2 Infineon Technologies

IPB80N04S204ATMA2

MOSFET N-CH 40V 80A TO263-3

Infineon Technologies

6,388 -
Datasheet OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 3.4mOhm @ 80A, 10V 4V @ 250µA 170 nC @ 10 V ±20V 5300 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3-2
IQD016N08NM5CGATMA1 Infineon Technologies

IQD016N08NM5CGATMA1

OPTIMOS 6 POWER-TRANSISTOR

Infineon Technologies

4,824 -
Datasheet OptiMOS™ 5 9-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 31A (Ta), 323A (Tc) 6V, 10V 1.57mOhm @ 50A, 10V 3.8V @ 159µA 133 nC @ 10 V ±20V 9200 pF @ 40 V - 3W (Ta), 333W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TTFN-9-U02
IQD020N10NM5CGATMA1 Infineon Technologies

IQD020N10NM5CGATMA1

OPTIMOS 6 POWER-TRANSISTOR

Infineon Technologies

4,942 -
Datasheet OptiMOS™ 5 9-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 26A (Ta), 273A (Tc) 6V, 10V 2.05mOhm @ 50A, 10V 3.8V @ 159µA 134 nC @ 10 V ±20V 9500 pF @ 50 V - 3W (Ta), 333W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TTFN-9-U02
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WINSUN SOURCING SUPPORT

Need Help Sourcing FETs, MOSFETs?

Send the target part number, manufacturer, specifications and quantity. Winsun (HK) Electronics can assist with availability checks, quotation support, shortage sourcing and alternative-part options when appropriate.

Availability and lead-time support BOM, shortage and alternative sourcing
FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.