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FETs, MOSFETs

Use the filters and product table below to compare FETs, MOSFETs components by manufacturer, availability, pricing reference and technical specifications. Review datasheets and key parameters to narrow the selection for your application.

If you already have a target part number, package, rating or quantity, send the requirement to Winsun (HK) Electronics for availability checks, BOM sourcing, shortage support and quotation assistance.

Parametric Selection Filter options by technical parameters
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RFQ & BOM Support Send your target MPN, quantity or BOM
Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
APT20M38BVRG Microchip Technology

APT20M38BVRG

MOSFET N-CH 200V 67A TO247

Microchip Technology

44 -
Datasheet POWER MOS V® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 200 V 67A (Tc) 10V 38mOhm @ 500mA, 10V 4V @ 1mA 225 nC @ 10 V ±30V 6120 pF @ 25 V - 370W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247 [B]
APT56F50B2 Microchip Technology

APT56F50B2

MOSFET N-CH 500V 56A T-MAX

Microchip Technology

58 -
Datasheet POWER MOS 8™ TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 500 V 56A (Tc) 10V 100mOhm @ 28A, 10V 5V @ 2.5mA 220 nC @ 10 V ±30V 8800 pF @ 25 V - 780W (Tc) -55°C ~ 150°C (TJ) - - Through Hole T-MAX™ [B2]
MSC080SMA120S Microchip Technology

MSC080SMA120S

SICFET N-CH 1200V 35A D3PAK

Microchip Technology

24 -
Datasheet - TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 35A 20V 100mOhm @ 15A, 20V 2.8V @ 1mA 64 nC @ 20 V +23V, -10V 838 pF @ 1000 V - 182W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D3PAK
APT5014BLLG Microchip Technology

APT5014BLLG

MOSFET N-CH 500V 35A TO247

Microchip Technology

41 -
Datasheet POWER MOS 7® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 500 V 35A (Tc) 10V 140mOhm @ 17.5A, 10V 5V @ 1mA 72 nC @ 10 V ±30V 3261 pF @ 25 V - 403W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247 [B]
MSC035SMA070S Microchip Technology

MSC035SMA070S

MOSFET N-CH 700V D3PAK

Microchip Technology

68 -
Datasheet - TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel SiCFET (Silicon Carbide) 700 V 65A (Tc) 20V 44mOhm @ 30A, 20V 2.7V @ 1mA 99 nC @ 20 V +23V, -10V 2010 pF @ 700 V - 206W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D3PAK
APT106N60B2C6 Microchip Technology

APT106N60B2C6

MOSFET N-CH 600V 106A T-MAX

Microchip Technology

38 -
Datasheet CoolMOS™ TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 600 V 106A (Tc) 10V 35mOhm @ 53A, 10V 3.5V @ 3.4mA 308 nC @ 10 V ±20V 8390 pF @ 25 V - 833W (Tc) -55°C ~ 150°C (TJ) - - Through Hole T-MAX™ [B2]
APT5010LVRG Microchip Technology

APT5010LVRG

MOSFET N-CH 500V 47A TO264

Microchip Technology

19 -
Datasheet POWER MOS V® TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 500 V 47A (Tc) - 100mOhm @ 500mA, 10V 4V @ 2.5mA 470 nC @ 10 V - 8900 pF @ 25 V - - - - - Through Hole TO-264 [L]
APT29F100B2 Microchip Technology

APT29F100B2

MOSFET N-CH 1000V 30A T-MAX

Microchip Technology

11 -
Datasheet POWER MOS 8™ TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 1000 V 30A (Tc) 10V 440mOhm @ 16A, 10V 5V @ 2.5mA 260 nC @ 10 V ±30V 8500 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) - - Through Hole T-MAX™ [B2]
APT106N60LC6 Microchip Technology

APT106N60LC6

MOSFET N-CH 600V 106A TO264

Microchip Technology

38 -
Datasheet CoolMOS™ TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 600 V 106A (Tc) 10V 35mOhm @ 53A, 10V 3.5V @ 3.4mA 308 nC @ 10 V ±20V 8390 pF @ 25 V - 833W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-264 (L)
APT48M80L Microchip Technology

APT48M80L

MOSFET N-CH 800V 49A TO264

Microchip Technology

82 -
Datasheet - TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 800 V 49A (Tc) 10V 200mOhm @ 24A, 10V 5V @ 2.5mA 305 nC @ 10 V ±30V 9330 pF @ 25 V - 1135W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-264 [L]
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WINSUN SOURCING SUPPORT

Need Help Sourcing FETs, MOSFETs?

Send the target part number, manufacturer, specifications and quantity. Winsun (HK) Electronics can assist with availability checks, quotation support, shortage sourcing and alternative-part options when appropriate.

Availability and lead-time support BOM, shortage and alternative sourcing
FREQUENTLY ASKED QUESTIONS

FETs, MOSFETs FAQ

Common questions about filtering, comparing and sourcing FETs, MOSFETs components.

How can I narrow the FETs, MOSFETs selection?

Use the available manufacturer and technical parameter filters to reduce the product list. Compare the remaining part numbers against your electrical, package and application requirements.

Should I confirm the datasheet before selecting a part?

Yes. Always review the manufacturer datasheet to confirm ratings, package, operating conditions and other technical details before finalizing a component for your design.

Can Winsun (HK) Electronics help source a specific FETs, MOSFETs part number?

Yes. Send the exact manufacturer part number and required quantity for availability, lead-time and quotation support.

Do you support BOM, shortage or alternative-part requirements?

Yes. You can submit a BOM or shortage list for sourcing assistance. Where appropriate, our team can also help review possible alternative-part options.